HIT 2SK3135-S, 2SK3135-L Datasheet
2SK3135(L),2SK3135(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-695B (Z)
3rd. Edition
February 1999
Features
• Low on-resistance
R
DS(on)
= 6 mΩ typ.
• Low drive current
• 4 V gate drive device can be driven from 5 V source
Outline
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
4
1
2
3
4
LDPAK
1
2
3
2SK3135(L),2SK3135(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
DSS
60 V
Gate to source voltage V
GSS
±20 V
Drain current I
D
75 A
Drain peak current I
D(pulse)
Note 1
300 A
Body-drain diode reverse drain current I
DR
75 A
Avalanche current IAP
Note 3
50 A
Avalanche energy EAR
Note 3
214 mJ
Channel dissipation Pch
Note 2
100 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
2SK3135(L),2SK3135(S)
3
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
(BR)DSS
60——V I
D
= 10 mA, VGS = 0
Gate to source leak current I
GSS
——±0.1 µAVGS = ±20 V, VDS = 0
Zero gate voltege drain current I
DSS
——10µAVDS = 60 V, VGS = 0
Gate to source cutoff voltage V
GS(off)
1.0 — 2.5 V ID = 1 mA, VDS = 10 V
Note 1
Static drain to source on state R
DS(on)
— 6.0 7.5 mΩ ID = 30 A, VGS = 10 V
Note 1
resistance — 8.0 12 mΩ ID = 30 A, VGS = 4 V
Note 1
Forward transfer admittance |yfs|5080—S I
D
= 30 A, VDS = 10 V
Note 1
Input capacitance Ciss — 7100 — pF VDS = 10 V
Output capacitance Coss — 1000 — pF VGS = 0
Reverse transfer capacitance Crss — 300 — pF f = 1 MHz
Total gate charge Qg — 125 — nc VDD = 25 V
Gate to source charge Qgs — 25 — nc VGS = 10 V
Gate to drain charge Qgd — 25 — nc ID = 75 A
Turn-on delay time t
d(on)
— 60 — ns VGS = 10 V, ID = 40 A
Rise time t
r
— 300 — ns RL = 0.75 Ω
Turn-off delay time t
d(off)
— 520 — ns
Fall time t
f
— 330 — ns
Body–drain diode forward voltage V
DF
— 1.05 — V IF = 75 A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
— 90 — ns IF = 75 A, VGS = 0
diF/ dt = 50 A/ µs
Note: 1. Pulse test
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