Motorola MC74LVQ240DT, MC74LVQ240DW, MC74LVQ240M, MC74LVQ240SD Datasheet

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SEMICONDUCTOR TECHNICAL DATA
1
REV 2
Motorola, Inc. 1995
12/95
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The MC74LVQ240 is a high performance, inverting octal buffer operating from a 2.7 to 3.6V supply. The MC74LVQ240 is suitable for memory address driving and all TTL level bus oriented transceiver applications.
Current drive capability is 12mA at the outputs. The Output Enable (OE
) input, when HIGH, disables the output by placing them in a HIGH Z
condition.
Designed for 2.7 to 3.6V V
CC
Operation – Ideal for Low Power/Low
Noise Applications
Guaranteed Simultaneous Switching Noise Level and Dynamic
Threshold Performance
Guaranteed Skew Specifications
Guaranteed Incident Wave Switching into 75
Low Static Supply Current (10µA) Substantially Reduces System Power
Requirements
Latchup Performance Exceeds 500mA
ESD Performance: Human Body Model >2000V
Pinout: 20–Lead (Top View)
1920 18 17 16 15 14
21 3 4 5 6 7
V
CC
13
8
12
9
11
10
2OE
1O0 2D0 1O1 2D1 1O2 2D2 1O3 2D3
1OE 1D0 2O0 1D1 2O1 1D2 2O2 1D3 2O3 GND
PIN NAMES
Function
Output Enable Inputs Data Inputs 3–State Outputs
Pins
nOE 1Dn, 2Dn 1On
, 2On

LOW–VOLTAGE CMOS
OCTAL BUFFER
LVQ
DW SUFFIX
PLASTIC SOIC CASE 751D–04
DT SUFFIX
PLASTIC TSSOP
CASE 948E–02
20
1
20
1
M SUFFIX
PLASTIC SOIC EIAJ
CASE 967–01
20
1
SD SUFFIX
PLASTIC SSOP
CASE 940C–03
20
1
MC74LVQ240
MOTOROLA ECLinPS and ECLinPS Lite
DL140 — Rev 3
2
LOGIC DIAGRAM
1OE
1
1D0
2
1O0
18
1D1
4
1O1
16
1D2
6
1O2
14
1D3
8
1O3
12
2OE
19
2D0
17
2O0
3
2D1
15
2O1
5
2D2
13
2O2
7
2D3
11
2O3
9
INPUTS OUTPUTS
1OE 2OE
1Dn 2Dn
1On, 2On
L L L L H H
H X Z
H = High Voltage Level; L = Low Voltage Level; Z = High Impedance State; X = High or Low Voltage Level and Transitions Are Acceptable, for ICC reasons, DO NOT FLOAT Inputs
MC74LVQ240
ECLinPS and ECLinPS Lite DL140 — Rev 3
3 MOTOROLA
ABSOLUTE MAXIMUM RATINGS*
Symbol Parameter Value Condition Unit
V
CC
DC Supply Voltage –0.5 to +7.0 V
V
I
DC Input Voltage –0.5 VI VCC + 0.5V V
V
O
DC Output Voltage –0.5 VO VCC + 0.5 Output in HIGH or LOW State V
I
IK
DC Input Diode Current –20 VI = –0.5V mA
+20 VI = VCC + 0.5V mA
I
OK
DC Output Diode Current –20 VO = –0.5V mA
+20 VI = VCC + 0.5V mA
I
O
DC Output Source/Sink Current ±50 mA
I
CC
DC Supply Current ±400 mA
I
GND
DC Ground Current ±400 mA
T
STG
Storage Temperature Range –65 to +150 °C
* Absolute maximum continuous ratings are those values beyond which damage to the device may occur. Exposure to these conditions or
conditions beyond those indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is not implied.
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Typ Max Unit
V
CC
Supply Voltage 2.0 3.3 3.6 V
V
I
Input Voltage 0 V
CC
V
V
O
Output Voltage 0 V
CC
V
T
A
Operating Free–Air Temperature –40 +85 °C
V/t Input Transition Rise or Fall Rate, VIN from 0.8V to 2.0V, VCC = 3.0V 0 125 mV/ns
DC ELECTRICAL CHARACTERISTICS
TA = –40°C to +85°C
Symbol Characteristic Condition Min Max Unit
V
IH
HIGH Level Input Voltage (Note 1) 2.7V VCC 3.6V,
VO = 0.1V or VCC – 0.1V
2.0 V
V
IL
LOW Level Input Voltage (Note 1) 2.7V VCC 3.6V,
VO = 0.1V or VCC – 0.1V
0.8 V
V
OH
HIGH Level Output Voltage 2.7V VCC 3.6V; IOH = –50µA VCC– 0.1 V
VCC = 2.7V; IOH = –12mA 2.2 VCC = 3.0V; IOH = –12mA 2.48
V
OL
LOW Level Output Voltage 2.7V VCC 3.6V; IOL = 50µA 0.1 V
2.7V VCC 3.6V; IOL= 12mA 0.4
I
I
Input Leakage Current 2.7V VCC 3.6V; VI= VCC, GND ±1.0 µA
I
OZ
Maximum 3–State Leakage Current VI(OE) = VIL, VIH; VI, VO= VCC, GND ±2.5 µA
I
OLD
Minimum Dynamic Output Current (Note 2) VCC = 3.6V; V
OLD
= 0.8V Max 36 mA
I
OHD
VCC = 3.6V; V
OHD
= 2.0V Min –25 mA
I
CC
Quiescent Supply Current 2.7V VCC 3.6V; VI = VCC, GND 10 µA
1. These values of VI are used to test DC electrical characteristics only. Functional test should use VIH 2.4V, VIL 0.5V.
2. Incident wave switching on transmission lines with impedances as low as 75 for commercial temperature range is guaranteed. Maximum test
duration is 2ms, one output loaded at a time.
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