Fairchild Semiconductor BD536, BD534, BD538 Datasheet
BD534/536/538
Medium Power Linear and Switching
Applications
• Low Saturation Voltage
• Complement to BD533, BD535 and BD537 respectively
BD534/536/538
1
TO-220
1.Base 2.Collector 3.Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
VCEO
VEBO
I
C
I
B
P
C
T
J
T
STG
Collector-Base Voltage : BD534
Collector-Emitter Voltage : BD534
Emitter-Base Voltage - 5 V
Collector Current (DC) - 8 A
Base Current - 1 A
Collector Dissipation (TC=25°C) 50 W
Junction Temperature 150 °C
Storage T emperature - 65 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
ICES
IEBO
hFE
hFE
V
CE
V
BE
f
T
* Pulse Test: PW =300µs, duty Cycle =1.5% Pulsed
Collector Cut-off Current : BD534
Collector Cut-off Current : BD534
Emitter Cut-off Cu rr en t V
* DC Current Gain : ALL DEVICE
: BD534/536
: BD538
: BD534/536
: BD538
h
Groups
FE
J : ALL DEVICE
K : ALL DEVICE
(sat) * Collector-Emitter Saturation Voltage IC = - 2A, IB = - 0.2A
(on) * Base-Emitter ON Voltage V
Current Gain Bandwidth Product V
TC=25°C unless otherwise noted
: BD536
: BD538
: BD536
: BD538
TC=25°C unless otherwise noted
V
= - 45V, IE = 0
: BD536
: BD538
: BD536
: BD538
CB
V
= - 60V, IE = 0
CB
= - 80V, IE = 0
V
CB
V
= - 45V, V
CE
= - 60V, V
V
CE
V
= - 80V, V
CE
= - 5V, IC = 0 - 1 mA
EB
V
= -2 V, IC = - 500mA
CE
= - 5V, IC = - 10mA
V
CE
V
= - 2V, IC = - 2A
CE
= - 2V, IC = - 2A
V
CE
V
= - 2V, IC = - 3A
CE
= -2V, IC = - 2A
V
CE
= - 2V, IC = - 3A
V
CE
I
= - 6A, IB = - 0.6A - 0.8
C
= - 2V, IC = - 2A - 1.5 V
CE
= - 1V, IC = - 500mA 3 12 MHz
CE
BE
BE
BE
= 0
= 0
= 0
40
20
15
25
15
30
15
40
20
- 45
- 60
- 80
- 45
- 60
- 80
V
V
V
V
V
V
- 100
- 100
- 100
- 100
- 100
- 100
75
100
- 0.8 V
µA
µA
µA
µA
µA
µA
V
©2000 Fairchild Semiconductor International Rev. A, February 2000
Typical Characteristics
BD534/536/538
1000
VCE = -2V
100
, DC CURRENT GAIN
FE
h
10
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
10ms
DC
1ms
BD534
BD536
BD538
10
µ
s
100µs
-100
IC(max)
-10
-1
[A], COLLECTOR CURRENT
C
I
-0.1
-1 -10 -100 -1000
VCE[V], COLLECTOR-EMITTER V OLT AGE
IC = 10 I
-1
VBE(sat)
-0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat)[V], V
BE
-0.01
V
-0.1 -1 -10
VCE(sat)
B
IC[A], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
80
70
60
50
40
30
20
[W], POWER DISSIPATION
C
P
10
0
0 25 50 75 100 125 150 175 200
TC[oC], CASE TEMPERATURE
Figure 3. Safe Operating Area Figure 4. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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