Telefunken TSUS5202, TSUS5201, TSUS5200 Datasheet

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TSUS520.

Vishay Telefunken

GaAs Infrared Emitting Diodes in ù 5 mm (T±1¾)

Package

Description

94 8390

TSUS520. series are infrared emitting diodes in standard GaAs on GaAs technology, molded in a clear, blue±grey tinted plastic package. The devices are spectrally matched to silicon photodiodes and phototransistors.

Features

D Low cost emitter

D Low forward voltage

D High radiant power and radiant intensity

D Suitable for DC and high pulse current operation

DStandard T±1¾ (ù 5 mm) package

DAngle of half intensity ϕ = ± 15°

DPeak wavelength lp = 950 nm

DHigh reliability

DGood spectral matching to Si photodetectors

Applications

Infrared remote control and free air transmission systems with low forward voltage and low cost requirements in combination with PIN photodiodes or phototransistors.

Absolute Maximum Ratings

Tamb = 25_C

Parameter

Test Conditions

Symbol

Value

Unit

Reverse Voltage

 

VR

5

V

Forward Current

 

IF

150

mA

Peak Forward Current

tp/T = 0.5, tp = 100 ms

IFM

300

mA

Surge Forward Current

tp = 100 ms

IFSM

2.5

A

Power Dissipation

 

PV

210

mW

Junction Temperature

 

Tj

100

°C

Operating Temperature Range

 

Tamb

±55...+100

°C

Storage Temperature Range

 

Tstg

±55...+100

°C

Soldering Temperature

t x5 sec, 2 mm from case

Tsd

260

°C

Thermal Resistance Junction/Ambient

 

RthJA

375

K/W

Document Number 81055

www.vishay.de FaxBack +1-408-970-5600

Rev. 2, 20-May-99

1 (6)

Telefunken TSUS5202, TSUS5201, TSUS5200 Datasheet

TSUS520.

Vishay Telefunken

Basic Characteristics

Tamb = 25_C

Parameter

Test Conditions

Symbol

Min

Typ

Max

Unit

Forward Voltage

IF = 100 mA, tp = 20 ms

VF

 

1.3

1.7

V

Temp. Coefficient of VF

IF = 100mA

TKVF

 

±1.3

 

mV/K

Reverse Current

VR = 5 V

IR

 

 

100

mA

Junction Capacitance

VR = 0 V, f = 1 MHz, E = 0

Cj

 

30

 

pF

Temp. Coefficient of fe

IF = 20 mA

TKfe

 

±0.8

 

%/K

Angle of Half Intensity

 

ϕ

 

±15

 

deg

Peak Wavelength

IF = 100 mA

lp

 

950

 

nm

Spectral Bandwidth

IF = 100 mA

Dl

 

50

 

nm

Temp. Coefficient of lp

IF = 100 mA

TKlp

 

0.2

 

nm/K

Rise Time

IF = 100 mA

tr

 

800

 

ns

 

IF = 1.5 A

tr

 

400

 

ns

Fall Time

IF = 100 mA

tf

 

800

 

ns

 

IF = 1.5 A

tf

 

400

 

ns

Type Dedicated Characteristics

Tamb = 25_C

Parameter

Test Conditions

Type

Symbol

Min

Typ

Max

Unit

Forward Voltage

IF=1.5A, tp=100ms

TSUS5200/5201

VF

 

2.2

3.4

V

 

 

TSUS5202

VF

 

2.2

2.7

V

 

IF=100mA,

TSUS5200

Ie

10

20

 

mW/sr

 

tp=20ms

TSUS5201

I

15

25

 

mW/sr

 

 

 

e

 

 

 

 

Radiant Intensity

 

TSUS5202

Ie

20

30

 

mW/sr

IF=1.5A, tp=100ms

TSUS5200

Ie

95

180

 

mW/sr

 

 

 

 

TSUS5201

Ie

120

230

 

mW/sr

 

 

TSUS5202

Ie

170

280

 

mW/sr

Radiant Power

IF=100mA,

TSUS5200

fe

 

13

 

mW

 

tp=20ms

TSUS5201

fe

 

14

 

mW

 

 

TSUS5202

fe

 

15

 

mW

www.vishay.de FaxBack +1-408-970-5600

Document Number 81055

2 (6)

Rev. 2, 20-May-99

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