Main product characteristics
STTH602C
Ultrafast recovery diode
I
F(AV)
V
RRM
T
(max) 175° C
j
V
(typ) 0.80 V
F
(typ) 14 ns
t
rr
2 x 3 A
200 V
Features and benefits
■ Suited for SMPS
■ Low losses
■ Low forward and reverse recovery time
■ High surge current capability
■ High junction temperature
■ insulated package: TO-220FPAB
Description
Dual center tap diode suited for switch mode
power supplies and high frequency DC to DC
converters.
A1
TO-220AB
STTH602CT
A1
A2
A2
K
K
A2
K
A1
TO-220FPAB
STTH602CFP
Packaged in TO-220AB and TO-22FPAB, this
device is intended for use in low voltage high
frequency inverters, free wheeling and polarity
protection.
April 2006 Rev 1 1/9
Order codes
Part Number Marking
STTH602CT STTH602C
STTH602CFP STTH602C
www.st.com
Characteristics STTH602C
1 Characteristics
Table 1. Absolute ratings (limiting values at T
= 25° C, unless otherwise specified)
j
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
Repetitive peak reverse voltage 200 V
RMS forward current 22 A
Per diode Tc = 160° C 3
TO-220AB
I
F(AV)
Average forward current, δ = 0.5
Per device T
Per diode T
TO-220FPAB
= 155° C 6
c
= 150° C 3
c
Per device Tc = 140° C 6
I
FSM
T
Table 2. Thermal parameters
Surge non repetitive forward current tp = 10 ms Sinusoidal 60 A
Storage temperature range -65 to + 175 ° C
stg
T
Maximum operating junction temperature 175 ° C
j
Symbol Parameter Value Unit
Per di ode 5
TO-220AB
Per device 3.0
R
th(j-c)
Junction to case
Per di ode 7.5
° C/W
TO-220FPAB
Per device 5.25
TO-220AB Per diode 1
R
th(c)
Coupling
TO-220FPAB Per diode 3
A
A
When the two diodes 1 and 2 are used simultaneously:
∆Tj(diode 1) = P (diode 1) X R
Table 3. Static electrical characteristics
Symbol Parameter Test conditions Typ Max. Unit
(1)
I
R
(2)
V
F
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: t
Reverse leakage current
Forward voltage drop
= 380 µs, δ < 2 %
p
(Per diode) + P (diode 2) x R
th(j-c)
T
= 25° C
j
= 125° C 3 30
T
j
= V
V
R
RRM
th(c)
Tj = 25° C
= 3 A
I
T
= 150° C 0.8 0.95
j
F
Tj = 25° C
= 6 A
I
T
= 150° C 0.9 1.05
j
F
3
0.98 1.1
1.1 1.25
To evaluate the conduction losses use the following equation:
P = 0.85 x I
2/9
F(AV)
+ 0.033 I
F2(RMS)
µA
V
STTH602C Characteristics
Table 4. Dynamic characteristics
Symbol Parameter
IF = 1 A, dIF/dt = -100 A/µs,
V
t
Reverse recovery time
rr
Reverse recovery current
I
RM
Forward recovery time
t
fr
V
Forward recovery voltage
FP
R
= 1 A, dIF/dt = -50 A/µs,
I
F
V
R
= 3 A, dIF/dt = 200 A/µs,
I
F
V
R
IF = 3 A, dIF/dt = 200 A/µs
V
FR
IF = 3 A, dIF/dt = 200 A/µs,
Tj = 25 °C
Figure 1. Peak current versus duty cycle
(per diode)
IM(A)
100
80
60
δ
P = 10 WP = 10 W
P = 5 WP = 5 W
P = 3 WP = 3 W
40
20
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
T
T
I
I
M
M
tp
tp
=tp/T
=tp/T
d
δ
Test conditions
= 30 V, Tj = 25 °C
= 30 V, Tj = 25 °C
= 160 V, Tj = 125 °C
= 1.1 x V
, Tj = 25 °C
Fmax
Figure 2. Forward voltage drop versus
IFM(A)
100
80
60
40
20
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Min. Typ Max. Unit
14 20 ns
21 30
45.5 A
24 ns
3.7 V
forward current (typical values per
diode)
Tj=150°C
Tj=25°C
VFM(V)
Figure 3. Forward voltage drop versus
forward current (maximum values
per diode)
IFM(A)
100
90
80
70
60
50
40
30
20
10
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Tj=150°C
Tj=25°C
VFM(V)
Figure 4. Relative variation of thermal
impedance junction to case versus
pulse duration (T0-220AB)
Z
th(j-c)/Rth(j-c)
1.0
Single pulse
TO-220AB
0.1
1.E-03 1.E-02 1.E-01 1.E+00
3/9
tp(s)
Characteristics STTH602C
Figure 5. Relative variation of thermal
impedance junction to case versus
pulse duration (TO-220FPAB)
Z
th(j-c)/Rth(j-c)
1.0
Single pulse
TO-220FPAB
0.1
0.0
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
tp(s)
Figure 7. Reverse recovery charges versus
dI
/dt (typical values)
F
QRR(nC)
100
IF=3A
=160V
V
R
80
60
40
20
0
0 50 100 150 200 250 300 350 400 450 500
Tj=125°C
Tj=25°C
dIF/dt(A/µs)
Figure 6. Junction capacitance versus
reverse applied voltage (typical
values per diode)
C(pF)
100
10
1
1 10 100 1000
VR(V)
V
F=1MHz
=30mV
osc
Tj=25°C
RMS
Figure 8. Reverse recovery time versus dI
(typical values)
tRR(ns)
80
70
60
50
40
30
20
10
0
10 100 1000
dIF/dt(A/µs)
Tj=125°C
Tj=25°C
IF=3A
V
=160V
R
F
/dt
Figure 9. Peak reverse recovery current
versus dI
IRM(A)
10
IF=3A
=160V
V
R
8
6
4
2
0
0 50 100 150 200 250 300 350 400 450 500
/dt (typical values)
F
Tj=125°C
Tj=25°C
dIF/dt(A/µs)
Figure 10. Dynamic parameters versus
junction temperature
QRR;IRM[Tj]/QRR;IRM[Tj=125°C]
1.4
IF=3A
V
=160V
R
1.2
1.0
I
0.8
0.6
0.4
0.2
0.0
25 50 75 100 125 150
RM
Q
RR
Tj(°C)
4/9
STTH602C Ordering information scheme
2 Ordering information scheme
STTH 6 02 Cxx
Ultrafast switching diode
Average forward current
6 = 6 A
Repetitive peak reverse voltage
02 = 200 V
Package
CT = TO-220AB
CFP = TO-220FPAB
5/9
Package information STTH602C
3 Package information
Epoxy meets UL94, V0
Cooling method: by conduction (C)
Recommended torque value: 0.8 Nm
Maximum torque value: 1.0 Nm
Table 5. TO-220AB Dimensions
DIMENSIONS
REF.
Millimeters Inches
Min. Typ Max. Min. Typ Max.
A 15.20 15.90 0.598 0.625
a1 3.75 0.147
B
Ø I
L
A
I4
l3
a1
l2
a2
C
b2
a2 13.00 14.00 0.511 0.551
B 10.00 10.40 0.393 0.409
F
b1 0.61 0.88 0.024 0.034
b2 1.23 1.32 0.048 0.051
C 4.40 4.60 0.173 0.181
c2
c1 0.49 0.70 0.019 0.027
c2 2.40 2.72 0.094 0.107
e 2.40 2.70 0.094 0.106
b1
e
M
F 6.20 6.60 0.244 0.259
c1
ØI 3.75 3.85 0.147 0.151
I4 15.80 16.40 16.80 0.622 0.646 0.661
L 2.65 2.95 0.104 0.116
l2 1.14 1.70 0.044 0.066
l3 1.14 1.70 0.044 0.066
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M 2.60 0.102
STTH602C Package information
Table 6. TO-220FPAB Dimensions
DIMENSIONS
REF.
Millimeters Inches
Min. Max. Min. Max.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
A
H
B
D 2.5 2.75 0.098 0.108
E 0.45 0.70 0.018 0.027
Dia
L6
L2
L3
L5
D
F1
L4
F2
F
G1
G
L7
E
F 0.75 1 0.030 0.039
F1 1.15 1.70 0.045 0.067
F2 1.15 1.70 0.045 0.067
G 4.95 5.20 0.195 0.205
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 Typ. 0.63 Typ.
L3 28.6 30.6 1.126 1.205
L4 9.8 10.6 0.386 0.417
L5 2.9 3.6 0.114 0.142
L6 15.9 16.4 0.626 0.646
L7 9.00 9.30 0.354 0.366
Dia. 3.00 3.20 0.118 0.126
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com.
7/9
Ordering information STTH602C
4 Ordering information
Part Number Marking Package Weight Base qty Delivery mode
STTH602CT STTH602C TO-220AB 2.23 g 50 Tube
STTH602CFP STTH602C TO-220FPAB 2 g 50 Tube
5 Revision history
Date Revision Description of Changes
05-Apr-2006 1 First issue
8/9
STTH602C
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