TOSHIBA TLP862, TLP866, TLP867 Technical data

TLP862(F),TLP866(F),TLP867(F)

LED

TLP862(F),TLP866(F),TLP867(F)

○VTR

TLP862(F) TLP866(F) TLP867(F) GaAs LED Si

•
•	1	: TLP862(F)

•: TLP866(F)

			TLP867(F) ( )
•			: 5mm
•			: 0.5mm
•			: IC / IF=30%( ) at IF=1mA

• :

(Ta = 25°C)

IF

50

mA

( T a > 2 5 ° C )

∆IF / °C

−0.33

mA / °C

P862

1~12 A~L

VR

5

V

VCEO

30

V

VECO

5

V

PC

75

mW

( T a > 2 5 ° C )

∆PC / °C

−1

mW / °C

IC

40

mA

Topr

−25~85

°C

P862

TLP862(F)

P866

TLP866(F)

Tstg

−40~100

°C

P867

TLP867(F)

(

5

s )

Tsol

260

°C

1	2004-02-12

TLP862(F),TLP866(F),TLP867(F)

TLP862(F)

TLP866(F)

		11−20B2			11−14A1
			: 0.85g		( )
	TLP867(F)			0.65g	( )
				0.72g	( )

11−15B1

2	2004-02-12

TLP862(F),TLP866(F),TLP867(F)

VCC

―

5

16

V

IF

―

―

20

mA

Topr

−10

―

70

°C

(Ta = 25°C)

VF

IF=10mA

1.00

1.15

1.30

V

IR

VR=5V

―

―

10

µA

λP

IF=10mA

―

940

―

nm

ID (ICEO)

VCE=16V, IF=0

―

―

0.25

µA

λP

―

870

―

nm

IC / IF

VCE=2V, IF=1mA

30

―

1200

%

VCE(sat)

IF=2mA, IC=0.3mA

―

0.75

1

V

tr

VCC=5V, IC=1mA

―

600

―

µs

tf

RL =1kΩ

―

500

―

< >

	A			( ), ( ),
				(70% )
		,		, ,
	B			, ,MEK
				,m− ,
				, ,
				,
				,TCP,TBP
	C			, ,
		(	)	,
				( , ,
				,1,2− )
	D

•0.59N m (TLP862(F))

•LED LED 1: 1

IC (t)			=	PO (t)
I	C	(0)		P (0)
				O

3	2004-02-12

TLP862(F),TLP866(F),TLP867(F)

11−20B2

: mm

: 0.85g ( )

1	4
2	3

4	2004-02-12