Telefunken TSTS7103, TSTS7102, TSTS7101, TSTS7100 Datasheet

TSTS710.

Vishay Telefunken

GaAs IR Emitting Diodes in Hermetically Sealed TO18

Case

Description
TSTS710. series are infrared emitting diodes in stan-
dard GaAs technology in a hermetically sealed TO±18
package. Their glass lenses provide a very high ra-
diant intensity without external optics.
Features
D Very high radiant intensity
D Suitable for pulse operation
D Narrow angle of half intensity	ϕ = ± 5°
D Peak wavelength lp = 950 nm			94 8483
D High reliability
D Good spectral matching to Si photodetectors
Applications
Radiation source in near infrared range
Absolute Maximum Ratings
Tamb = 25_C
Parameter	Test Conditions	Symbol	Value	Unit
Reverse Voltage		VR	5	V
Forward Current	Tcase x 25 °C	IF	250	mA
Peak Forward Current	tp/T = 0.5, tp x 100 ms,	IFM	500	mA
Surge Forward Current	Tcase x 25 °C	IFSM	2.5	A
	tp x 100 ms
Power Dissipation		PV	170	mW
	Tcase x 25 °C	PV	500	mW
Junction Temperature		Tj	100	°C
Storage Temperature Range		Tstg	±55...+100	°C
Thermal Resistance Junction/Ambient		RthJA	450	K/W
Thermal Resistance Junction/Case		RthJC	150	K/W

Document Number 81047	www.vishay.de •FaxBack [phone]
Rev. 2, 20-May-99	1 (5)

TSTS710.

Vishay Telefunken

Basic Characteristics

Tamb = 25_C

Parameter	Test Conditions	Symbol	Min	Typ	Max	Unit
Forward Voltage	IF = 100 mA, tp x 20 ms	VF		1.3	1.7	V
Breakdown Voltage	IR = 100 mA	V(BR)	5			V
Junction Capacitance	VR = 0 V, f = 1 MHz, E = 0	Cj		30		pF
Radiant Power	IF = 100 mA, tp x 20 ms	fe		7		mW
Temp. Coefficient of fe	IF = 100 mA	TKfe		±0.8		%/K
Angle of Half Intensity		ϕ		±5		deg
Peak Wavelength	IF = 100 mA	lp		950		nm
Spectral Bandwidth	IF = 100 mA	Dl		50		nm
Rise Time	IF = 1.5 A, tp/T = 0.01,	tr		400		ns
	tp x 10 ms
Fall Time	IF = 1.5 A, tp/T = 0.01,	tf		400		ns
	tp x 10 ms

Type Dedicated Characteristics

Tamb = 25_C

Parameter	Test Conditions	Type	Symbol	Min	Typ	Max	Unit
Radiant Intensity	IF=100mA, tp=20ms	TSTS7100	Ie	10			mW/sr
		TSTS7101	Ie	12.5		25	mW/sr
		TSTS7102	Ie	20		40	mW/sr
		TSTS7103	Ie	32		64	mW/sr

Typical Characteristics (Tamb = 25_C unless otherwise specified)

	600
)	500	RthJC
( mW
Dissipation	400
	300
± Power	200
		RthJA
V
P	100
	0					125
	0	25	50	75	100
94 8017 e		Tamb ± Ambient Temperature ( °C )

Figure 1. Power Dissipation vs. Ambient Temperature

	300
)	250
( mA
	200
Current
				RthJC
	150
± Forward
	100	RthJA
F
I	50
	0					100
	0	20	40	60	80
94 8018 e		Tamb ± Ambient Temperature ( °C )

Figure 2. Forward Current vs. Ambient Temperature

www.vishay.de •FaxBack [phone]	Document Number 81047
2 (5)	Rev. 2, 20-May-99