Zetex (Now Diodes) BCW69, BCW69R, BCW70, BCW70R Schematic [ru]

SOT23 PNP PLANAR

SMALL SIGNAL TRANSISTORS

ISSUE 2 – FEBRUARY 1995

BCW69

BCW70

PARTMARKING DETAILS – BCW69	– H1
BCW70	– H2					E
				C
BCW69R	– H4
BCW70R	– H5
						B
ABSOLUTE MAXIMUM RATINGS.					SOT23
PARAMETER		SYMBOL		VALUE		UNIT
Collector-Base Voltage		VCBO	-50			V
Collector-Emitter Voltage		VCEO	-50			V
Collector-Emitter Voltage (IC=2mA)		VCEO	-45			V
Emitter-Base Voltage		VEBO	-5			V
Peak Pulse Current		ICM	-200			mA
Continuous Collector Current		IC	-100			A
Power Dissipation at Tamb=25°C		Ptot	330			mW
Operating and Storage Temperature Range		Tj:Tstg	-55 to +150			°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER		SYMBOL	MIN.	TYP.	MAX.	UNIT	CONDITIONS.
Collector-Base Cut-Off		ICBO			-100	nA	IE=0, VCB=-20V
Current					-10	μA	IE=0,
							VCB=-20V,Tj=100°C
Base-Emitter Voltage		VBE	-600		-750	mV	IC=-2.0mA, VCE=-5V
Collector-Emitter		VCE(sat)		-80	-300	mV	IC=-10mA, IB=-0.5mA
Saturation Voltage				-150		mV	IC=-50mA, IB=-2.5mA
Base-Emitter Saturation		VBE(sat)		-720		mV	IC=-10mA, IB=-0.5mA
Voltage				-810		mV	IC=-50mA, IB=-2.5mA
Static Forward	BCW69	hFE	120	90	260		IC =-10μA, VCE =-5V
Current Transfer							IC =-2mA, VCE =-5V
Ratio	BCW70
			215	150	500		IC =-10μA, VCE =-5V
							IC =-2mA, VCE =-5V
Transition Frequency		fT		150		MHz	IC =-10mA, VCE =-5V
							f =35MHz
Collector Capacitance		CTC			7	pF	IE =Ie =0, VCB =-10V
							f =1MHz
Noise Figure		N			10	dB	IC =-200μA, VCE =-5V
							RS =2KΩ, f =1KHz
							B =200Hz
*Measured under pulsed conditions. Pulse width=300μs. Duty cycle ≤2%
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