Zetex (Now Diodes) BSS65, BSS65R Schematic [ru]

SOT23 PNP SILICON PLANAR
BSS65
HIGH SPEED TRANSISTOR
ISSUE 2 - SEPTEMBER 1995
PARTMARKING DETAIL  BSS65 - L1
BSS65R - L5
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Base Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range t
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
BreakdownVoltages V
Cut-Off Currents I
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Static Forward Current Transfer Ratio
Transition Frequency f
Collector-Base Capacitance
Emitter Base Capacitance
Switching Times Turn-On Time Turn-Off Time
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
T
C
obo
C
ebo
t
on
t
off
-12 V IC=-10mA
-12 V
-4 V
-0.75
-0.82
30 40 150
400 MHz IC=-30mA, VCE=-10V,
amb
23 34
CEO
EBO
CM
C
C
TOT
j:tstg
= 25°C).
-100 nA VCB=-6V, IE=0
-100 nA VEB=-4V, IC=0
-0.15
-0.25VV
-0.98
-1.20VV
6pFVCB=-5V, IE=0,
6pFVEB=-0.5V, IC=0, f=1MHz
60 90
nS nS
C
-12 V
-12 V
-4 V
-200 mA
-100 mA
-50 mA
330 mW
-55 to +150 °C
=-10µA *
I
C
=-10µA
I
E
IC=-10mA, IB=-1mA I
=-30mA, IB=-3mA
C
IC=-10mA, IB=-1mA I
=-30mA, IB=-3mA
C
IC=-10mA, VCE=-0.3V I
=-30mA, VCE=-0.5V
C
f=100MHz
f=1MHz
IC=-30mA
= -IB2= -1.5mA
I
B1
V
=-10V
CC
E
B
PAGE NUMBER
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