OMNIREL OM60L60HB, OM60L120HB, OM50F60HB, OM45L120HB, OM35F120HB Datasheet
3.1 - 55
3.1
4 11 R0
High Current, High Voltage 600V And 1200V,
Up To 75 Amp IGBTs With FRED Diodes,
Half-Bridge Configuration
HALF-BRIDGE IGBTS IN HERMETIC ISOLATED
POWER BLOCK PACKAGES
FEATURES
• Includes Internal FRED Diode
• Rugged Package Design
• Solder Terminals
• Very Low Saturation Voltage
• Fast Switching, Low Drive Current
• Available Screened To MIL-S-19500, TX, TXV And S Levels
• Ceramic Feedthroughs
DESCRIPTION
This series of hermetically packaged products feature the latest advanced IGBT
technology combined with a package designed specifically for high efficiency, high
current applications. They are ideally suited for Hi-Rel requirements where small
size, high performance and high reliability are required, and in applications such as
switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits.
GENERAL CHARACTERISTICS
@ 25°C (Per Switch)
SCHEMATIC
Part V
CE
I
C
Number (V) (A)
V
CE(sat)
Type
OM60L60HB 600 75 1.8 Volts Lo Sat.
OM45L120HB 1200 70 3 Volts Lo Sat.
OM50F60HB 600 75 2.7 Volts Hi Speed
OM35F120HB 1200 70 4 Volts Hi Speed
OM45L120HB
OM35F120HB
OM60L60HB
OM50F60HB
C1 G1
C2 E1
Preliminary Data Sheet
C1 G1 C2 E1 G2 E2
3.1 - 56
OM60L60HB OM45L120HB OM50F60HB OM35F120HB
3.1
ELECTRICAL CHARACTERISTICS: OM60L60HB
(TC= 25°C unless otherwise specified)
Characteristic Symbol Min. Typ. Max. Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage, IC= 250 µA, VCE= 0 V
(BR)CES
600 - - V
Zero Gate Voltage Drain Current , V
GE
= 0, VCE= Max. Rat. I
CES
- - 0.25 mA
V
CE
= 0.8 Max. Rat., VGE= 0, TC= 125°C - - 1.0 mA
Gate Emitter Leakage Current, V
GE
= ±20 V, VCE= 0 V I
GES
- - ±100 nA
ON CHARACTERISTICS
Gate-Threshold Voltage, VCE= VGE, IC= 250 µA V
GE(th)
2.5 - 5.0 V
Collector Emitter saturation Voltage, V
GE
= 15 V, IC= 60 A V
CE(sat)
- - 1.8 V
DYNAMIC CHARACTERISTICS
Forward Transconductance VCE= 10 V, IC= 60 A g
fs
30 - - S
Input Capacitance V
GE
= 0, C
iss
- 4000 - pF
Output Capacitance V
CE
= 25 V, C
oss
- 340 - pF
Reverse Transfer Capacitance f = 1.0 mHz C
rss
- 100 - pF
SWITCHING-INDUCTIVE RESISTIVE CHARACTERISTICS
Turn-On Delay Time t
d(on)
-50-nS
Rise Time V
CC
= 480 V, IC= 60 A, t
r
- 200 - nS
Turn-Off Delay Time R
GS
= 2.7 , VGS= 15 V, t
d(off)
- 600 - nS
Fall Time L = 100 µH t
f
- 500 - nS
SWITCHING-INDUCTIVE LOAD CHARACTERISTICS
Turn-On Delay Time V
CE(clamp)
= 480 V, IC= 60 A t
d(on)
- 1000 - nS
Fall Time V
GE
= 15 V, Rg= 2.7 t
f
- 1000 - nS
Turn-Off Losses L = 100 µH, T
j
= 125°C E
(OFF)
- 26 - m Ws
SOURCE DRAIN DIODE CHARACTERISTICS
Maximum Forward Voltage
I
F
= 60 A, Tj= 25°C
V
f
- - 1.85
V
I
F
= 60 A, Tj= 150°C - - 1.50
Maximum Reverse Current
V
R
= 600 V, Tj= 25°C
I
r
- - 200 µA
V
R
= 480 V, Tj= 125°C - - 14 mA
Reverse Recovery Time
I
F
= 1 A, di/dt = 200 A µ/S
t
rr
--50nS
V
R
= 30 V, Tj= 25°C
ELECTRICAL CHARACTERISTICS: OM45L120HB
(TC= 25°C unless otherwise specified)
Characteristic Symbol Min. Typ. Max. Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage, IC= 3 mA, VCE= 0 V
(BR)CES
1200 - - V
Zero Gate Voltage Drain Current , V
GE
= 0, VCE= Max. Rat. I
CES
- - 3.0 mA
V
CE
= 0.8 Max. Rat., VGE= 0, Tj= 125°C - - 1.2 mA
Gate Emitter Leakage Current, V
GE
= ±20 V, VCE= 0 V I
GES
- - ±100 nA
ON CHARACTERISTICS
Gate-Threshold Voltage, VCE= VGE, IC= 4 mA V
GE(th)
4.0 - 8.0 V
Collector Emitter saturation Voltage, V
GE
= 15 V, IC= 45 A V
CE(sat)
- - 3.0 V
DYNAMIC CHARACTERISTICS
Forward Transconductance VCE= 10 V, IC= 45 A g
fs
26 - - S
Input Capacitance V
GE
= 0, C
iss
- 4200 - pF
Output Capacitance V
CE
= 25 V, C
oss
- 290 - pF
Reverse Transfer Capacitance f = 1.0 mHz C
rss
-65-pF
SWITCHING-INDUCTIVE RESISTIVE CHARACTERISTICS
Turn-On Delay Time t
d(on)
-80-nS
Rise Time V
CC
= 960 V, IC= 45 A, t
r
- 250 - nS
Turn-Off Delay Time R
GS
= 2.7 , VGS= 15 V, t
d(off)
- 450 - nS
Fall Time L = 100 µH t
f
- 1200 - nS
SWITCHING-INDUCTIVE LOAD CHARACTERISTICS
Turn-On Delay Time V
CE(clamp)
= 960 V, IC= 45 A t
d(on)
- 450 - nS
Fall Time V
GE
= 15 V, Rg= 2.7 t
f
- 1200 - nS
Turn-Off Losses L = 100 µH, T
j
= 125°C E
(OFF)
- 27 - m Ws
SOURCE DRAIN DIODE CHARACTERISTICS
Maximum Forward Voltage
I
F
= 52 A, Tj= 25°C
V
f
- - 2.55
V
I
F
= 52 A, Tj= 150°C - - 2.15
Maximum Reverse Current
V
R
= 1200 V, Tj= 25°C
I
r
- - 2.2 mA
V
R
= 960 V, Tj= 125°C - - 14 mA
Reverse Recovery Time
I
F
= 1 A, di/dt = 200 A µ/S
t
rr
--60nS
V
R
= 30 V, Tj= 25°C
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