Microsemi Corporation MXP3001, MXP3002, MXP3003, MXP3004, MXP3005 Datasheet

MXP3000 Series

GaAs PIN Photodiode Chips

O P T O E L E C T R O N I C P R O D U C T S

PRODUCT PREVIEW

DESCRIPTION KEY FEATURES

	Microsemi’s GaAs PIN	The MXP3000 series of	!"Low Dark Current
	Photodiode chips are ideal for wide	photodiodes are originally offered in	!"Extremely low capacitance
	bandwidth 850nm optical	die form for manufacturers of	!"Wide bandwidth
			!"Fast response time
	networking applications.	photodiode modules, supervisory
		pump laser circuits, and combination
	The five devices offered feature		APPLICATIONS/BENEFITS
		PIN Photodiode-transimpedance
	excellent dark current ratings of 1-3	amplifier hybrids.	!"850nm Fiber Optic
	nA, and a breakdown voltage of 20		Applications
	Volts with the bandwidth options for

1.4 GHz (active area of 250 mm2),

1.75 GHz(active area of 200 mm2), 5 GHz (active area of 100 mm2), 7 GHz (active area of 60 mm2), and 8.75 GHz (active area of 30 mm2),

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

M O C. Microsemi. W W W

			Part Ratings and Characteristics
Item	Sym	MXP3001		MXP3002	MXP3003	MXP3004	MXP3005	Unit	Test Condition
Active Area(Dia.)	—	30		60	100	200	250	mm2	—
Photo Sensitive Area		0.0007		0.0028	0.0078	0.0314	0.0491	mm2
Detection Range	—	850		850	850	850	850	Nm	—
Responsivity	R	0.45		0.45	0.45	0.45	0.45	A/W	VR=-5V, l = 850nm
Dark Current	Idark	1		1	1	2	3	nA	VR=-5V
Capacitance	C	0.3		0.4	0.6	1.5	2	pF	VR=-5V
Rise/Fall Time	tr/tf	40		50	70	200	250	ps	VR=-5V, @ 850nm
Bandwidth		8.75		7	5	1.75	1.4	GHz	VR=-5V, @ 850nm
Breakdown Voltage	VB	20		20	20	20	20		IR=10uA
Chip Size		350 x 350		350 x 350	350 x 350	500 x 500	500 x 500	um x um
Bonding Pad Size		40 x 100		40 x 100	100	100	100	um x um

ERIESS MXP3000

Copyright 2000	Microsemi	Page 1
MSC1592.PDF 2000-10-16	Opto Electronics Products Group
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