EIC BZX55C75, BZX55C6V8, BZX55C62, BZX55C5V6, BZX55C51 Datasheet
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BZX55C2V4 ~ BZX55C200 |
SILICON ZENER DIODES |
VZ : 2.4 - 200 Volts
PD : 500 mW
FEATURES :
*Complete 2.4 to 200 Volts
*High surge current capability
*High peak reverse power dissipation
*High reliability
*Low leakage current
MECHANICAL DATA
DO - 35
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0.079(2.0 )max. |
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1.00 (25.4) |
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min. |
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0.150 (3.8) max.
0.020 (0.52)max.
1.00 (25.4) min.
Dimensions in inches and ( millimeters )
*Case : Molded glass
*Lead : Axial lead solderable per MIL-STD-202, method 208 guaranteed
*Polarity : Color band denotes cathode end. When operated in zener mode,
cathode will be positive with respect to anode
*Mounting position : Any
*Weight : 0.13 gram
MAXIMUM RATINGS
Rating at 25 ° C ambient temperature unless otherwise specified
Rating |
Symbol |
Value |
Unit |
Power Dissipation (Note) |
PD |
500 |
mW |
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Maximum Forward Voltage at IF =100 mA |
VF |
1.0 |
V |
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Maximum Thermal Resistance Junction to Ambient Air (Note1) |
RθJA |
0.3 |
K / mW |
Junction Temperature Range |
Tj |
- 55 to + 175 |
°C |
Storage Temperature Range |
Ts |
- 55 to + 175 |
°C |
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Note : 1. Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case.
UPDATE : JANUARY 18, 2002
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