EIC BR810, BR808, BR806, BR804, BR802 Datasheet

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EIC BR810, BR808, BR806, BR804, BR802 Datasheet

BR800 - BR810

SILICON BRIDGE RECTIFIERS

PRV : 50 - 1000 Volts

Io : 8.0 Amperes

FEATURES :

*High current capability

*High surge current capability

*High reliability

*Low reverse current

*Low forward voltage drop

*Ideal for printed circuit board

MECHANICAL DATA :

*Case : Reliable low cost construction utilizing molded plastic technique

*Epoxy : UL94V-O rate flame retardant

*Lead : Axial lead solderable per

MIL - STD 202 , Method 208 guaranteed

*Polarity : Polarity symbols marked on case

*Mounting position : Any

*Weight : 6.1 grams

 

BR10

 

0.520 (13.20)

 

 

0.158 (4.00)

 

0.480 (12.20)

 

 

 

 

 

 

 

AC

 

 

 

 

 

0.142 (3.60)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.77 (19.56)

0.73 (18.54)

0.290 (7.36)

0.210 (5.33)

AC

0.052 (1.32)

0.048 (1.22)

0.75 (19.1) Min.

0.30 (7.62)

0.25 (6.35)

Dimensions in inches and ( millimeters )

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 °C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

RATING

 

SYMBOL

BR800

BR801

BR802

BR804

BR806

BR808

BR810

UNIT

 

 

 

 

 

 

 

 

 

 

 

 

Maximum Recurrent Peak Reverse Voltage

VRRM

50

100

200

 

400

 

600

800

1000

Volts

Maximum RMS Voltage

 

VRMS

35

70

140

 

280

 

420

560

700

Volts

Maximum DC Blocking Voltage

 

VDC

50

100

200

 

400

 

600

800

1000

Volts

Maximum Average Forward Current Tc=50°C

IF(AV)

 

 

 

8.0

 

 

 

 

Amps.

Peak Forward Surge Current Single half sine wave

 

 

 

 

 

 

 

 

 

 

 

Superimposed on rated load (JEDEC Method)

IFSM

 

 

 

300

 

 

 

 

Amps.

Current Squared Time at t < 8.3 ms.

I2t

 

 

 

160

 

 

 

 

A2S

Maximum Forward Voltage per Diode at IF = 4.0 Amp.

VF

 

 

 

1.0

 

 

 

 

Volts

Maximum DC Reverse Current

Ta = 25 °C

IR

 

 

 

10

 

 

 

 

μA

at Rated DC Blocking Voltage

Ta = 100 °C

IR(H)

 

 

 

200

 

 

 

 

μA

Typical Thermal Resistance (Note 1)

RθJC

 

 

 

2.5

 

 

 

 

°C/W

Operating Junction Temperature Range

TJ

 

 

 

- 40 to + 150

 

 

 

°C

Storage Temperature Range

 

TSTG

 

 

 

- 40 to + 150

 

 

 

°C

 

 

 

 

 

 

 

 

 

 

 

 

 

Notes :

1. Thermal Resistance from junction to case with units mounted on a 3.2" x 3.2" x 0.12" THK

(8.2cm.x 8.2cm.x 0.3cm.) Al. Plate. heatsink.

UPDATE : APRIL 23, 1998

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