STMicroelectronics STTH2002C Technical data
®
HIGH EFFICIENCY ULTRAFAST DIODE
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
Tj (max) 175 °C
(typ) 0.78 V
V
F
(typ) 22 ns
t
rr
Up to 2 x 15A
200 V
STTH2002C
A1
K
A2
FEATURES AND BENEFITS
Suited for SMPS
■
Low losses
■
Low forward and reverse recovery times
■
Low leakage current
■
High junction temperature
■
Insulated package: TO-220FPAB
■
TO-220AB
STTH2002CT
A1
A2
K
A1
I2PAK
STTH2002CR
K
DESCRIPTION
Dual center tap rectifier suited for Switch Mode
Power Supplies and High frequency DC to DC
converters.
Packaged in TO-220AB, D
2
PAK, this device is intended for use in low
and I
2
PAK, TO-220FPAB
A1
TO-220FPAB
STTH2002CFP
A2
K
STTH2002CG
K
A1
D2PAK
A2
voltage, high frequency inverters, free wheeling
and polarity protection applications.
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
stg
Tj
Repetitive peak reverse voltage
RMS forward current
Average forward
current δ =0.5
TO-220AB / I2PAK /
2
D
PAK
Tc = 150°C Per diode
Tc = 140°C Per device
Tc = 130°C Per diode
Tc = 115°C Per device
TO-220FPAB Tc = 120°C Per diode
Tc = 95°C Per device
Surge non repetitive forward current tp = 10 ms Sinusoidal
Storage temperature range
Maximum operating junction temperature
200 V
30 A
10 A
20
15
30
10
20
90 A
- 65 + 175 °C
175 °C
A2
K
February 2004 - Ed: 1
1/7
STTH2002C
THERMAL PARAMETERS
Symbol Parameter Maximum Unit
R
th (j-c)
Junction to case TO-220AB / I2PAK / D2PAK Per diode
Per device
TO-220FPAB Per diode
Per device
R
th (j-c)
Coupling TO-220AB / I2PAK / D2PAK
TO-220FPAB
When the diodes 1 and 2 are used simultaneously:
∆ Tj (diode1) = P(diode1) x R
(per diode) + P(diode2) x R
th(j-c)
th(c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Tests conditions Min. Typ. Max. Unit
2.5 °C/W
1.6
5
3.8
0.7 °C/W
2.5
*
I
R
Reverse leakage
current
**
V
F
Pulse test: * tp = 5ms, δ <2%
Forward voltage drop Tj = 25°C I
** tp = 380µs, δ <2%
Tj = 25°C VR=V
Tj = 125°C
=10A
F
Tj = 25°C I
Tj = 150°C I
Tj = 150°C I
=20A
F
=10A
F
=20A
F
RRM
6 100
0.78 0.89
10 µA
1.1 V
1.25
1.05
To evaluate the maximum conduction losses use the following equation :
P = 0.73 x I
F(AV)
+ 0.016 I
F2(RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Tests conditions Min. Typ. Max. Unit
t
rr
Reverse
recovery time
I
RM
Reverse
recovery current
Tj = 25°C IF=1A VR= 30V
dI
/dt = 100 A/µs
F
Tj = 125°C IF=10A VR= 160V
dI
/dt = 200 A/µs
F
22 27 ns
7.0 9.0 A
2/7
t
fr
V
FP
Forward
recovery time
Forward
Tj = 25°C IF=10A dIF/dt = 100 A/µs
V
= 1.1 x VFmax
FR
Tj = 25°C IF=10A dIF/dt = 100 A/µs
2.4 V
200 ns
recovery voltage
STTH2002C
Fig. 1: Peak current versus duty cycle (per diode).
I (A)
M
80
70
60
50
40
30
P = 5W
20
10
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
P = 20W
P = 10W
δ
I
M
δ
=tp/T
T
tp
Fig. 2-2: Forward voltage drop versus forward
current (maximum values, per diode).
I (A)
FM
100
90
80
70
60
50
40
30
20
10
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
T =150°C
j
V (V)
FM
T =25°C
j
Fig. 2-1: Forward voltage drop versus forward
current (typical values, per diode).
I (A)
FM
100
90
80
70
60
50
40
30
20
10
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
T =150°C
j
V (V)
FM
T =25°C
j
Fig. 3-1: Relative variation of thermal impedance
junction to case versus pulse duration (TO-220AB,
2
PAK, D2PAK).
I
Z/R
th(j-c) th(j-c)
1.0
Single pulse
t(s)
0.1
1.E-03 1.E-02 1.E-01 1.E+00
p
Fig. 3-2: Relative variation of thermal impedance
junction to case versus pulse duration
(TO-220FPAB).
Z/R
th(j-c) th(j-c)
1.0
Single pulse
0.1
t(s)
0.0
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
p
Fig. 4: Junction capacitance versus reverse
voltage applied (typical values, per diode).
C(pF)
100
V (V)
10
0 50 100 150 200
R
F=1MHz
V =30mV
OSC RMS
T =25°C
j
3/7
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