•Low noise
NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz
NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
•6-pin thin-type small mini mold package adopted
•Built-in 2 transistors (2 u 2SC5184)
ORDERING INFORMATION
Part Number Quantity Packing Style
P
PA828TF Loose products
(50 pcs)
P
PA828TF-T1 Taping products
(3 kpcs/reel)
Remark
If you require an evaluation sample, please contact
an NEC Sales Representative (Unit sample quantity
is 50 pcs).
Embossed tape 8 mm wide.
Pin 6 (Q1 Base), Pin 5 (Q2
Emitter), Pin 4 (Q2 Base) face to
perforation side of the tape.
ABSOLUTE MAXIMUM RATINGS (TA = 25
PACKAGE DRAWINGS (Unit: mm)
2.10±0.1
1.25±0.1
+0.1
–0.05
0.22
0.13±0.05
1.30
2.00±0.2
0.60±0.1
0.65
0.65
0.45
R86
321
456
0 to 0.1
PIN CONFIGURATION (Top View)
C)
qqqq
B1
E2 B2
Parameter Symbol Rating Unit
Collector to Base Voltage V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current I
Total Power Dissipation P
Junction Temperature T
Storage Temperature T
Caution is required concerning excess input, such as from static electricity, due to the high-precision
fabrication processes used for this device.
Document No. P12693EJ1V0DS00 (1st edition)
Date Published July 1997 N
Printed in Japan
CBO
CEO
EBO
C
T
90 in 1 element
180 in 2 elements
j
stg
The information in this document is subject to change without notice.
ParameterSymbolConditionMIN.TYP.MAX.Unit
Collector Cutoff CurrentI
Emitter Cutoff CurrentI
DC Current Gainh
Gain Bandwidth Product (1)f
Gain Bandwidth Product (2)f
Feedback CapacitanceC
Insertion Power Gain (1)|S
Insertion Power Gain (2)|S
CBO
EBO
21e
21e
VCB = 5 V, IE = 00.1
VEB = 1 V, IC = 00.1
VCE = 2 V, IC = 20 mA
FE
T
VCE = 2 V, IC = 20 mA, f = 2 GHz911GHz
T
VCE = 1 V, IC = 10 mA, f = 2 GHz79GHz
VCB = 2 V, IE = 0, f = 1 MHz
re
2
|
VCE = 2 V, IC = 20 mA, f = 2 GHz78.5dB
2
|
VCE = 1 V, IC = 10 mA, f = 2 GHz67.5dB
Note 1
Note 2
70140
0.40.8pF
Noise Figure (1)NFVCE = 2 V, IC = 3 mA, f = 2 GHz1.32dB
Noise Figure (2)NFVCE = 1 V, IC = 3 mA, f = 2 GHz1.32dB
hFE Ratioh
Notes 1.
Pulse measurement P
Capacitance between collector and base measured with a capacitance meter (auto-balancing bridge
2.
FE1/hFE2
VCE = 2 V, IC = 20 mA
FE
1 = smaller hFE value among Q1 and Q2
h
FE
2 = larger hFE value among Q1 and Q2
h
W
d 350 Ps, Duty cycle d 2%
0.85
method). Emitter should be connected to the guard pin of capacitance meter.
A
P
A
P
hFE CLASSIFICATION
RankKB
MarkingR86
hFE value70 to 140
2
PPPP
PA828TF
TYPICAL CHARACTERISTICS (T
A = 25
C)
qqqq
Total Power Dissipation vs. Ambient TemperatureCollector Current vs. DC Base Voltage
50
VCE = 2 V
200
(mW)
T
100
Total Power Dissipation P
2 Elements in Total
Per Element
180 mW
90 mW
050100150
Ambient Temperature T
A
(˚C)
40
(mA)
C
30
20
10
Collector Current I
00.51.0
DC Base Voltage V
Collector Current vs. Collector to Emitter VoltageDC Current Gain vs. Collector Current
25
500
BE
(V)
20
(mA)
C
15
10
Collector Current I
5
01.02.03.0
Collector to Emitter Voltage V
µ
200 A
µ
180 A
µ
160 A
µ
140 A
µ
120 A
µ
100 A
µ
80 A
µ
60 A
40 A
µ
IB = 20 A
CE
µ
(V)
200
FE
VCE = 2 V
100
50
DC Current Gain h
VCE = 1 V
20
10
125102050100
Collector Current I
C
(mA)
3
PPPP
PA828TF
Gain Bandwidth Product vs. Collector CurrentInsertion Power Gain vs. Collector Current
15
f = 2 GHz
(GHz)
T
VCE = 2 V
10
VCE = 1 V
5
Gain Bandwidth Product f
123571020
Collector Current IC (mA)
Noise Figure vs. Collector CurrentFeedback Capacitance vs. Collector to Base Voltage