ST STTH602C User Manual

Main product characteristics

STTH602C

Ultrafast recovery diode

I

F(AV)

V

RRM

T

(max) 175° C

j

V

(typ) 0.80 V

F

(typ) 14 ns

t

rr

2 x 3 A

200 V

Features and benefits

■ Suited for SMPS

■ Low losses

■ Low forward and reverse recovery time

■ High surge current capability

■ High junction temperature

■ insulated package: TO-220FPAB

Description

Dual center tap diode suited for switch mode power supplies and high frequency DC to DC converters.

A1

TO-220AB

STTH602CT

A1

A2

K

A2

K

A1

TO-220FPAB

STTH602CFP

Packaged in TO-220AB and TO-22FPAB, this device is intended for use in low voltage high frequency inverters, free wheeling and polarity protection.

April 2006 Rev 1 1/9

Order codes

Part Number Marking

STTH602CT STTH602C

STTH602CFP STTH602C

www.st.com

Characteristics STTH602C

1 Characteristics

Table 1. Absolute ratings (limiting values at T

= 25° C, unless otherwise specified)

j

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

Repetitive peak reverse voltage 200 V

RMS forward current 22 A

Per diode Tc = 160° C 3

TO-220AB

I

F(AV)

Average forward current, δ = 0.5

Per device T

Per diode T

TO-220FPAB

= 155° C 6

c

= 150° C 3

c

Per device Tc = 140° C 6

I

FSM

T

Table 2. Thermal parameters

Surge non repetitive forward current tp = 10 ms Sinusoidal 60 A

Storage temperature range -65 to + 175 ° C

stg

T

Maximum operating junction temperature 175 ° C

j

Symbol Parameter Value Unit

Per di ode 5

TO-220AB

Per device 3.0

R

th(j-c)

Junction to case

Per di ode 7.5

° C/W

TO-220FPAB

Per device 5.25

TO-220AB Per diode 1

R

th(c)

Coupling

TO-220FPAB Per diode 3

A

When the two diodes 1 and 2 are used simultaneously:

∆Tj(diode 1) = P (diode 1) X R

Table 3. Static electrical characteristics

Symbol Parameter Test conditions Typ Max. Unit

(1)

I

R

(2)

V

F

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: t

Reverse leakage current

Forward voltage drop

= 380 µs, δ < 2 %

p

(Per diode) + P (diode 2) x R

th(j-c)

T

= 25° C

j

= 125° C 3 30

T

j

= V

V

R

RRM

th(c)

Tj = 25° C

= 3 A

I

T

= 150° C 0.8 0.95

j

F

Tj = 25° C

= 6 A

I

T

= 150° C 0.9 1.05

j

F

3

0.98 1.1

1.1 1.25

To evaluate the conduction losses use the following equation: P = 0.85 x I

2/9

F(AV)

+ 0.033 I

F2(RMS)

µA

V

STTH602C Characteristics

Table 4. Dynamic characteristics

Symbol Parameter

IF = 1 A, dIF/dt = -100 A/µs, V

t

Reverse recovery time

rr

Reverse recovery current

I

RM

Forward recovery time

t

fr

V

Forward recovery voltage

FP

R

= 1 A, dIF/dt = -50 A/µs,

I

F

V

R

= 3 A, dIF/dt = 200 A/µs,

I

F

V

R

IF = 3 A, dIF/dt = 200 A/µs V

FR

IF = 3 A, dIF/dt = 200 A/µs, Tj = 25 °C

Figure 1. Peak current versus duty cycle

(per diode)

IM(A)

100

80

60

δ

P = 10 WP = 10 W

P = 5 WP = 5 W

P = 3 WP = 3 W

40

20

0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

T

I

M

tp

=tp/T

d

δ

Test conditions

= 30 V, Tj = 25 °C

= 160 V, Tj = 125 °C

= 1.1 x V

, Tj = 25 °C

Fmax

Figure 2. Forward voltage drop versus

IFM(A)

100

80

60

40

20

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Min. Typ Max. Unit

14 20 ns

21 30

45.5 A

24 ns

3.7 V

forward current (typical values per diode)

Tj=150°C

Tj=25°C

VFM(V)

Figure 3. Forward voltage drop versus

forward current (maximum values per diode)

IFM(A)

100

90

80

70

60

50

40

30

20

10

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Tj=150°C

Tj=25°C

VFM(V)

Figure 4. Relative variation of thermal

impedance junction to case versus pulse duration (T0-220AB)

Z

th(j-c)/Rth(j-c)

1.0

Single pulse

TO-220AB

0.1

1.E-03 1.E-02 1.E-01 1.E+00

3/9

tp(s)