EIC 1N5408G, 1N5407G, 1N5406G, 1N5404G, 1N5402G Datasheet

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EIC 1N5408G, 1N5407G, 1N5406G, 1N5404G, 1N5402G Datasheet

1N5400G - 1N5408G

PRV : 50 - 1000 Volts

Io : 3.0 Amperes

FEATURES :

*Glass passivated chip

*High current capability

*High reliability

*Low reverse current

*Low forward voltage drop

MECHANICAL DATA :

*Case : DO-201AD Molded plastic

*Epoxy : UL94V-O rate flame retardant

*Lead : Axial lead solderable per MIL-STD-202,

Method 208 guaranteed

*Polarity : Color band denotes cathode end

*Mounting position : Any

*Weight : 1.21 grams

GLASS PASSIVATED JUNCTION

SILICON RECTIFIERS

DO - 201AD

0.21 (5.33)

1.00 (25.4)

0.19 (4.83)

MIN.

0.375 (9.53)

0.285 (7.24)

1.00 (25.4)

0.052 (1.32) MIN.

0.048 (1.22)

Dimensions in inches and ( millimeters )

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 °C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

RATING

 

SYMBOL

1N5400G

1N5401G

1N5402G

1N5404G

1N5406G

1N5407G

1N5408G

UNIT

 

 

 

 

 

 

 

 

 

 

 

 

Maximum Repetitive Peak Reverse Voltage

VRRM

50

100

200

 

400

 

600

800

1000

Volts

 

 

 

 

 

 

 

 

 

 

 

 

 

Maximum RMS Voltage

 

VRMS

35

70

140

 

280

 

420

560

700

Volts

 

 

 

 

 

 

 

 

 

 

 

 

 

Maximum DC Blocking Voltage

 

VDC

50

100

200

 

400

 

600

800

1000

Volts

 

 

 

 

 

 

 

 

 

 

 

 

Maximum Average Forward Current

 

 

 

 

 

 

 

 

 

 

 

0.375"(9.5mm) Lead Length Ta = 75 °C

IF(AV)

 

 

 

3.0

 

 

 

 

Amps.

Peak Forward Surge Current

 

 

 

 

 

 

 

 

 

 

 

 

8.3ms Single half sine wave Superimposed

 

 

 

 

 

 

 

 

 

 

 

on rated load (JEDEC Method)

 

IFSM

 

 

 

150

 

 

 

 

Amps.

Maximum Forward Voltage at IF = 3.0 Amps.

VF

 

 

 

1.0

 

 

 

 

Volts

 

 

 

 

 

 

 

 

 

 

 

 

 

Maximum DC Reverse Current

Ta = 25 °C

IR

 

 

 

5.0

 

 

 

 

μA

 

 

 

 

 

 

 

 

 

 

 

 

 

at rated DC Blocking Voltage

Ta = 100 °C

IR(H)

 

 

 

50

 

 

 

 

μA

 

 

 

 

 

 

 

 

 

 

 

 

Typical Junction Capacitance (Note1)

CJ

 

 

 

50

 

 

 

 

pF

 

 

 

 

 

 

 

 

 

 

 

 

Typical Thermal Resistance (Note2)

RθJA

 

 

 

15

 

 

 

 

°C/W

 

 

 

 

 

 

 

 

 

 

 

 

 

Junction Temperature Range

 

TJ

 

 

 

- 65 to + 175

 

 

 

°C

 

 

 

 

 

 

 

 

 

 

 

 

 

Storage Temperature Range

 

TSTG

 

 

 

- 65 to + 175

 

 

 

°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Notes :

(1)Measured at 1.0 MHz and applied reverse voltage of 4.0VDC

(2)Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.

UPDATE : MAY 27, 1998

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