Fairchild Semiconductor BD437, BD435, BD433 Datasheet
BD433/435/437
Medium Power Linear and Switching
Applications
• Complement to BD434, BD436 and BD438 respectively
BD433/435/437
1
1. Emitter 2.Collector 3.Base
TO-126
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CES
VCEO
VEBO
IC
ICP
IB
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage 5 V
Collector Current (DC) 4 A
*Collector Current (Pulse) 7 A
Base Current 1 A
Collector Dissipation (TC=25°C) 36 W
Junction Temperature 150 °C
Storage Temperature - 65 ~ 150 °C
TC=25°C unless otherwise noted
: BD433
: BD435
: BD437
: BD433
: BD435
: BD437
: BD433
: BD435
: BD437
22
32
45
22
32
45
22
32
45
V
V
V
V
V
V
V
V
V
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
BD433/435/437
Electrical Characteristics T
=25°C unless otherwise noted
C
Symbol Parameter Test Condition Min. Typ. Max. Units
V
(sus) Collector-Emitter Sustaining Voltage
CEO
I
I
I
h
CBO
CEO
EBO
FE
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current V
* DC Current Gain
: BD433/435
: BD437
: ALL DEVICE
: BD433/435
: BD437
(sat) * Collector-Emitter Saturation Voltage
V
CE
(on) * Base-Emitter ON Voltage
V
BE
f
T
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
Current Gain Bandwidth Product V
: BD433
: BD435
: BD437
: BD433
: BD435
: BD437
: BD433
: BD435
: BD437
: BD433
: BD435
: BD437
: BD433
: BD435
: BD437
= 100mA, IB = 0 22
I
C
32
45
= 22V , IE = 0
V
CB
V
= 32V , IE = 0
CB
= 45V , IE = 0
V
CB
= 22V , V
V
CE
V
= 32V , V
CE
= 45V , V
V
CE
= 5V, IC = 0 1 mA
EB
BE
BE
BE
= 0
= 0
= 0
100
100
100
100
100
100
40
30
85
50
130
130
140
= 5V , IC = 10mA
V
CE
V
= 1V, IC = 500mA
CE
= 1V, IC = 2A
V
CE
40
= 2A, IB = 0.2A 0.2
I
C
= 1V, IC = 2A 1.1
V
CE
0.2
0.2
0.5
0.5
0.6
1.1
1.2
= 1V, IC = 250mA 3 MHz
CE
V
V
V
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
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