OMNIREL OM6502ST, OM6501ST Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

.430
.410

.200
.190

.038 MAX.

.005

.120 TYP.

.537
.527

.665
.645

.420
.410

.150
.140

.750
.500

.100 TYP.

.035
.025

.045
.035

(IGBT) IN A HERMETIC TO-257AA PACKAGE

500 Volt, 5 And 10 Amp, N-Channel IGBT
In A Hermetic Metal Package

FEATURES

• Isolated Hermetic Metal Package

• High Input Impedance

• Low On-Voltage

• High Current Capability

• Fast Turn-Off

• Low Conductive Losses

• Available Screened to MIL-S-19500, TX, TXV And S Levels

DESCRIPTION

The IGBT power transistor features a high impedance insulated gate and a low
on-resistance characteristic of bipolar transistors. These devices are ideally suited
for motor drives, UPS converters, power supplies and resonant power converters.

OM6501ST
OM6502ST

4 11 R2
Supersedes 2 07 R1

MAXIMUM RATINGS @ 25°C Unless Specified Otherwise

PART IC (Cont.) V

NUMBER @ 90°C, A V V ns °C/W W °C

OM6501ST 5 500 2.8 400 3.8 35 150
OM6502ST 10 500 2.8 400 3.0 42 150

(BR)CESVCE (sat)

(Typ.) Tf(Typ.)

SCHEMATIC MECHANICAL OUTLINE PACKAGE OPTIONS

Collector

123
CEG

Gate

Emitter

Pin 1: Collector
Pin 2: Emitter
Pin 3: Gate

3.1 - 139

Note: IGBTs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information.

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P

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MOD PAK

6 PIN SIP

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3.1