Zetex (Now Diodes) BSS84 Schematic [ru]
SOT23 P-CHANNEL ENHANCEMENT
BSS84
G
S
MODE VERTICAL DMOS FET
ISSUE 2 SEPTEMBER 1995 ✪
PARTMARKING DETAIL SP
D
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
Continuous Drain Current I
Pulsed Drain Current I
Gate-Source Voltage Peak V
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range t
ELECTRICAL CHARACTERISTICS (at T
amb
DS
D
DM
GS
TOT
j:tstg
= 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
Gate-Source
Threashold Voltage
Zero gate Voltage
Drain Current
BV
V
I
DSS
DSS
GS(th)
-50 V VGS=0V, ID=0.25mA
-0.8 -1.5 -2.0 V VDS=VGS , ID=-1mA
-1
-2
-15
-60
µA
µA
-100
Gate-Source Leakage
Current
Drain Source On-State
Resistance (1)
Forward
Transconductance (1)
I
GSS
R
DS(on)
g
fs
-1 -10 nA
610
Ω
0.05 0.07 S VDS=-25V
(2)
Input Capacitance (2) C
Output Capacitance C
Reverse Transfer
Capacitance (2)
Turn-On Time t
Turn-Off Time t
* (1) Measured under pulsed conditions. Pulse width = 300
(2) Sample test.
on
off
iss
oss
C
rss
td(on) 10
t
r
t
d(off)
t
f
40
15
6
10
18
25
3 - 69
pF
ns
µs. Duty cycle 2%
-50 V
-130 mA
-520 mA
±20
360 mW
-55 to +150 °C
Tj=25 °C
T
=125 °C
j
=-50V, VGS=0V(2)
V
DS
=25 °C
T
j
VDS=-25V, VGS=0V
= ±20V
V
GS
V
=0V
DS
VGS=-5V
I
=-100mA
D
=-100mA
I
D
VGS=0V
V
=-25V
DS
f=1MHz
VDD=-30V
=-0.27A
I
D
V
=-10V
GS
=50Ω
R
GS
V
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