EIC BR5004, BR5002, BR5001, BR5000, BR5010 Datasheet
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ELECTRONICS INDUSTRY (USA) CO., LTD.
103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com
BR5000 - BR5010
PRV : 50 - 1000 Volts
Io : 50 Amperes
FEATURES :
*High case dielectric strength
*High surge current capability
*High reliability
*High efficiency
*Low reverse current
*Low forward voltage drop
MECHANICAL DATA :
*Case : Molded plastic with heatsink integrally mounted in the bridge encapsulation
*Epoxy : UL94V-O rate flame retardant
*Terminals : plated .25" (6.35 mm). Faston
*Polarity : Polarity symbols marked on case
*Mounting position : Bolt down on heat-sink with silicone thermal compound between bridge and mounting surface for maximum heat transfer efficiency.
*Weight : 17.1 grams
SILICON BRIDGE RECTIFIERS
BR50
0.728(18.50)
0.688(17.40)
0.570(14.50) |
0.685(16.70) |
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0.530(13.40) |
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0.618(15.70) |
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0.210(5.30) |
0.658(16.70) |
0.200(5.10) |
0.618(15.70) |
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0.032(0.81) |
0.252(6.40) |
0.028(0.71) |
0.248(6.30) |
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φ |
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0.905(23.0) |
0.310(7.87) |
0.826(21.0) |
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0.280(7.11) |
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Metal Heatsink
Dimensions in inches and ( millimeters )
1.130(28.70)
1.120(28.40)
0.100(2.50)
0.090(2.30)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
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RATING |
SYMBOL |
BR5000 |
BR5001 |
BR5002 |
BR5004 |
BR5006 |
BR5008 |
BR5010 |
UNIT |
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Maximum Recurrent Peak Reverse Voltage |
VRRM |
50 |
100 |
200 |
400 |
600 |
800 |
1000 |
Volts |
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Maximum RMS Voltage |
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VRMS |
35 |
70 |
140 |
280 |
420 |
560 |
700 |
Volts |
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Maximum DC Blocking Voltage |
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VDC |
50 |
100 |
200 |
400 |
600 |
800 |
1000 |
Volts |
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Maximum Average Forward Current Tc = 55°C |
IF(AV) |
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50 |
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Amps. |
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Peak Forward Surge Current Single half sine wave |
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Superimposed on rated load (JEDEC Method) |
IFSM |
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500 |
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Amps. |
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Current Squared Time at t < 8.3 ms. |
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I2t |
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660 |
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A2S |
Maximum Forward Voltage per Diode at IF=25 Amp. |
VF |
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1.1 |
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Volts |
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Maximum DC Reverse Current |
Ta = 25 °C |
IR |
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10 |
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μA |
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at Rated DC Blocking Voltage |
Ta = 100 °C |
IR(H) |
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200 |
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μA |
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Typical Thermal Resistance (Note 1) |
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R JC |
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1.0 |
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C/W |
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θ |
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° |
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Operating Junction Temperature Range |
TJ |
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- 40 to + 150 |
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°C |
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Storage Temperature Range |
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TSTG |
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- 40 to + 150 |
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°C |
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Notes :
1 ) Thermal resistance from Junction to Case with units mounted on a 9"x5"x4.6" (22.9x12.7x11.7 cm) Al-Finned Heatsink.
UPDATE : JUNE 2, 1999
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