Page 1
HIGH FREQUENCYSECONDARY RECTIFIER
MAJORPRODUCT CHARACTERISTICS
STTH6003TV/CW
I
F(AV)
V
RRM
(max) 1 V
V
F
2 x 30 A
300 V
trr(max) 55 ns
FEATURESAND BENEFITS
COMBINES HIGHEST RECOVERY AND
VOLTAGEPERFORMANCE
ULTRA-FAST,SOFT AND NOISE-FREE
RECOVERY
INSULATEDPACKAGE: ISOTOP
Insulationvoltage:2500 V
RMS
Capacitance:< 45 pF
LOW INDUCTANCE AND LOW CAPACI-
TANCE ALLOW SIMPLIFIED LAYOUT
DESCRIPTION
Dual rectifiers suited for Switch Mode Power
SupplyandhighfrequencyDC to DCconverters.
Packaged either in ISOTOP or in TO-247, this
device is intended for use in low voltage, high
ABSOLUTERATINGS
(limitingvalues, per diode)
A1
A2
K2
A2
ISOTOP
STTH6003TV
K1
K2
K1
A1
A1
A2
TO-247
STTH6003CW
K
A2
K
A1
frequency inverters, free wheeling operation,
weldingequipmentsand telecompowersupplies.
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(RMS)
I
F(AV)
I
FSM
Repetitivepeak reversevoltage
RMSforward current ISOTOP
RMSforward current TO-247
Averageforwardcurrent ISOTOP Tc = 95° C
Surgenon repetitiveforward
current.
I
RSM
T
Tj
ISOTOPis a registered trademark of STMicroelectronics
October 1999 - Ed: 5C
Non repetitivepeakreverse current tp =100 µ s square
stg
Storagetemperaturerange ISOTOP
Maximumoperatingjunctiontemperature ISOTOP
Perdiode
δ = 0.5
TO-247 Tc =135° C
δ = 0.5
Perdevice
Perdiode
Perdevice
ISOTOP tp = 10ms sinusoidal
TO-247 tp = 10ms sinusoidal
TO-247
TO-247
300 V
100 A
60 A
30
60
30
60
400 A
300 A
4A
- 55 to+ 150 ° C
- 65 to+ 175 ° C
150 °C
175 °C
A
A
1/6
Page 2
STTH6003TV/CW
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
R
th (j-c)
th (c)
Junctionto case ISOTOP Per diode
Total
TO-247 Per diode
Total
Coupling
1.4
0.75
1
0.55
0.1
Whenthe diodes 1 and 2 are used simultaneously:
∆ Tj(diode 1) = P(diode1) x R
(perdiode) + P(diode2) x R
th(j-c)
th(C)
STATICELECTRICAL CHARACTERISTICS(per diode)
Symbol Parameter Tests conditions Min. Typ. Max. Unit
° C/W
*
I
R
V
F
Reverseleakage
current
**
Forwardvoltage drop I
V
=300V Tj=25°C
R
Tj = 125° C
= 30A Tj=25°C
F
Tj = 125° C
60 600
0.85 1
60 µ A
1.25 V
Pulsetest : * tp = 5 ms, δ <2%
**tp = 380µ s, δ <2%
To evaluatethe maximumconductionlosses use thefollowingequation:
P = 0.75 x I
F(AV)
+0.008 x I
F2(RMS)
RECOVERYCHARACTERISTICS
Symbol Tests conditions Min. Typ. Max. Unit
trr
tfr
V
FP
S
factor
I
RM
= 0.5 A Irr= 0.25A IR=1A Tj=25°C
I
F
I
=1A dIF/dt= - 50 A/µ sVR=30V
F
I
=30A dIF/dt = 200A/µ sT j = 2 5° C
F
VFR=1.1 xVFmax.
Vcc =200 V IF= 30 A Tj =125° C
dIF/dt = 200 A/µ s
0.3 -
40 ns
55
350 ns
5V
11 A
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Page 3
STTH6003TV/CW
Fig.1:
Conductionlossesversus average current
(perdiode).
P1(W)
40
35
30
δ = 0.05
δ = 0.1
δ = 0.2
δ= 0.5
δ =1
25
20
15
δ
=tp/T
T
tp
10
5
0
0 5 10 15 20 25 30 35 40
IF(av) (A)
Fig. 3a: Relative variation of thermal impedance
junctionto case versuspulse duration(ISOTOP) .
Zth(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
Fig. 2:
Forward voltage drop versus forward
current(maximum values, per diode).
IFM(A)
Tj=125° C
Typicalvalues
100
Tj=125° C
Maximumvalues
10
Tj=25° C
Maximum values
VFM(V)
1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
Fig. 3b: Relative variation of thermal impedance
junctionto case versuspulse duration (TO-247).
Zth(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
0.4
δ = 0.2
δ = 0.1
T
0.2
Single pulse
0.0
1E-3 1E-2 1E-1 1E+0 1E+1
Fig. 4:
/dt(90% confidence,per diode).
dI
F
Peak reverse recovery current versus
tp(s)
δ
=tp/T
tp
IRM(A)
22
20
18
16
VR=200V
Tj=125° C
IF=IF(av)
IF=2*IF(a v)
14
12
10
IF=0.5*IF(av)
8
6
4
2
0
0 50 100 150 200 250 300 350 400 450 500
dIF/dt(A/µ s)
0.4
δ = 0.2
δ = 0.1
0.2
Single pulse
0.0
1E-4 1E-3 1E-2 1E-1 1E+0
Fig. 5:
Reverserecovery time versusdI
tp(s)
δ
=tp/T
T
tp
/dt (90%
F
confidence,perdiode).
trr(ns)
180
160
140
120
100
80
IF=2*IF(av)
IF=IF(av)
60
40
20
0
0 50 100 150 200 250 300 350 400 450 500
IF=0.5*IF(av)
dIF/dt(A/µs)
VR=200V
Tj=125° C
3/6
Page 4
STTH6003TV/CW
Fig.6:
Softnessfactor(tb/ta)versusdI
/dt(typical
F
values,per diode).
S factor
0.6
0.5
0.4
0.3
0.2
0.1
dIF/dt(A/µ s)
0.0
0 50 100 150 200 250 300 350 400 450 500
Fig. 8:
dI
Transient peak forward voltage versus
/dt(90% confidence,per diode).
F
VFP(V)
10
IF=IF(av)
Tj=125° C
8
VR=200V
Tj=125° C
Fig. 7:
Relative variation of dynamic parameters
versusjunctiontemperature(reference:Tj = 125°C).
2.4
2.2
2.0
1.8
S factor
1.6
1.4
1.2
1.0
0.8
IRM
0.6
0.4
0.2
0.0
25 50 75 100 125
Fig. 9:
Forward recoverytime versus dI
Tj(° C)
/dt (90%
F
confidence,perdiode).
tfr(ns)
500
400
IF=IF(av)
VFR=1.1*VFmax
Tj=125° C
6
4
2
0
0 50 100 150 200 250 300 350 400 450 500
dIF/dt(A/µ s)
300
200
100
dIF/dt(A/µs)
0
0 50 100 150 200 250 300 350 400 450 500
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Page 5
PACKAGEMECHANICAL DATA
ISOTOP
STTH6003TV/CW
DIMENSIONS
REF.
A1 8.90 9.10 0.350 0.358
C2 1.95 2.05 0.077 0.081
D1 31.50 31.70 1.240 1.248
E1 23.85 24.15 0.939 0.951
E2 24.80typ. 0.976 typ.
G1 12.60 12.80 0.496 0.504
G2 3.50 4.30 0.138 0.169
F1 4.60 5.00 0.181 0.197
P1 4.00 4.40 0.157 0.173
Millimeters Inches
Min. Max. Min. Max.
A 11.80 12.20 0.465 0.480
B 7.8 8.20 0.307 0.323
C 0.75 0.85 0.030 0.033
D 37.80 38.20 1.488 1.504
E 25.15 25.50 0.990 1.004
G 14.90 15.10 0.587 0.594
F 4.10 4.30 0.161 0.169
P 4.00 4.30 0.157 0.69
S 30.10 30.30 1.185 1.193
5/6
Page 6
STTH6003TV/CW
PACKAGEMECHANICAL DATA
TO-247
V
F3
F2
Dia.
L1
L3
V
H
L5
L
F1
V2
F(x3)
==
F4
G
L4 L2
D
ME
A
DIMENSIONS
REF.
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 4.85 5.15 0.191 0.203
D 2.20 2.60 0.086 0.102
E 0.40 0.80 0.015 0.031
F 1.00 1.40 0.039 0.055
F1 3.00 0.118
F2 2.00 0.078
F3 2.00 2.40 0.078 0.094
F4 3.00 3.40 0.118 0.133
G 10.90 0.429
H 15.45 15.75 0.608 0.620
L 19.85 20.15 0.781 0.793
L1 3.70 4.30 0.145 0.169
L2 18.50 0.728
L3 14.20 14.80 0.559 0.582
L4 34.60 1.362
L5 5.50 0.216
M 2.00 3.00 0.078 0.118
V5° 5°
V2 60° 60°
Dia. 3.55 3.65 0.139 0.143
Orderingcode Marking Package Weight Base qty Deliverymode
STTH6006TV1 STTH6006TV ISOTOP 27g
Tube
withoutscrews10withscrews
STTH6006CW STTH6006CW TO-247 4.36g 30 Tube
Coolingmethod:by conduction(C)
Recommendedtorque value (ISOTOP):1.3 N.m.
Recommendedtorque value (TO-247°:0.8 N.m.
Maximumtorque value (ISOTOP):1.5 N.m.
Maximumtorque value (TO-247):1.0 N.m.
EpoxymeetsUL 94,V0
Informationfurnishedis believed tobe accurate and reliable.However, STMicroelectronics assumesno responsibility for theconsequences of
use of such informationnor for any infringement of patentsor otherrights of thirdparties which may result fromits use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replacesall information previously supplied.
STMicroelectronics products are not authorized foruse as critical components in life support devices orsystems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
1999 STMicroelectronics- Printed inItaly - All rights reserved.
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