NEC UPA821TF-T1, UPA821TF, UPA821TC Datasheet

DATA SHEET

NPN SILICON RF TWIN T RANSISTOR

µµµµ

PA821TC

NPN SILICON EPITAXIAL TWIN TRANSISTOR

(WITH BUILT-IN 2

FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION

The µPA821TC has built-in low-voltage two transistors which are designed for low-noise amplification in the VHF to

UHF band.

FEATURES

• Low noise: NF= 1.2 dB TYP.@ f = 1 GHz, VCE = 3 V, IC = 7 mA

21e

• High gain: IS

• Flat-lead 6-pin thin-type ultra super minimold package

• Built-in 2 transistors (2 × 2SC5006)

l2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA

2SC5006)

××××

ORDERING INFORMATION

Part Number Package Quantity Supplying Form

µ

PA821TC Loose products

µ

PA821TC-T1

Remark

ABSOLUTE MAXIMUM RATINGS (TA = +25

Parameter Symbol Ratings Unit
Collector to Base Voltage V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current I
Total Power Dissipation

Junction Temperature T
Storage Temperature T

Mounted on 1.08 cm

Note

Flat-lead 6-pin
thin-type ultra
super minimold

To order evaluation samples, please contact your local NEC sales office. (Part number for sample order:

PA821TC. Unit sample quantity is 50 pcs).

µ

P

2

(50 pcs)

Taping products

(3 kp/reel)

CBO

CEO

EBO

C

Note

T

× 1.0 mm glass epoxy substrate.

j

stg

200 in 1 element
230 in 2 elements

−

65 to 150 °C

Embossed tape 8 mm wide.
Pin 6 (Q1 Base), Pin 5 (Q2 Emitter), Pin 4 (Q2 Base) face to perforation
side of the tape.

C)

°°°°

20 V
12 V

3V

100 mA

mW

150 °C

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

Document No. P14552EJ1V0DS00 (1st edition)
Date Published November 1999 N CP(K)
Printed in Japan

Caution Electro-static sensitive devices.

1999©

ELECTRICAL CHARACTERISTICS (TA = +25°C)

Parameter Symbol Conditions MIN. TYP. MAX. Unit
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain Bandwidth Product f
Feedback Capacitance C
Insertion Power Gain |S
Noise Figure NF VCE = 3 V, IC = 7 mA, f = 1 GHz

CBO

EBO

21e

VCB = 10 V, IE = 0
VEB = 1 V, IC = 0

FE

T

VCE = 3 V, IC = 7 mA
VCE = 3 V, IC = 7 mA, f = 1 GHz 3.0 4.5
VCB = 3 V, IE = 0, f = 1 MHz

re

2

|

VCE = 3 V, IC = 7 mA, f = 1 GHz 7.0 9.0

Note 1

Note 2

−−

−−

70

−

−

−

0.7 1.5 pF

1.2 2.5 dB

µµµµ

1.0

1.0

140

−

−

PA821TC

A

µ

A

µ

GHz

dB

Notes 1.

Pulse Measurement: PW ≤ 350
Capacitance between collector and base measured with a capacitance meter (auto−balancing bridge

2.

method). Emitter should be connected to the guard pin of capacitance meter.

hFE CLASSIFICATION

Rank FB
Marking 81
hFE Value 70 to 140

s, Duty Cycle ≤ 2 %

µ

2

Data Sheet P14552EJ1V0DS00

µµµµ

PA821TC

TYPICAL CHARACTERISTICS (TA = +25

TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE

230
200

100

Total Power Dissipation PT (mW)

16

12

Collector Current IC (mA)

0

8

4

0

2 Elements in total

Per
Element

0 50 100 150

Ambient Temperature TA (°C)

COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE

0123456

Collector to Emitter Voltage VCE (V)

Free Air

IB = 160 A
IB = 140 A
IB = 120 A

IB = 100 A
IB = 80 A
IB = 60 A
IB = 40 A

IB = 20 A

C)

°°°°

COLLECTOR CURRENT vs.
DC BASE VOLTAGE

20

VCE = 3 V

10

Collector Current IC (mA)

0

0 0.5 1.0

DC Base Voltage VBE (V)

DC CURRENT GAIN vs.
COLLECTOR CURRENT

1 000

µ
µ
µ

µ
µ
µ
µ

µ

100

DC Current Gain hFE

10

0.1 1 10 100
Collector Current IC (mA)

VCE = 3 V

Data Sheet P14552EJ1V0DS00

3

µµµµ

PA821TC

GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT

7.00
VCE = 3 V
f = 1 GHz

6.00

(GHz)

T

5.00

4.00

3.00

2.00

1.00

Gain Bandwidth Product f

0.00

1 100

Collector Current IC (mA)

NOISE FIGURE vs. COLLECTOR CURRENT

6.00
VCE = 3 V
f = 1 GHz

5.00

4.00

3.00

2.00

Noise Figure NF (dB)

1.00

0.00

1 10 100

Collector Current IC (mA)

INSERTION POWER GAIN vs.
COLLECTOR CURRENT

14.00
VCE = 3 V
f = 1 GHz

12.00

(dB)

2



21e

10.00

8.00

6.00

4.00

Insertion Power Gain S

2.00
1 100

1010

Collector Current IC (mA)

INSERTION POWER GAIN vs. FREQUENCY

25.0
VCE = 3 V

C

= 7 mA

(dB)

2



21e

20.0

I

15.0

10.0

5.0

Insertion Power Gain S

0.0

0.1 1.0 10.0
Frequency f (GHz)

FEEDBACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE

0.800

(pF)

re

0.600

0.400

0.200

Feedback Capacitance C

0.000
1 10 100

Collector to Base Voltage V

4

f = 1 MHz

CB

(V)

Data Sheet P14552EJ1V0DS00