Microsemi Corporation SG2003L, SG2003N, SG2004J, SG2004L, SG2011J Datasheet

						SG2000 SERIES
			HIGH VOLTAGE MEDIUM
			CURRENT DRIVER ARRAYS
DESCRIPTION		FEATURES
The SG2000 series integrates seven NPN Darlington pairs with		∙	Seven npn Darlington pairs
internal suppression diodes to drive lamps, relays, and solenoids in		∙	-55°C to 125°C ambient operating temperature range
many military, aerospace, and industrial applications that require		∙	Collector currents to 600mA
severe environments. All units feature open collector outputs with		∙	Output voltages from 50V to 95V
greater than 50V breakdown voltages combined with 500mA		∙	Internal clamping diodes for inductive loads
current carrying capabilities. Five different input configurations		∙	DTL, TTL, PMOS, or CMOS compatible inputs
provide optimized designs for interfacing with DTL, TTL, PMOS, or		∙	Hermetic ceramic package
CMOS drive signals. These devices are designed to operate from
-55°C to 125°C ambient temperature in a 16 pin dual in line ceramic		HIGH RELIABILITY FEATURES
(J) package and 20 pin Leadless Chip Carrier (LCC). The plastic		♦ Available to MIL-STD-883 and DESC SMD
dual in–line (N) is designed to operate over the commercial
temperature range of 0°C to 70°C.		♦ MIL-M38510/14101BEA - JAN2001J
		♦ MIL-M38510/14102BEA - JAN2002J
		♦ MIL-M38510/14103BEA - JAN2003J
		♦ MIL-M38510/14104BEA - JAN2004J
		♦ Radiation data available
		♦ LMI level "S" processing available
PARTIAL SCHEMATICS

4/90 Rev 1.3 6/97

LINFINITY Microelectronics Inc.

Copyright ã 1997	11861 Western Avenue ∞ Garden Grove, CA 92841
1	[phone] ∞ FAX: [phone]

SG2000 SERIES

ABSOLUTE MAXIMUM RATINGS (Note 1)

Output Voltage, VCE

50V

Peak Collector Current, IC

500mA

(SG2000, 2010 series) ................................................

(SG2000, 2020) ......................................................

(SG2020 series) ..........................................................

95V

(SG2010)

................................................................

600mA

Input Voltage, VIN

Operating Junction Temperature

150°C

(SG2002,3,4) ...............................................................

30V

Hermetic (J, L Packages) .........................................

Continuous Input Current, IIN ........................................

25mA

Plastic (N,

Packages)

...............................................

150°C

Storage Temperature Range ..........................

-65°C to 150°C

Note 1. Values beyond which damage may occur.

Lead Temperature (Soldering 10 sec.) .........................

300°C

THERMAL DATA

J Package:

Note A. Junction Temperature Calculation: TJ = TA + (PD x θJA).

Thermal Resistance-Junction to Case, θJC ..................

30°C/W

Junction to Ambient

, θJA

Note B. The above numbers forθJC are maximums for the limiting thermal

Thermal Resistance-

80°C/W

resistance of the package in a standard mounting configuration.

N Package:

The θJA numbers are meant to be guidelines for the thermal

Thermal Resistance-Junction to Case, θJC ..................

40°C/W

Thermal Resistance-Junction to Ambient, θJA

65°C/W

performance of the device/pc-board system. All of the above

assume no ambient airflow.

L Package:

Thermal Resistance-Junction to Case, θJC ..................

35°C/W

Thermal Resistance-Junction to Ambient, θJA ............

120°C/W

RECOMMENDED OPERATING CONDITIONS (Note 2)

Output Voltage, VCE

50V

Peak Collector Current, IC

50mA

SG2000, SG2010 series ..............................................

SG2000, SG2020 series ...........................................

SG2020 series .............................................................

95V

SG2010 series ........................................................

500mA

Operating Ambient Temperature Range

-55°C to 125°C

SG2000 Series - Hermetic ..........................

Note 2. Range over which the device is functional.

SG2000 Series - Plastic ..................................

0°C to 70°C

SELECTION GUIDE

Device

VCE Max

IC Max

Logic Inputs

Device

V CE Max

IC Max

Logic Inputs

SG2001

50V

500mA

General Purpose

SG2013

50V

600mA

5V TTL, CMOS

PMOS, CMOS

SG2014

50V

600mA

6V-15V CMOS, PMOS

SG2002

50V

500mA

14V-25V PMOS

SG2015

50V

600mA

High Output TTL

SG2003

50V

500mA

5V TTL, CMOS

SG2021

95V

500mA

General Purpose

SG2004

50V

500mA

6V-15V CMOS, PMOS

PMOS, CMOS

SG2011

50V

600mA

General Purpose

SG2023

95V

500mA

5V TTL, CMOS

PMOS, CMOS

SG2024

95V

500mA

6V-15V CMOS, PMOS

SG2012

50V

600mA

14V-25V PMOS

4/90 Rev 1.3

6/97

LINFINITY

Microelectronics Inc.

Copyright ã 1997	11861 Western Avenue ∞ Garden Grove, CA 92841
2	[phone] ∞ FAX: [phone]

SG2000 SERIES

ELECTRICAL CHARACTERISTICS

(Unless otherwise specified, these specifications apply over the operating ambient temperatures for SG2000 series - Hermetic - with -55°C ≤ TA ≤ 125°C and SG2000 series - Plastic - with 0°C≤ TA ≤ 70°C. Low duty cycle pulse testing techniques are used which maintains junction and case temperatures equal to the ambient temperature.)

SG2001 thru SG2004

Parameter		Applicable	Temp.		Test Conditions		Limits		Units
		Devices				Min.	Typ.	Max.
Output Leakage Current	(ICEX)	All		VCE = 50V				100	μA
		SG2002		VCE = 50V, VIN = 6V				500	μA
		SG2004		VCE = 50V, VIN = 1V				500	μA
Collector - Emitter (VCE(SAT))		All	TA = TMIN	IC = 350mA, IB = 850μA			1.6	1.8	V
			TA = TMIN	IC = 200mA, IB = 550μA			1.3	1.5	V
			TA = TMIN	IC = 100mA, IB = 350μA			1.1	1.3	V
			TA = 25°C	IC = 350mA, IB = 500μA			1.25	1.6	V
			TA = 25°C	IC = 200mA, IB = 350μA			1.1	1.3	V
			TA = 25°C	IC = 100mA, IB = 250μA			0.9	1.1	V
			TA = TMAX	IC = 350mA, IB = 500μA			1.6	1.8	V
			TA = TMAX	IC = 200mA, IB = 350μA			1.3	1.5	V
			TA = TMAX	IC = 100mA, IB = 250μA			1.1	1.3	V
Input Current (IIN(ON))		SG2002		VIN = 17V		480	850	1300	μA
		SG2003		VIN	= 3.85V	650	930	1350	μA
		SG2004		VIN	= 5V	240	350	500	μA
				VIN	= 12V	650	1000	1450	μA
(IIN(OFF))		All	TA = TMAX	IC = 500μA		25	50		μA
Input Voltage (VIN(ON))		SG2002	TA = TMIN	VCE = 2V, IC = 300mA				18	V
			TA = TMAX	VCE = 2V, IC = 300mA				13	V
		SG2003	TA = TMIN	VCE = 2V, IC = 200mA				3.3	V
			TA = TMIN	VCE = 2V, IC = 250mA				3.6	V
			TA = TMIN	VCE = 2V, IC = 300mA				3.9	V
			TA = TMAX	VCE = 2V, IC = 200mA				2.4	V
			TA = TMAX	VCE = 2V, IC = 250mA				2.7	V
			TA = TMAX	VCE = 2V, IC = 300mA				3.0	V
		SG2004	TA = TMIN	VCE = 2V, IC = 125mA				6.0	V
			TA = TMIN	VCE = 2V, IC = 200mA				8.0	V
			TA = TMIN	VCE = 2V, IC = 275mA				10	V
			TA = TMIN	VCE = 2V, IC = 350mA				12	V
			TA = TMAX	VCE = 2V, IC = 125mA				5.0	V
			TA = TMAX	VCE = 2V, IC = 200mA				6.0	V
			TA = TMAX	VCE = 2V, IC = 275mA				7.0	V
			TA = TMAX	VCE = 2V, IC = 350mA				8.0	V
D-C Forward Current		SG2001	TA = TMIN	VCE = 2V, IC = 350mA		500
Transfer Ratio (hFE)			TA = 25°C	VCE = 2V, IC = 350mA		1000
Input Capacitance (CIN)	(Note 3)	All	TA = 25°C				15	25	pF
Turn-On Delay (TPLH)		All	TA = 25°C	0.5 EIN to 0.5 EOUT			250	1000	ns
Turn-Off Delay (TPHL)		All	TA = 25°C	0.5 EIN to 0.5 EOUT			250	1000	ns
Clamp Diode Leakage Current (IR)		All		VR = 50V				50	μA
Clamp Diode Forward Voltage (VF)		All		IF = 350mA			1.7	2.0	V

Note 3. These parameters, although guaranteed, are not tested in production.

4/90 Rev 1.3 6/97

LINFINITY Microelectronics Inc.

Copyright ã 1997	11861 Western Avenue ∞ Garden Grove, CA 92841
3	[phone] ∞ FAX: [phone]