TWO POWER MOSFETS IN HERMETIC
ISOLATED SIP PACKAGE
100V Thru 500V, Dual High Current,
N-Channel MOSFETs
FEATURES
• Two Isolated MOSFETs In A Hermetic Metal Package
• Fast Switching, Low Drive Current
• Ease of Paralleling For Added Power
• Low R
• Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications
such as switching power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
DS(on)
OM6214SS
OM6215SS
OM6216SS
OM6217SS
MAXIMUM RATINGS
PART NUMBER V
OM6214SS 100V .065 30A
OM6215SS 200V .095 25A
OM6216SS 400V .3 15A
OM6217SS 500V .4 13A
SCHEMATIC CONNECTION DIAGRAM
DS
R
DS(ON)
FET#1 FET#2
DSGGSD
I
D(MAX)
3.1
4 11 R4
Supersedes 1 07 R3
3.1 - 109
3.1
OM6214SS - OM6217SS
ELECTRICAL CHARACTERISTICS: T
= 25° unless otherwise noted ELECTRICAL CHARACTERISTICS: TC= 25° unless otherwise noted
C
STATIC P/N OM6214SS (Per FET) (100 Volt) STATIC P/N OM6215SS (Per FET) (200 Volt)
Parameter Min. Typ. Max. Units Test Conditions Parameter Min. Typ. Max. Units Test Conditions
BV
Drain-Source Breakdown 100 V VGS= 0, BV
DSS
Voltage I
V
Gate-Threshold Voltage 2.0 4.0 V VDS= VGS, ID= 250 mAV
GS(th)
I
Gate-Body Leakage ±100 nA VGS= ±20 V I
GSSF
I
Zero Gate Voltage Drain 0.1 0.25 mA VDS= Max. Rat., VGS= 0 I
DSS
Current 0.2 1.0 mA V
I
D(on)
V
DS(on)
R
DS(on)
R
DS(on)
3.1 - 110
On-State Drain Current
Static Drain-Source On-State 1.1 1.3 V VGS= 10 V, ID= 20 A V
1
Voltage
Static Drain-Source On-State .055 .065 VGS= 10 V, ID= 20 A R
Resistance
1
Static Drain-Source On-State .09 0.11 VGS= 10 V, ID= 20 A, R
Resistance
1
1
30 A VDS 2 V
DYNAMIC DYNAMIC
g
Forward Transductance
fs
C
Input Capacitance 2700 pF VGS= 0 C
iss
C
Output Capacitance 1300 pF VDS= 25 V C
oss
C
Reverse Transfer Capacitance 470 pF f = 1 MHz C
rss
t
Turn-On Delay Time 28 ns VDD= 30 V, ID@ 20 A t
d(on)
t
Rise Time 45 ns Rg= 5.0 W, VG= 10V t
r
t
Turn-Off Delay Time 100 ns t
d(off)
t
Fall Time 50 ns t
f
1
9.0 10 S(W ) VDS 2 V
= 250 mA Voltage ID= 250 mA
D
= 0.8 Max. Rat., VGS= 0, Current 0.2 1.0 mA VDS= 0.8 Max. Rat., VGS= 0,
DS
T
= 125° C TC= 125° C
C
, VGS= 10 V I
DS(on)
TC= 125 C Resistance
(W)
(MOSFET) switching times are
essentially independent of
operating temperature.
, ID= 20 A g
DS(on)
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
Continuous Source Current - 30 A Modified MOSPOWER I
S
(Body Diode) symbol showing (Body Diode) symbol showing
I
Source Current
SM
(Body Diode) Junction rectifier. (Body Diode) Junction rectifier.
VSDDiode Forward Voltage
t
Reverse Recovery Time 400 ns TJ= 150 C,IF= IS,t
rr
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
1
1
- 140 A the integral P-N I
- 2.5 V TC= 25 C, IS= -40 A, VGS= 0 VSDDiode Forward Voltage
dl
/ds = 100 A/ms dlF/ds = 100 A/ms
F
Drain-Source Breakdown 200 V VGS= 0,
DSS
Gate-Threshold Voltage 2.0 4.0 V VDS= V
GS(th)
Gate-Body Leakage ±100 nA VGS= ±20 V
GSSF
Zero Gate Voltage Drain 0.1 0.25 mA VDS= Max. Rat., VGS= 0
DSS
On-State Drain Current
D(on)
Static Drain-Source On-State 1.36 1.52 V VGS= 10 V, ID= 16 A
DS(on)
DS(on)
DS(on)
fs
iss
oss
rss
d(on)
r
d(off)
f
S
SM
rr
1
Voltage
Static Drain-Source On-State .085 .095 VGS= 10 V, ID= 16 A
Resistance
1
Static Drain-Source On-State 0.14 0.17 VGS= 10 V, ID= 16 A,
1
Forward Transductance
Input Capacitance 2400 pF VGS= 0
Output Capacitance 600 pF VDS= 25 V
Reverse Transfer Capacitance 250 pF f = 1 MHz
Turn-On Delay Time 25 ns VDD= 75 V, ID@ 16 A
Rise Time 60 ns Rg= 5.0 W,VGS= 10V
Turn-Off Delay Time 85 ns
Fall Time 38 ns
Continuous Source Current - 25 A Modified MOSPOWER
Source Current
Reverse Recovery Time 350 ns TJ= 150 C,IF= IS,
1
1
1
1
25 A VDS 2 V
8.0 12.5 S(W ) VDS 2 V
(W)
- 100 A the integral P-N
- 2 V TC= 25 C, IS= -30 A, VGS= 0
, I
= 250 m
GS
D
, VGS= 10 V
DS(on)
TC= 125 C
, ID= 16 A
DS(on)
(MOSFET) switching times are
essentially independent of
operating temperature.