Microsemi N3418, 2N3814S, 2N3419, 2N3419S, 2N3420 Technical data

2N3418JAN

TECHNICAL DATA

NPN MEDUIM POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/393

Devices

Qualified Level

2N3418

2N3419

2N3420

2N3421

JAN

JANTX

2N3814S

2N3419S

2N3420S

2N3421S

JANTXV

MAXIMUM RATINGS

2N3418, S

2N3419, S

Ratings

Symbol

2N3420, S

2N3421, S

Unit

Collector-Emitter Voltage

VCEO

60

80

Vdc

Collector-Base Voltage

VCBO

85

125

Vdc

TO- 5*

Emitter-Base Voltage

VEBO

8.0

Vdc

2N3418, 2N3419,

Collector Current

IC

3.0

Adc

2N3420, 2N3421

tP ≤ 1.0 ms, duty cycle ≤ 50%

5.0

Total Power Dissipation @ TA = +250C(1)

PT

1.0

W

@ TC = +1000C(2)

15

W/0C

Operating & Storage Temperature Range

Top, Tstg

-65 to +200

0C

TO-39* (TO205-AD)

1) Derate linearly 5.72 mW/0C for TA > 250C

2) Derate linearly 150 mW/0C for TC > 1000C

2N3418S, 2N3419S,

2N3420S, 2N3421S

*See Appendix A for

Package Outline

ELECTRICAL CHARACTERISTICS

Characteristics

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Current

IC = 50 mAdc, IB = 0

2N3418, S; 2N3420, S

V(BR)CEO

60

Vdc

2N3419, S; 2N3421, S

80

Collector-Emitter Cutoff Current

ICEX

μAdc

VBE = -0.5 Vdc, VCE = 80 Vdc

2N3418, S; 2N3420, S

0.3

VBE = -0.5 Vdc, VCE = 120 Vdc

2N3419, S; 2N3421, S

0.3

Collector-Emitter Cutoff Current

μAdc

VCE = 45 Vdc, IB = 0

2N3418, S; 2N3420, S

ICEO

5.0

VCE = 60 Vdc, IB = 0

2N3419, S; 2N3421, S

5.0

Emitter-Base Cutoff Current

μAdc

VEB = 6.0 Vdc, IC = 0

IEBO

0.5

VEB = 8.0 Vdc, IC = 0

10

6 Lake Street, Lawrence, MA 01841

120101

1-800-446-1158 / [phone] / Fax: [phone]

Page 1 of 2