®
HIGH EFFICIENCY ULTRAFAST DIODE
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
Tj (max) 175 °C
(typ) 0.78 V
V
F
(typ) 22 ns
t
rr
Up to 2 x 15A
200 V
STTH2002C
A1
K
A2
FEATURES AND BENEFITS
Suited for SMPS
■
Low losses
■
Low forward and reverse recovery times
■
Low leakage current
■
High junction temperature
■
Insulated package: TO-220FPAB
■
TO-220AB
STTH2002CT
A1
A2
K
A1
I2PAK
STTH2002CR
K
DESCRIPTION
Dual center tap rectifier suited for Switch Mode
Power Supplies and High frequency DC to DC
converters.
Packaged in TO-220AB, D
2
PAK, this device is intended for use in low
and I
2
PAK, TO-220FPAB
A1
TO-220FPAB
STTH2002CFP
A2
K
STTH2002CG
K
A1
D2PAK
A2
voltage, high frequency inverters, free wheeling
and polarity protection applications.
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
stg
Tj
Repetitive peak reverse voltage
RMS forward current
Average forward
current δ =0.5
TO-220AB / I2PAK /
2
D
PAK
Tc = 150°C Per diode
Tc = 140°C Per device
Tc = 130°C Per diode
Tc = 115°C Per device
TO-220FPAB Tc = 120°C Per diode
Tc = 95°C Per device
Surge non repetitive forward current tp = 10 ms Sinusoidal
Storage temperature range
Maximum operating junction temperature
200 V
30 A
10 A
20
15
30
10
20
90 A
- 65 + 175 °C
175 °C
A2
K
February 2004 - Ed: 1
1/7
STTH2002C
THERMAL PARAMETERS
Symbol Parameter Maximum Unit
R
th (j-c)
Junction to case TO-220AB / I2PAK / D2PAK Per diode
Per device
TO-220FPAB Per diode
Per device
R
th (j-c)
Coupling TO-220AB / I2PAK / D2PAK
TO-220FPAB
When the diodes 1 and 2 are used simultaneously:
∆ Tj (diode1) = P(diode1) x R
(per diode) + P(diode2) x R
th(j-c)
th(c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Tests conditions Min. Typ. Max. Unit
2.5 °C/W
1.6
5
3.8
0.7 °C/W
2.5
*
I
R
Reverse leakage
current
**
V
F
Pulse test: * tp = 5ms, δ <2%
Forward voltage drop Tj = 25°C I
** tp = 380µs, δ <2%
Tj = 25°C VR=V
Tj = 125°C
=10A
F
Tj = 25°C I
Tj = 150°C I
Tj = 150°C I
=20A
F
=10A
F
=20A
F
RRM
6 100
0.78 0.89
10 µA
1.1 V
1.25
1.05
To evaluate the maximum conduction losses use the following equation :
P = 0.73 x I
F(AV)
+ 0.016 I
F2(RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Tests conditions Min. Typ. Max. Unit
t
rr
Reverse
recovery time
I
RM
Reverse
recovery current
Tj = 25°C IF=1A VR= 30V
dI
/dt = 100 A/µs
F
Tj = 125°C IF=10A VR= 160V
dI
/dt = 200 A/µs
F
22 27 ns
7.0 9.0 A
2/7
t
fr
V
FP
Forward
recovery time
Forward
Tj = 25°C IF=10A dIF/dt = 100 A/µs
V
= 1.1 x VFmax
FR
Tj = 25°C IF=10A dIF/dt = 100 A/µs
2.4 V
200 ns
recovery voltage
STTH2002C
Fig. 1: Peak current versus duty cycle (per diode).
I (A)
M
80
70
60
50
40
30
P = 5W
20
10
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
P = 20W
P = 10W
δ
I
M
δ
=tp/T
T
tp
Fig. 2-2: Forward voltage drop versus forward
current (maximum values, per diode).
I (A)
FM
100
90
80
70
60
50
40
30
20
10
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
T =150°C
j
V (V)
FM
T =25°C
j
Fig. 2-1: Forward voltage drop versus forward
current (typical values, per diode).
I (A)
FM
100
90
80
70
60
50
40
30
20
10
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
T =150°C
j
V (V)
FM
T =25°C
j
Fig. 3-1: Relative variation of thermal impedance
junction to case versus pulse duration (TO-220AB,
2
PAK, D2PAK).
I
Z/R
th(j-c) th(j-c)
1.0
Single pulse
t(s)
0.1
1.E-03 1.E-02 1.E-01 1.E+00
p
Fig. 3-2: Relative variation of thermal impedance
junction to case versus pulse duration
(TO-220FPAB).
Z/R
th(j-c) th(j-c)
1.0
Single pulse
0.1
t(s)
0.0
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
p
Fig. 4: Junction capacitance versus reverse
voltage applied (typical values, per diode).
C(pF)
100
V (V)
10
0 50 100 150 200
R
F=1MHz
V =30mV
OSC RMS
T =25°C
j
3/7
STTH2002C
Fig. 5: Reverse recovery charges versus dIF/dt
(typical values, per diode).
Q (nC)
rr
300
I =10A
F
V =160V
R
250
T =125°C
200
150
100
50
0
10 100 1000
j
dI /dt(A/µs)
F
T =25°C
j
Fig. 7: Peak reverse recovery current versus dIF/dt
(typical values, per diode).
I(A)
RM
16
I =10A
F
V =160V
R
14
12
10
8
6
4
2
0
10 100 1000
T =125°C
j
dI /dt(A/µs)
F
T =25°C
j
Fig. 6: Reverse recovery time versus dIF/dt
(typical values, per diode).
t(ns)
rr
80
I =10A
F
V =160V
R
70
60
50
40
30
20
10
0
10 100 1000
T =125°C
j
dI /dt(A/µs)
F
T =25°C
j
Fig. 8: Dynamic parameters versus junction
temperature.
Q;rrI [T ]/Q ;I [T =125°C]
RM j rr RM j
1.4
I =10A
F
V =160V
R
1.2
1.0
I
0.8
0.6
0.4
0.2
0.0
25 50 75 100 125 150
RM
Q
rr
T (°C)
j
Fig. 9: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, e
R (°C/W)
th(j-a)
80
70
60
50
40
30
20
10
0
02468101214161820
4/7
: 35µm) for D2PAK.
CU
S(Cu)(cm²)
STTH2002C
Ordering code Marking Package Weight Base qty Delivery mode
STTH2002CT STTH2002CT TO-220AB 2.23 g 50 Tube
STTH2002CG STTH2002CG D
STTH2002CG-TR STTH2002CG D
STTH2002CR STTH2002CR I
STTH2002CFP STTH2002CFP TO-220FPAB 1.70g 50 Tube
PACKAGE MECHANICAL DATA
2
PAK
D
A
L2
E
L
L3
B2
B
G
* FLAT ZONE NO LESS THAN 2mm
A1
C2
C
A2
M
*
2
PAK 1.48 g 50 Tube
2
PAK 1.48 g 1000 Tape & reel
2
PAK 1.49 g 50 Tube
DIMENSIONS
REF.
Millimeters Inches
Min. Max. Min. Max.
A 4.40 4.60 0.173 0.181
A1 2.49 2.69 0.098 0.106
D
A2 0.03 0.23 0.001 0.009
B 0.70 0.93 0.027 0.037
B2 1.14 1.70 0.045 0.067
C 0.45 0.60 0.017 0.024
R
C2 1.23 1.36 0.048 0.054
D 8.95 9.35 0.352 0.368
E 10.00 10.40 0.393 0.409
G 4.88 5.28 0.192 0.208
L 15.00 15.85 0.590 0.624
L2 1.27 1.40 0.050 0.055
V2
L3 1.40 1.75 0.055 0.069
M 2.40 3.20 0.094 0.126
R 0.40 typ. 0.016 typ.
V2 0° 8° 0° 8°
FOOTPRINT DIMENSIONS (in millimeters)
16.90
10.30
1.30
3.70
8.90
5.08
5/7
STTH2002C
PACKAGE MECHANICAL DATA
2
PAK
I
E
L2
L1
b2
L
b1
b
e
c2
D
A1
DIMENSIONS
REF.
Millimeters Inches
Min. Max. Min. Max.
A
A 4.40 4.60 0.173 0.181
A1 2.49 2.69 0.098 0.106
b 0.70 0.93 0.028 0.037
b1 1.14 1.17 0.044 0.046
b2 1.14 1.17 0.044 0.046
c 0.45 0.60 0.018 0.024
c2 1.23 1.36 0.048 0.054
D 8.95 9.35 0.352 0.368
e 2.40 2.70 0.094 0.106
E 10.0 10.4 0.394 0.409
L 13.1 13.6 0.516 0.535
L1 3.48 3.78 0.137 0.149
L2 1.27 1.40 0.050 0.055
c
PACKAGE MECHANICAL DATA
TO-220FPAB
H
Dia
L6
L2
L3
L5
D
L4
G1
G
F1
F2
F
DIMENSIONS
REF.
A
B
A 4.4 4.6 0.173 0.181
Millimeters Inches
Min. Max. Min. Max.
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.70 0.018 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.70 0.045 0.067
L7
F2 1.15 1.70 0.045 0.067
G 4.95 5.20 0.195 0.205
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 Typ. 0.63 Typ.
L3 28.6 30.6 1.126 1.205
L4 9.8 10.6 0.386 0.417
E
L5 2.9 3.6 0.114 0.142
L6 15.9 16.4 0.626 0.646
L7 9.00 9.30 0.354 0.366
Dia. 3.00 3.20 0.118 0.126
6/7
PACKAGE MECHANICAL DATA
TO-220AB
H2
Dia
L5
L6
L2
F2
F1
F
G1
G
L9
L4
STTH2002C
DIMENSIONS
REF.
A 4.40 4.60 0.173 0.181
A
C
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027
L7
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.066
F2 1.14 1.70 0.044 0.066
G 4.95 5.15 0.194 0.202
D
G1 2.40 2.70 0.094 0.106
H2 10 10.40 0.393 0.409
L2 16.4 typ. 0.645 typ.
M
E
L4 13 14 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.259
L9 3.50 3.93 0.137 0.154
M 2.6 typ. 0.102 typ.
Diam. 3.75 3.85 0.147 0.151
Millimeters Inches
Min. Max. Min. Max.
■
Epoxy meets UL94,V0
■
Cooling method: by conduction (method C)
■
Recommended torque value (TO-220AB): 0.8 N.m.
■
Maximum torque value (TO-220AB): 1.0 N.m.
■
Recommended torque value (TO-220FPAB): 0.55 N.m.
■
Maximum torque value (TO-220FPAB): 0.7 N.m.
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from itsuse. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not au
thorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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All other names are the property of their respective owners.
© 2004 STMicroelectronics - All rights reserved.
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