EIC ABR3510, ABR3508, ABR3506, ABR3504, ABR3501 Datasheet
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ABR3500 - ABR3510
PRV : 50 - 1000 Volts
Io : 35 Amperes
FEATURES :
*High case dielectric strength
*High surge current capability
*High reliability
*Low reverse current
*Low forward voltage drop
*ldeal for printed circuit board
MECHANICAL DATA :
*Case : Molded plastic with heatsink integrally mounted in the bridge encapsulation
*Epoxy : UL94V-O rate flame retardant
*Terminals : plated .25" (6.35 mm). Faston
*Polarity : Polarity symbols marked on case
*Mounting position : Bolt down on heat-sink with silicone thermal compound between bridge and mounting surface for maximum heat transfer efficiency.
*Weight : 17.1 grams
AVALANCHE BRIDGE
RECTIFIERS
|
BR50 |
|
0.728(18.50) |
|
0.688(17.40) |
0.570(14.50) |
0.685(16.70) 1.130(28.70) |
0.530(13.40) |
0.618(15.70) 1.120(28.40) |
|
0.210(5.30) |
0.658(16.70) |
0.200(5.10) |
0.618(15.70) |
|
0.032(0.81) |
0.252(6.40) |
0.028(0.71) |
0.248(6.30) |
|
φ 0.100(2.50) |
|
0.090(2.30) |
|
0.905(23.0) |
0.310(7.87) |
0.826(21.0) |
|
|
0.280(7.11) |
|
Metal Heatsink
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING |
SYMBOL |
ABR |
ABR |
ABR |
ABR |
ABR |
ABR |
ABR |
UNIT |
|
|
|
|
3500 |
3501 |
3502 |
3504 |
3506 |
3508 |
3510 |
|
Maximum Recurrent Peak Reverse Voltage |
VRRM |
50 |
100 |
200 |
400 |
600 |
800 |
1000 |
Volts |
|
Maximum RMS Voltage |
|
VRMS |
35 |
70 |
140 |
280 |
420 |
560 |
700 |
Volts |
Maximum DC Blocking Voltage |
VDC |
50 |
100 |
200 |
400 |
600 |
800 |
1000 |
Volts |
|
Minimum Avalanche Breakdown Voltage at 100 μA |
VBO(min.) |
100 |
150 |
250 |
450 |
700 |
900 |
1100 |
Volts |
|
Maximum Avalanche Breakdown Voltage at 100 μA |
VBO(max.) |
550 |
600 |
700 |
900 |
1150 |
1350 |
1550 |
Volts |
|
Maximum Average Forward Current Tc = 50°C |
IF(AV) |
|
|
|
35 |
|
|
|
Amps. |
|
Peak Forward Surge Current Single half sine wave |
|
|
|
|
|
|
|
|
|
|
Superimposed on rated load (JEDEC Method) |
IFSM |
|
|
|
400 |
|
|
|
Amps. |
|
Rating for fusing at ( t < 8.3 ms. ) |
I2t |
|
|
|
660 |
|
|
|
A2S |
|
Maximum Forward Voltage per Diode at IF = 17.5 Amps. |
VF |
|
|
|
1.1 |
|
|
|
Volts |
|
Maximum DC Reverse Current |
Ta = 25 °C |
IR |
|
|
|
10 |
|
|
|
μA |
at Rated DC Blocking Voltage |
Ta = 100 °C |
IR(H) |
|
|
|
200 |
|
|
|
μA |
Typical Thermal Resistance |
(Note 1) |
RθJC |
|
|
|
1.5 |
|
|
|
°C/W |
Operating Junction Temperature Range |
TJ |
|
|
- 40 to + 150 |
|
|
°C |
|||
Storage Temperature Range |
|
TSTG |
|
|
- 40 to + 150 |
|
|
°C |
||
|
|
|
|
|
|
|
|
|
|
|
Notes : 1 ) Thermal resistance from junction to case with units mounted on a 7.5" x 3.5" x 4.6" ( 19 x 9 x 11.8 cm )Al. plate.
UPDATE : APRIL 21, 1998
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