ST STTH2002 User Manual

Features

STTH2002

Ultrafast recovery diode

■ Ultrafast switching

■ Low reverse current

■ Low thermal resistance

■ Reduces switching and conduction losses

■ High T

■

■ Capacitance: 7 pF

j

Insulating voltage: 2500 V rms

Description

This single rectifier is suited for switch mode power supply and high frequency DC to DC converters. Packaged in D insulated TO-220AC, this device is intended for low voltage, high frequency inverters, free wheeling and polarity protection applications

2

PAK, TO-220AC and

K

STTH2002D

A

K

TO-220AC

A

K

NC

STTH2002G

K

A

K

TO-220ACins

STTH2002DI

A

D2PA K

Table 1. Device summary

Symbol Value

I

F(AV)

V

RRM

(max) 175 °C

T

j

(typ) 0.86 V

V

F

t

(typ) 16 ns

rr

September 2011 Doc ID 12365 Rev 2 1/10

20 A

200 V

www.st.com

10

Characteristics STTH2002

1 Characteristics

Table 2. Absolute ratings (limiting values at T

= 25 °C, unless otherwise specified)

j

Symbol Parameter Value Unit

V

I

F(RMS)

I

F(AV)

I

T

Table 3. Thermal parameters

Repetitive peak reverse voltage 200 V

RRM

Forward rms current 35 A

T

Average forward current, δ = 0.5

TO-220AC, D2PA K

TO-220ACins

Surge non repetitive forward current tp = 10 ms sinusoidal 175 A

FSM

Storage temperature range -65 to + 175 °C

stg

Maximum operating junction temperature 175 °C

T

j

= 120 °C

c

= 60 °C

T

c

20 A

Symbol Parameter Value Unit

TO-220AC, D2PA K 2 . 4

R

Table 4. Static electrical characteristics

th(j-c)

Junction to case

TO-220ACins 5

°C/W

Symbol Parameter Test conditions Min. Typ. Max. Unit

(1)

I

V

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: t

Reverse leakage current

R

(2)

Forward voltage drop

F

= 380 µs, δ < 2 %

p

Tj = 25 °C

VR = V

= 20 A

I

F

= 25 A

I

F

RRM

11.1

= 125 °C 10 100

T

j

Tj = 25 °C

T

= 150 °C 0.86 0.95

j

= 25 °C

T

j

Tj = 125 °C 0.94 1.05

T

= 150 °C 0.9 1

j

10

1.15

µA

V

To evaluate the conduction losses use the following equation: P = 0.75 x I

2/10 Doc ID 12365 Rev 2

F(AV)

+ 0.01 I

F2(RMS)

STTH2002 Characteristics

Table 5. Dynamic characteristics

Symbol Parameter

t

rr

I

RM

t

fr

V

FP

Reverse recovery time

Reverse recovery current

Forward recovery time

Forward recovery voltage

Test conditions

I

= 1 A, dIF/dt = -200 A/µs,

F

= 30 V, Tj = 25 °C

V

R

= 1 A, dIF/dt = -50 A/µs,

I

F

= 30 V, Tj = 25 °C

V

R

I

= 20 A, dIF/dt = 100 A/µs,

F

VR = 160 V, Tj = 125 °C

= 20 A, dIF/dt = 100 A/µs

I

F

= 1.1 x V

V

FR

= 20 A, dIF/dt = 100 A/µs,

I

F

= 1.1 x V

V

FR

, Tj = 25 °C

Fmax

, Tj = 25 °C

Fmax

Min. Typ. Max. Unit

16 20

33 40

810A

230 ns

2V

Figure 1. Peak current versus duty cycle Figure 2. Forward voltage drop versus

forward current (typical values)

IM(A)

100

80

60

40

20

0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

P = 10 WP = 10 W

P = 5 WP = 5 W

P = 3 WP = 3 W

δ

T

I

M

=tp/T

d

δ

tp

IFM(A)

200

180

160

140

120

100

80

60

40

20

0

0.0 0.5 1.0 1.5 2.0 2.5

Tj=150°C

Tj=25°C

VFM(V)

ns

Figure 3. Forward voltage drop versus

forward current (maximum values)

IFM(A)

200

180

160

140

120

100

80

60

40

20

0

0.0 0.5 1.0 1.5 2.0 2.5

Tj=150°C

Tj=25°C

VFM(V)

Figure 4. Relative variation of thermal

impedance, junction to case, versus pulse duration

Z

th(j-c)/Rth(j-c)

1.0

Single pulse

TO-220AC

TO-220ACins

D²PAK

0.1

1.E-03 1.E-02 1.E-01 1.E+00

Doc ID 12365 Rev 2 3/10

tp(s)