BD434/436/438
Medium Power Linear and Switching
Applications
• Complement to BD433, BD435 and BD437 respectively
BD434/436/438
1
1. Emitter 2.Collector 3.Base
TO-126
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CES
VCEO
VEBO
IC
ICP
IB
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage - 5 V
Collector Current (DC) - 4 A
*Collector Current (Pulse) - 7 A
Base Current - 1 A
Collector Dissipation (TC=25°C) 36 W
Junction Temperature 150 °C
Storage Temperature - 65 ~ 150 °C
TC=25°C unless otherwise noted
: BD434
: BD436
: BD438
: BD434
: BD436
: BD438
: BD434
: BD436
: BD438
- 22
- 32
- 45
- 22
- 32
- 45
- 22
- 32
- 45
V
V
V
V
V
V
V
V
V
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
BD434/436/438
Electrical Characteristics T
=25°C unless otherwise noted
C
Symbol Parameter Test Condition Min. Typ. Max. Units
V
(sus) Collector-Emitter Sustaining Voltage
CEO
I
I
I
h
CBO
CEO
EBO
FE
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off C u rr e nt V
* DC Current Gain
: BD434/436
: BD438
: ALL DEVICE
: BD434/436
: BD438
(sat) * Collector-Emitter Saturation Voltage
V
CE
(on) * Base-Emitter ON Voltage
V
BE
f
T
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
Current Gain Bandwidth Product V
: BD434
: BD436
: BD438
: BD434
: BD436
: BD438
: BD434
: BD436
: BD438
: BD434
: BD436
: BD438
: BD434
: BD436
: BD438
= - 100mA, IB = 0 - 22
I
C
- 32
- 45
V
= - 22V, IE = 0
CB
= - 32V, IE = 0
V
CB
V
= - 45V, IE = 0
CB
- 100
- 100
- 100
= - 22V, V
V
CE
V
= - 32V, V
CE
= - 45V, V
V
CE
= - 5V , IC = 0 - 1 mA
EB
= - 5V , IC = - 10mA
V
CE
V
= - 1V , IC = - 500mA
CE
= - 1V , IC = - 2A
V
CE
BE
BE
BE
= 0
= 0
= 0
40
30
85
50
- 100
- 100
- 100
140
140
140
40
= - 2A, IB = - 0.2A - 0.2
I
C
= - 1V , IC = - 2A - 1.1
V
CE
- 0.2
- 0.2
- 0.5
- 0.5
- 0.6
- 1.1
- 1.2
= - 1V , IC = - 250mA 3 MHz
CE
V
V
V
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001