OMNIREL OMH315, OMH310 Datasheet
OMH310
OMH315
DU AL, LOW V OLTAGE, LOW R
DS(on)
, MOSFET
H-BRIDGE CIRCUIT IN A PLASTIC PACKAGE
Dual 50 Volt, 15 And 20 Amp H-Bridge
With Current And Temperature Sensing
In A Low Profile Plastic Package
FEATURES
• H-Bridge Configuration
• Zener Gate Protection
• 10 m Shunt Resistor
• 2 Linear Thermal Sensors, One For Each Bridge
• Isolated Package
• Output Currents Up To 20 Amps
DESCRIPTION
This series of MOSFET switches is configured as a Dual H-Bridge with common V
lines, precision series shunt resistor in the source line, and sensing elements to
monitor the substrate temperature of each switch. This device is ideally suited for
Stepping Motor Control applications where size, performance, and efficiency are key.
DD
2.1
DS
DM
DS
DGR
(1)
(TC= @ 25°C)
R
DS(on)
I
D
(TC= @ 25°C unless otherwise noted)
50 50 V
50 50 V
56 100 A
(2)
(2)
20 50 W
1 1 18 W
Package
MAXIMUM RATINGS
Part V
Number (Volts) (m ) (Amps)
OMH310 50 100 15 MP-3
OMH315 50 70 20 MP-3
ABSOLUTE MAXIMUM RATINGS
Parameter OMH310 OMH315 Units
Drain Source Voltage, V
Drain-Gate (RGS= 1m ), V
Continuous Drain Current, ID@ TC= 25°C 15 25 A
Continuous Drain Current, ID@ TC= 70°C 11 16 A
Pulse Drain Current, I
Maximum Power Dissipation, PD@ TC= 25°C
Maximum Power Dissipation, PD@ TC= 70°C
Linear Derating Factor, Junction-To-Case 0. 2 0.33 W/C
Thermal Resistance, Junction-To-Case 5.0 3.0 °C/W
Notes:
(1) Pulse Test: Pulse width 300 sec. Duty Cycle 1.5%. (2) Maximum Junction Temperature = 125°C.
4 11 R0
2.1 - 29
OMH310 OMH315
2.1
ELECTRICAL CHARACTERISTICS: OMH310
(TC= 25° unless otherwise specified)
Characteristic Symbol Min. Typ. Max. Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage, ID= 250 µA, VGS= 0 V
Zero Gate Voltage Drain Current = V
Gate-Body Leakage, V
= ±12 V I
GS
, VDS= Max. Rat. I
GS
= Max. Rat. x 0.8, TC= 70°C - - 500.0 µA
V
DS
ON CHARACTERISTICS
Gate-Threshold Voltage, VDS= VGS, ID= 250 µA V
Static Drain-Source On-Resistance, V
Static Drain-Source On-Resistance T
On State Drain Current, V
> I
DS
= 10 Vdc, ID= 9.0 A R
GS
= 70°C - - 0.2
C
X R
D(on)
Max., VGS= 10 V I
DS(on)
DYNAMIC CHARACTERISTICS
Forward Transconductance, VDS> I
Input Capacitance V
Output Capacitance V
Reverse Transfer Capacitance f = 1.0 mHz C
D(on)
X R
Max., ID= 9.0A g
DS(on)
DS
= 25 V, C
= 0, C
GS
SWITCHING CHARACTERISTICS
Turn-On Delay Time t
Rise Time V
Turn-Off Delay Time R
= 30 V, ID= 3 A, t
DD
= 50 , VGS= 10 V t
GS
Fall Time t
SOURCE DRAIN DIODE CHARACTERISTICS
Source - Drain Current I
Source - Drain Current Pulsed I
Forward On-Voltage, I
Reverse Recovery Time
Reverse Recovered Charge Q
= 28 A, VGS= 0 V
SD
I
= 13 A, di/dt = 100 A/µSec
SD
RESISTOR CHARACTERISTICS
Resistor Tolerance R
Temperature Coefficient, -40°C to +70°C T
* Indicates Pulse Test 300 µsec, Duty Cycle 1.5%
(BR)DSS
DSS
GSS
GS(th)
DS(on)
D(on)
fs
iss
oss
rss
d(on)
r
d(off)
f
SD
*--56A
SDM
SD
t
rr
rr
S
cr
50--V
- - 25.0 µA
- - ±500 nA
2.0 - 4.0 V
- - 0.1
15--A
3.0 - - mho
- - 650 pF
- - 450 pF
- - 280 pF
- - 30 ns
- - 85 ns
- - 90 ns
- - 110 ns
--14A
- - 1.8 V
- 120 - ns
- 0.15 - µC
9.0 10 11 m
- 100 - ppm
2.1 - 30
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