Fairchild Semiconductor BD440, BD442 Datasheet
BD440/442
Medium Power Linear and Switching
Applications
• Complement to BD439, BD441 respectively
BD440/442
TO-126
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
TC=25°C unless otherwise noted
1
1. Emitter 2.Collector 3.Base
Symbol Parameter Value Units
V
CBO
V
CES
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Electrical Characteristics
Collector-Base Voltage
: BD440
: BD442
- 60
- 80
Collector-Emitter Voltage
: BD440
: BD442
- 60
- 80
Collector-Emitter Voltage
: BD440
: BD442
- 60
- 80
Emitter-Base Voltage - 5 V
Collector Current (DC) - 4 A
*Collector Current (Pulse) - 7 A
Base Current - 1 A
Collector Dissipation (TC=25°C) 36 W
Junction Temperature 150 °C
Storage Temperature - 65 ~ 1 50 °C
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Mi n. Ty p. Max. Units
V
(sus) Collector-Emitter Sustaining Voltage
CEO
: BD440
: BD442
I
CBO
Collector Cut-off Current : BD440
: BD442
I
CES
Collector Cut-off Current : BD440
: BD442
I
h
EBO
FE
Emitter Cut-off Current V
* DC Current Gain : BD440
: BD442
: BD440
: BD442
: BD440
: BD442
(sat) * Collector-Emitter Saturation Voltage IC = - 2A, IB = - 0.2A - 0.8 V
V
CE
(on) * Base-Emitter ON Volt age V
V
BE
f
T
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
Current Gain Bandwidth Product V
= - 100mA, IB = 0 -60
I
C
V
= - 60V, IE = 0
CB
V
= - 80V, IE = 0
CB
V
= - 60V, V
CE
= - 80V, V
V
CE
= - 5V , IC = 0 - 1 mA
EB
V
= - 5V, IC = - 10mA
CE
V
= - 1V, IC = - 500mA
CE
= - 1V, IC = - 2A
V
CE
BE
BE
= 0
= 0
-80
20
15
40
40
25
- 100
- 100
- 100
- 100
140
140
140
140
15
= - 5V, IC = - 10mA
CE
= -1 V, IC = - 2A
V
CE
= - 1V, IC = - 250mA 3 MHz
CE
-0.58
- 1.5VV
V
V
V
V
V
V
V
V
µA
µA
µA
µA
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
Typical Characteristics
BD440/442
1000
100
10
, DC CURRENT GAIN
FE
h
1
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
VCE = -1V
-5.0
-4.5
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
[A], COLLECTOR CURRENT
C
I
-0.5
-0.0
-0.0 -0.3 -0.5 -0.8 -1.0 -1.3 -1.5 -1.8 -2.0
VBE[V], BASE-EMITTER VOLTAGE
VCE = -1V
-1
-0.1
(sat)[V], SATURATION VOLTAGE
CE
V
-0.01
-0.1 -1 -10
IC = 10 I
B
IC[A], COLLECTOR CURRENT
1000
100
10
(pF), COLLECTOR BASE CAPACITANCE
CBO
1
C
-0.1 -1 -10 -100
VCB[V], COLLECTOR BASE VOLTAGE
Figure 3. Base-Emitter On Voltage Figure 4. Collector-Base Capacitance
-10
IC MAX. (Pulsed)
IC Max. (Continuous)
-1
[A], COLLECTOR CURRENT
C
I
-0.1
-1 -10 -100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2001 Fairchild Semiconductor Corporation
10ms
100
1ms
DC
BD440
BD442
1µs
µ
s
10µs
48
42
36
30
24
18
12
[W], POWER DISSIPATION
C
P
6
0
0 25 50 7 5 100 125 150 175 200
TC[oC], CASE TEMPERATURE
Rev. A1, June 2001
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