HIT 2SK3140 Datasheet
2SK3140
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R
= 6 mΩ typ.
DS(on)
• Low drive current
• 4 V gate drive device can be driven from 5 V source
Outline
ADE-208-767C (Z)
4th. Edition
February 1999
TO–220CFM
G
D
1
2
3
S
1. Gate
2. Drain
3. Source
2SK3140
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Avalanche current IAP
Avalanche energy EAR
Channel dissipation Pch
DSS
GSS
D
D(pulse)
DR
Note 3
Note 3
Note 2
Note 1
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
60 V
±20 V
60 A
240 A
60 A
50 A
214 mJ
35 W
2
2SK3140
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
V
(BR)DSS
60——VI
voltage
Gate to source leak current I
Zero gate voltege drain
GSS
I
DSS
——±0.1 µAVGS = ±20 V, VDS = 0
——10µAVDS = 60 V, VGS = 0
current
Gate to source cutoff voltage V
Static drain to source on state R
GS(off)
DS(on)
1.0 — 2.5 V ID = 1 mA, VDS = 10 V
— 6.0 7.5 mΩ ID = 30 A, VGS = 10 V
resistance — 8.0 12 mΩ ID = 30 A, VGS = 4 V
Forward transfer admittance |yfs|4575—SI
Input capacitance Ciss — 7100 — pF VDS = 10 V
Output capacitance Coss — 1000 — pF VGS = 0
Reverse transfer capacitance Crss — 280 — pF f = 1 MHz
Total gate charge Qg — 125 — nc VDD = 25 V
Gate to source charge Qgs — 25 — nc VGS = 10 V
Gate to drain charge Qgd — 25 — nc ID = 60 A
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward
V
d(on)
r
d(off)
f
DF
— 60 — ns VGS = 10 V, ID = 30 A
— 250 — ns RL = 1Ω
— 540 — ns
— 320 — ns
— 1.0 — V IF = 60 A, VGS = 0
voltage
Body–drain diode reverse
t
rr
— 80 — ns IF = 60 A, VGS = 0
recovery time
Note: 1. Pulse test
= 10 mA, VGS = 0
D
= 30 A, VDS = 10 V
D
diF/ dt = 50 A/ µs
Note 1
Note 1
Note 1
Note 1
3
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