![](/html/3d/3d04/3d04524167f3a74358e74587df8f05fb5c1ce8d02cccad95fc54d6a1f40f49f6/bg1.png)
Main product characteristics
STTH602C
Ultrafast recovery diode
I
F(AV)
V
RRM
T
(max) 175° C
j
V
(typ) 0.80 V
F
(typ) 14 ns
t
rr
2 x 3 A
200 V
Features and benefits
■ Suited for SMPS
■ Low losses
■ Low forward and reverse recovery time
■ High surge current capability
■ High junction temperature
■ insulated package: TO-220FPAB
Description
Dual center tap diode suited for switch mode
power supplies and high frequency DC to DC
converters.
A1
TO-220AB
STTH602CT
A1
A2
A2
K
K
A2
K
A1
TO-220FPAB
STTH602CFP
Packaged in TO-220AB and TO-22FPAB, this
device is intended for use in low voltage high
frequency inverters, free wheeling and polarity
protection.
April 2006 Rev 1 1/9
Order codes
Part Number Marking
STTH602CT STTH602C
STTH602CFP STTH602C
www.st.com
![](/html/3d/3d04/3d04524167f3a74358e74587df8f05fb5c1ce8d02cccad95fc54d6a1f40f49f6/bg2.png)
Characteristics STTH602C
1 Characteristics
Table 1. Absolute ratings (limiting values at T
= 25° C, unless otherwise specified)
j
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
Repetitive peak reverse voltage 200 V
RMS forward current 22 A
Per diode Tc = 160° C 3
TO-220AB
I
F(AV)
Average forward current, δ = 0.5
Per device T
Per diode T
TO-220FPAB
= 155° C 6
c
= 150° C 3
c
Per device Tc = 140° C 6
I
FSM
T
Table 2. Thermal parameters
Surge non repetitive forward current tp = 10 ms Sinusoidal 60 A
Storage temperature range -65 to + 175 ° C
stg
T
Maximum operating junction temperature 175 ° C
j
Symbol Parameter Value Unit
Per di ode 5
TO-220AB
Per device 3.0
R
th(j-c)
Junction to case
Per di ode 7.5
° C/W
TO-220FPAB
Per device 5.25
TO-220AB Per diode 1
R
th(c)
Coupling
TO-220FPAB Per diode 3
A
A
When the two diodes 1 and 2 are used simultaneously:
∆Tj(diode 1) = P (diode 1) X R
Table 3. Static electrical characteristics
Symbol Parameter Test conditions Typ Max. Unit
(1)
I
R
(2)
V
F
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: t
Reverse leakage current
Forward voltage drop
= 380 µs, δ < 2 %
p
(Per diode) + P (diode 2) x R
th(j-c)
T
= 25° C
j
= 125° C 3 30
T
j
= V
V
R
RRM
th(c)
Tj = 25° C
= 3 A
I
T
= 150° C 0.8 0.95
j
F
Tj = 25° C
= 6 A
I
T
= 150° C 0.9 1.05
j
F
3
0.98 1.1
1.1 1.25
To evaluate the conduction losses use the following equation:
P = 0.85 x I
2/9
F(AV)
+ 0.033 I
F2(RMS)
µA
V
![](/html/3d/3d04/3d04524167f3a74358e74587df8f05fb5c1ce8d02cccad95fc54d6a1f40f49f6/bg3.png)
STTH602C Characteristics
Table 4. Dynamic characteristics
Symbol Parameter
IF = 1 A, dIF/dt = -100 A/µs,
V
t
Reverse recovery time
rr
Reverse recovery current
I
RM
Forward recovery time
t
fr
V
Forward recovery voltage
FP
R
= 1 A, dIF/dt = -50 A/µs,
I
F
V
R
= 3 A, dIF/dt = 200 A/µs,
I
F
V
R
IF = 3 A, dIF/dt = 200 A/µs
V
FR
IF = 3 A, dIF/dt = 200 A/µs,
Tj = 25 °C
Figure 1. Peak current versus duty cycle
(per diode)
IM(A)
100
80
60
δ
P = 10 WP = 10 W
P = 5 WP = 5 W
P = 3 WP = 3 W
40
20
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
T
T
I
I
M
M
tp
tp
=tp/T
=tp/T
d
δ
Test conditions
= 30 V, Tj = 25 °C
= 30 V, Tj = 25 °C
= 160 V, Tj = 125 °C
= 1.1 x V
, Tj = 25 °C
Fmax
Figure 2. Forward voltage drop versus
IFM(A)
100
80
60
40
20
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Min. Typ Max. Unit
14 20 ns
21 30
45.5 A
24 ns
3.7 V
forward current (typical values per
diode)
Tj=150°C
Tj=25°C
VFM(V)
Figure 3. Forward voltage drop versus
forward current (maximum values
per diode)
IFM(A)
100
90
80
70
60
50
40
30
20
10
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Tj=150°C
Tj=25°C
VFM(V)
Figure 4. Relative variation of thermal
impedance junction to case versus
pulse duration (T0-220AB)
Z
th(j-c)/Rth(j-c)
1.0
Single pulse
TO-220AB
0.1
1.E-03 1.E-02 1.E-01 1.E+00
3/9
tp(s)