OM6214SS OM6216SS
OM6215SS OM6217SS
TWO POWER MOSFETS IN HERMETIC
ISOLATED SIP PACKAGE
100V Thru 500V, Dual High Current,
N-Channel MOSFETs
FEATURES
•Two Isolated MOSFETs In A Hermetic Metal Package
•Fast Switching, Low Drive Current
•Ease of Paralleling For Added Power
•Low RDS(on)
•Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
MAXIMUM RATINGS
PART NUMBER |
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VDS |
RDS(ON) |
ID(MAX) |
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OM6214SS |
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100V |
.065 |
30A |
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OM6215SS |
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200V |
.095 |
25A |
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3.1 |
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OM6216SS |
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400V |
.3 |
15A |
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OM6217SS |
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500V |
.4 |
13A |
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SCHEMATIC |
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CONNECTION DIAGRAM |
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FET#1 FET#2
D S G G S D
4 11 R4 |
3.1 - 109 |
Supersedes 1 07 R3 |
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1.3 |
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ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted |
ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted |
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STATIC P/N OM6214SS (Per FET) (100 Volt) |
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STATIC P/N OM6215SS (Per FET) (200 Volt) |
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Parameter |
Min. |
Typ. |
Max. |
Units |
Test Conditions |
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Parameter |
Min. |
Typ. |
Max. |
Units |
Test Conditions |
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BVDSS |
Drain-Source Breakdown |
100 |
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V |
VGS = 0, |
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BVDSS |
Drain-Source Breakdown |
200 |
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V |
VGS = 0, |
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Voltage |
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ID = 250 mA |
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Voltage |
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ID = 250 mA |
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VGS(th) |
Gate-Threshold Voltage |
2.0 |
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4.0 |
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V |
VDS = VGS, ID = 250 mA |
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VGS(th) |
Gate-Threshold Voltage |
2.0 |
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4.0 |
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V |
VDS = VGS, ID = 250 m |
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IGSSF |
Gate-Body Leakage |
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±100 |
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nA |
VGS = ±20 V |
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IGSSF |
Gate-Body Leakage |
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±100 |
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nA |
VGS = ±20 V |
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IDSS |
Zero Gate Voltage Drain |
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0.1 |
0.25 |
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mA |
VDS = Max. Rat., VGS = 0 |
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IDSS |
Zero Gate Voltage Drain |
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0.1 |
0.25 |
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mA |
VDS = Max. Rat., VGS = 0 |
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Current |
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0.2 |
1.0 |
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mA |
VDS = 0.8 Max. Rat., VGS = 0, |
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Current |
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0.2 |
1.0 |
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mA |
VDS = 0.8 Max. Rat., VGS = 0, |
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TC = 125° C |
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TC = 125° C |
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ID(on) |
On-State Drain Current1 |
30 |
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A |
VDS 2 VDS(on), VGS = 10 V |
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ID(on) |
On-State Drain Current1 |
25 |
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A |
VDS 2 VDS(on), VGS = 10 V |
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VDS(on) |
Static Drain-Source On-State |
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1.1 |
1.3 |
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V |
VGS = 10 V, ID = 20 A |
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VDS(on) |
Static Drain-Source On-State |
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1.36 |
1.52 |
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V |
VGS = 10 V, ID = 16 A |
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Voltage1 |
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Voltage1 |
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RDS(on) |
Static Drain-Source On-State |
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.055 |
.065 |
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VGS = 10 V, ID = 20 A |
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RDS(on) |
Static Drain-Source On-State |
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.085 |
.095 |
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VGS = 10 V, ID = 16 A |
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Resistance1 |
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Resistance1 |
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RDS(on) |
Static Drain-Source On-State |
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.09 |
0.11 |
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VGS = 10 V, ID = 20 A, |
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RDS(on) |
Static Drain-Source On-State |
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0.14 |
0.17 |
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VGS = 10 V, ID = 16 A, |
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1.3 |
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Resistance1 |
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TC = 125 C |
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Resistance1 |
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TC = 125 C |
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DYNAMIC |
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DYNAMIC |
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110 |
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gfs |
Forward Transductance1 |
9.0 |
10 |
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S()WW)( |
VDS 2 VDS(on), ID = 20 A |
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gfs |
Forward Transductance1 |
8.0 |
12.5 |
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S()WW)( |
VDS 2 VDS(on), ID = 16 A |
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Ciss |
Input Capacitance |
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2700 |
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pF |
VGS = 0 |
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Ciss |
Input Capacitance |
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2400 |
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pF |
VGS = 0 |
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Coss |
Output Capacitance |
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1300 |
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pF |
VDS = 25 V |
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Coss |
Output Capacitance |
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600 |
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pF |
VDS = 25 V |
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Crss |
Reverse Transfer Capacitance |
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470 |
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pF |
f = 1 MHz |
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Crss |
Reverse Transfer Capacitance |
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250 |
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pF |
f = 1 MHz |
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td(on) |
Turn-On Delay Time |
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28 |
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ns |
VDD = 30 V, ID @ 20 A |
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td(on) |
Turn-On Delay Time |
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25 |
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ns |
VDD = 75 V, ID @ 16 A |
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tr |
Rise Time |
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45 |
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ns |
Rg = 5.0 W , VG = 10V |
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tr |
Rise Time |
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60 |
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ns |
Rg = 5.0 W ,VGS = 10V |
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(MOSFET) switching times are |
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(MOSFET) switching times are |
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td(off) |
Turn-Off Delay Time |
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100 |
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td(off) |
Turn-Off Delay Time |
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85 |
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ns |
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essentially independent of |
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essentially independent of |
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tf |
Fall Time |
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50 |
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ns |
operating temperature. |
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tf |
Fall Time |
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38 |
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ns |
operating temperature. |
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BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS |
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS |
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IS |
Continuous Source Current |
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- 30 |
A |
Modified MOSPOWER |
D |
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IS |
Continuous Source Current |
- 25 |
A |
Modified MOSPOWER |
D |
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(Body Diode) |
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symbol showing |
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(Body Diode) |
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symbol showing |
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ISM |
Source Current1 |
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- 140 |
A |
G |
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ISM |
Source Current1 |
- 100 |
A |
G |
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the integral P-N |
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the integral P-N |
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(Body Diode) |
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Junction rectifier. |
S |
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(Body Diode) |
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Junction rectifier. |
S |
VSD |
Diode Forward Voltage1 |
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- 2.5 |
V |
TC = 25 C, IS = -40 A, VGS = 0 |
VSD |
Diode Forward Voltage1 |
- 2 |
V |
TC = 25 C, IS = -30 A, VGS = 0 |
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trr |
Reverse Recovery Time |
400 |
ns |
TJ = 150 C,IF = IS, |
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trr |
Reverse Recovery Time |
350 |
ns |
TJ = 150 C,IF = IS, |
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dlF/ds = 100 A/ms |
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dlF/ds = 100 A/ms |
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1 Pulse Test: Pulse Width 300msec, Duty Cycle |
2%. |
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1 Pulse Test: Pulse Width |
300msec, Duty Cycle 2%. |
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OM6217SS - OM6214SS
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