Datasheet STTH6003TV, STTH6003CW Datasheet (SGS Thomson Microelectronics)

Page 1
HIGH FREQUENCYSECONDARY RECTIFIER
MAJORPRODUCT CHARACTERISTICS
STTH6003TV/CW
I
F(AV)
V
RRM
(max) 1 V
V
F
2 x 30 A
300 V
trr(max) 55 ns
FEATURESAND BENEFITS
COMBINES HIGHEST RECOVERY AND VOLTAGEPERFORMANCE
ULTRA-FAST,SOFT AND NOISE-FREE RECOVERY
INSULATEDPACKAGE: ISOTOP Insulationvoltage:2500 V
RMS
Capacitance:< 45 pF LOW INDUCTANCE AND LOW CAPACI-
TANCE ALLOW SIMPLIFIED LAYOUT
DESCRIPTION
Dual rectifiers suited for Switch Mode Power SupplyandhighfrequencyDC to DCconverters.
Packaged either in ISOTOP or in TO-247, this device is intended for use in low voltage, high
ABSOLUTERATINGS
(limitingvalues, per diode)
A1
A2
K2
A2
ISOTOP
STTH6003TV
K1
K2
K1
A1
A1
A2
TO-247
STTH6003CW
K
A2
K
A1
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(RMS)
I
F(AV)
I
FSM
Repetitivepeak reversevoltage RMSforward current ISOTOP RMSforward current TO-247 Averageforwardcurrent ISOTOP Tc = 95°C
Surgenon repetitiveforward current.
I
RSM
T
Tj
ISOTOPis a registered trademark of STMicroelectronics
October 1999 - Ed: 5C
Non repetitivepeakreverse current tp =100 µs square
stg
Storagetemperaturerange ISOTOP
Maximumoperatingjunctiontemperature ISOTOP
Perdiode
δ = 0.5
TO-247 Tc =135°C
δ = 0.5
Perdevice Perdiode
Perdevice ISOTOP tp = 10ms sinusoidal TO-247 tp = 10ms sinusoidal
TO-247
TO-247
300 V 100 A
60 A 30
60 30
60
400 A 300 A
4A
- 55 to+ 150 °C
- 65 to+ 175 °C 150 °C 175 °C
A
A
1/6
Page 2
STTH6003TV/CW
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
R
th (j-c)
th (c)
Junctionto case ISOTOP Per diode
Total
TO-247 Per diode
Total Coupling
1.4
0.75 1
0.55
0.1
Whenthe diodes 1 and 2 are used simultaneously: Tj(diode 1) = P(diode1) x R
(perdiode) + P(diode2) x R
th(j-c)
th(C)
STATICELECTRICAL CHARACTERISTICS(per diode)
Symbol Parameter Tests conditions Min. Typ. Max. Unit
°C/W
*
I
R
V
F
Reverseleakage current
**
Forwardvoltage drop I
V
=300V Tj=25°C
R
Tj = 125°C
= 30A Tj=25°C
F
Tj = 125°C
60 600
0.85 1
60 µA
1.25 V
Pulsetest : * tp = 5 ms, δ <2%
**tp = 380µs, δ <2%
To evaluatethe maximumconductionlosses use thefollowingequation: P = 0.75 x I
F(AV)
+0.008 x I
F2(RMS)
RECOVERYCHARACTERISTICS
Symbol Tests conditions Min. Typ. Max. Unit
trr
tfr
V
FP
S
factor
I
RM
= 0.5 A Irr= 0.25A IR=1A Tj=25°C
I
F
I
=1A dIF/dt= - 50 A/µsVR=30V
F
I
=30A dIF/dt = 200A/µsTj=25°C
F
VFR=1.1 xVFmax. Vcc =200 V IF= 30 A Tj =125°C dIF/dt = 200 A/µs
0.3 -
40 ns 55
350 ns
5V
11 A
2/6
Page 3
STTH6003TV/CW
Fig.1:
Conductionlossesversus average current
(perdiode).
P1(W)
40 35 30
δ = 0.05
δ = 0.1
δ = 0.2
δ= 0.5
δ =1
25 20 15
δ
=tp/T
T
tp
10
5 0
0 5 10 15 20 25 30 35 40
IF(av) (A)
Fig. 3a: Relative variation of thermal impedance junctionto case versuspulse duration(ISOTOP).
Zth(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
Fig. 2:
Forward voltage drop versus forward
current(maximum values, per diode).
IFM(A)
Tj=125°C
Typicalvalues
100
Tj=125°C
Maximumvalues
10
Tj=25°C
Maximum values
VFM(V)
1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
Fig. 3b: Relative variation of thermal impedance junctionto case versuspulse duration (TO-247).
Zth(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
0.4
δ = 0.2
δ = 0.1
T
0.2
Single pulse
0.0 1E-3 1E-2 1E-1 1E+0 1E+1
Fig. 4:
/dt(90% confidence,per diode).
dI
F
Peak reverse recovery current versus
tp(s)
δ
=tp/T
tp
IRM(A)
22 20 18 16
VR=200V
Tj=125°C
IF=IF(av)
IF=2*IF(a v)
14 12 10
IF=0.5*IF(av)
8 6 4 2 0
0 50 100 150 200 250 300 350 400 450 500
dIF/dt(A/µs)
0.4
δ = 0.2
δ = 0.1
0.2
Single pulse
0.0 1E-4 1E-3 1E-2 1E-1 1E+0
Fig. 5:
Reverserecovery time versusdI
tp(s)
δ
=tp/T
T
tp
/dt (90%
F
confidence,perdiode).
trr(ns)
180 160 140 120 100
80
IF=2*IF(av)
IF=IF(av)
60 40 20
0
0 50 100 150 200 250 300 350 400 450 500
IF=0.5*IF(av)
dIF/dt(A/µs)
VR=200V Tj=125°C
3/6
Page 4
STTH6003TV/CW
Fig.6:
Softnessfactor(tb/ta)versusdI
/dt(typical
F
values,per diode).
S factor
0.6
0.5
0.4
0.3
0.2
0.1
dIF/dt(A/µs)
0.0 0 50 100 150 200 250 300 350 400 450 500
Fig. 8:
dI
Transient peak forward voltage versus
/dt(90% confidence,per diode).
F
VFP(V)
10
IF=IF(av) Tj=125°C
8
VR=200V Tj=125°C
Fig. 7:
Relative variation of dynamic parameters
versusjunctiontemperature(reference:Tj = 125°C).
2.4
2.2
2.0
1.8
S factor
1.6
1.4
1.2
1.0
0.8
IRM
0.6
0.4
0.2
0.0 25 50 75 100 125
Fig. 9:
Forward recoverytime versus dI
Tj(°C)
/dt (90%
F
confidence,perdiode).
tfr(ns)
500
400
IF=IF(av)
VFR=1.1*VFmax
Tj=125°C
6
4
2
0
0 50 100 150 200 250 300 350 400 450 500
dIF/dt(A/µs)
300
200
100
dIF/dt(A/µs)
0
0 50 100 150 200 250 300 350 400 450 500
4/6
Page 5
PACKAGEMECHANICAL DATA
ISOTOP
STTH6003TV/CW
DIMENSIONS
REF.
A1 8.90 9.10 0.350 0.358
C2 1.95 2.05 0.077 0.081
D1 31.50 31.70 1.240 1.248
E1 23.85 24.15 0.939 0.951 E2 24.80typ. 0.976 typ.
G1 12.60 12.80 0.496 0.504 G2 3.50 4.30 0.138 0.169
F1 4.60 5.00 0.181 0.197
P1 4.00 4.40 0.157 0.173
Millimeters Inches
Min. Max. Min. Max.
A 11.80 12.20 0.465 0.480
B 7.8 8.20 0.307 0.323
C 0.75 0.85 0.030 0.033
D 37.80 38.20 1.488 1.504
E 25.15 25.50 0.990 1.004
G 14.90 15.10 0.587 0.594
F 4.10 4.30 0.161 0.169
P 4.00 4.30 0.157 0.69
S 30.10 30.30 1.185 1.193
5/6
Page 6
STTH6003TV/CW
PACKAGEMECHANICAL DATA
TO-247
V
F3
F2
Dia.
L1
L3
V
H
L5
L
F1
V2
F(x3)
==
F4
G
L4L2
D
ME
A
DIMENSIONS
REF.
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 4.85 5.15 0.191 0.203 D 2.20 2.60 0.086 0.102 E 0.40 0.80 0.015 0.031
F 1.00 1.40 0.039 0.055 F1 3.00 0.118 F2 2.00 0.078 F3 2.00 2.40 0.078 0.094 F4 3.00 3.40 0.118 0.133
G 10.90 0.429
H 15.45 15.75 0.608 0.620
L 19.85 20.15 0.781 0.793 L1 3.70 4.30 0.145 0.169 L2 18.50 0.728 L3 14.20 14.80 0.559 0.582 L4 34.60 1.362 L5 5.50 0.216
M 2.00 3.00 0.078 0.118
V5° 5°
V2 60° 60°
Dia. 3.55 3.65 0.139 0.143
Orderingcode Marking Package Weight Base qty Deliverymode
STTH6006TV1 STTH6006TV ISOTOP 27g
Tube
withoutscrews10withscrews
STTH6006CW STTH6006CW TO-247 4.36g 30 Tube
Coolingmethod:by conduction(C) Recommendedtorque value (ISOTOP):1.3 N.m. Recommendedtorque value (TO-247°:0.8 N.m. Maximumtorque value (ISOTOP):1.5 N.m. Maximumtorque value (TO-247):1.0 N.m. EpoxymeetsUL 94,V0
Informationfurnishedis believed tobe accurate and reliable.However, STMicroelectronics assumesno responsibility for theconsequences of use of such informationnor for any infringement of patentsor otherrights of thirdparties which may result fromits use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replacesall information previously supplied. STMicroelectronics products are not authorized foruse as critical components in life support devices orsystems without express written ap­proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
1999 STMicroelectronics- Printed inItaly - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
Australia -Brazil - China - Finland - France - Germany - Hong Kong - India - Italy -Japan - Malaysia
Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
6/6
Loading...