MITEL 4D469 Datasheet

PRODUCT INFORMATION

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840nm

4D469

VCSEL Array

Parallel Datacom, Telecom

13627.11 1999-01-13

CATHODE

CATHODE

FRONT VIEW

ANODES

METAL SHIELD

METAL SHIELD

HEAT SINK

MT GUIDE PINS

LEADS

SIDE VIEW

VCSEL Array in MT Package

All dimensions in mm

W ARNING: Laser Radiation, a void exposure
to beam. Class 3B laser product, potential
eye hazard. Warning labels in each box.

Optical and Electrical Characteristics

(25°C Case Temperature)

Test Condition:If=10mA. Fiber Ribbon: 50/125 GI, NA=0.2 or 62.5/125 GI, NA=0.275.
Note 1: Crosstalk between adjacent channels operating at 2GHz.

Absolute Maximum Ratings

PARAMETER SYMBOL LIMIT

Storage Temperature T

stg

-40 to +858C
Operating Temperature (derating: Fig.4) Top 0 to +708 C

Electrical Power Dissipation(derating: Fig.4) P

tot

20 mW/Channel

Continuous Forward Current (f<10 kHz) I

F

11 mA/Channel

Peak Forward Current (duty cycle<50%, f>1 MHz) I

FRM

18 mA/Channel

Reverse Voltage V

R

1.5 V

Soldering Temperature (2mm from the case for 10 sec) T

sld

2608C

This device consists of a 4-channel
VCSEL array in a miniature surface­mountable MT package. It is based on
a unique combination of self-alignment
technology and direct optical coupling
to fiber, resulting in pure beam shapes
and optimum coupling efficiency with­out need for active alignment.
Applications include parallel Fibre
Channel and optical interconnect
inter/intra-board. And it matches the
4D470 PIN Photodiode Array.

Thermal Characteristics

PARAMETER SYMBOL MIN. TYP. MAX. UNIT

Thermal Resistance R

th

TBD 8C/W

Temp. Coefficient-Wavelength dl/dT

j

0.06 nm/8C

Optical Power - Variation 0 to 708C DP

6

0.7 dB

Threshold Current - Variation 0 to 708C DI

th

6

0.6

mA

PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITION

Fiber-Coupled Power P

fiber

1.0 mW

Optical Power

P

o

1.1

mW

Slope Efficiency

h

250 mW/A

(dPo/dIF)

Beam Divergence

Q

15 deg Full Width at 1/e

2

Bandwidth f

c

2 GHz

(3dBel)

Peak Wavelength l

p

830 840 860 nm
Spectral Width(FWHM) Dl 0.5 1 nm
Forward Voltage (Fig.5) V

F

1.8 V

Threshold Current I

th

5.5 mA
Relative Intensity Noise RIN -130 dB/Hz f=1 GHz
Crosstalk X -25 dB

el

(Note 1)

PRELIMINARY

/

bb

The cathode is connected to the metal shield

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Preliminary and Advance Data/Information: Some datasheets carry the designation “Preliminary” or “Advance”. Preliminary Information represents
the design objective for a device type in development and may be revised without notice before the device reaches production. Advance
Information is intended for design guidance purposes and refers to a device type in early production where device characterization is
ongoing and information is still subject to change without notice. Current information on the status of Preliminary or Advance programs may
be obtained from Mitel Sales Offices, Representatives or Distributors.

Information relating to products and circuits (“Product”) furnished herein by Mitel Corporation or its subsidaries (“Mitel”) is believed to be reliable. However, Mitel assumes no liability for errors
that may appear in this document, or for liability otherwise arising from the application or use of any such information or Product or for any infringement of patents or other intellectual property

rights owned by third parties which may result from such application or use. Neither the supply of such information or the purchase of Product conveys any license, either expressed or

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