TSTA7100
Vishay Telefunken
GaAlAs IR Emitting Diode in Hermetically Sealed TO18
Case
Description
TSTA7100 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO±18 package. Its glass lens provides a very high radiant intensity without external optics.
Features
DExtra high radiant intensity
DHigh radiant power
DSuitable for pulse operation
DNarrow angle of half intensity ϕ = ± 5°
94 8483
DPeak wavelength lp = 875 nm
DHigh reliability
DGood spectral matching to Si photodetectors
Applications
Radiation source in near infrared range
Absolute Maximum Ratings
Tamb = 25_C
Parameter |
Test Conditions |
Symbol |
Value |
Unit |
Reverse Voltage |
|
VR |
5 |
V |
Forward Current |
|
IF |
100 |
mA |
Peak Forward Current |
tp/T = 0.5, tp x 100 ms |
IFM |
200 |
mA |
Surge Forward Current |
tp x 100 ms |
IFSM |
2.5 |
A |
Power Dissipation |
|
PV |
180 |
mW |
|
Tcase x 25 °C |
PV |
500 |
mW |
Junction Temperature |
|
Tj |
100 |
°C |
Storage Temperature Range |
|
Tstg |
±55...+100 |
°C |
Thermal Resistance Junction/Ambient |
|
RthJA |
450 |
K/W |
Thermal Resistance Junction/Case |
|
RthJC |
150 |
K/W |
Document Number 81044 |
www.vishay.de •FaxBack +1-408-970-5600 |
Rev. 2, 20-May-99 |
1 (6) |
TSTA7100
Vishay Telefunken
Basic Characteristics
Tamb = 25_C
Parameter |
Test Conditions |
Symbol |
Min |
Typ |
Max |
Unit |
Forward Voltage |
IF = 100 mA, tp x 20 ms |
VF |
|
1.4 |
1.8 |
V |
Breakdown Voltage |
IR = 100 mA |
V(BR) |
5 |
|
|
V |
Junction Capacitance |
VR = 0 V, f = 1 MHz, E = 0 |
Cj |
|
20 |
|
pF |
Radiant Intensity |
IF = 100 mA, tp x 20 ms |
Ie |
20 |
50 |
|
mW/sr |
Radiant Power |
IF = 100 mA, tp x 20 ms |
fe |
|
10 |
|
mW |
Temp. Coefficient of fe |
IF = 100 mA |
TKfe |
|
±0.7 |
|
%/K |
Angle of Half Intensity |
|
ϕ |
|
±5 |
|
deg |
Peak Wavelength |
IF = 100 mA |
lp |
|
875 |
|
nm |
Spectral Bandwidth |
IF = 100 mA |
Dl |
|
80 |
|
nm |
Rise Time |
IF = 1.5 A, tp/T = 0.01, |
tr |
|
300 |
|
ns |
|
tp x 10 ms |
|
|
|
|
|
Fall Time |
IF = 1.5 A, tp/T = 0.01, |
tf |
|
300 |
|
ns |
|
tp x 10 ms |
|
|
|
|
|
Typical Characteristics (Tamb = 25_C unless otherwise specified)
|
600 |
|
|
|
|
|
) |
500 |
RthJC |
|
|
|
|
( mW |
|
|
|
|
|
|
|
|
|
|
|
|
|
Dissipation |
400 |
|
|
|
|
|
300 |
|
|
|
|
|
|
|
|
|
|
|
|
|
± Power |
200 |
|
|
|
|
|
|
RthJA |
|
|
|
|
|
V |
|
|
|
|
|
|
P |
100 |
|
|
|
|
|
|
|
|
|
|
|
|
|
0 |
|
|
|
|
125 |
|
0 |
25 |
50 |
75 |
100 |
|
12790 |
|
Tamb ± Ambient Temperature ( °C ) |
|
|||
Figure 1. Power Dissipation vs. Ambient Temperature
|
125 |
|
|
|
|
|
) |
|
|
|
|
|
|
( mA |
100 |
|
|
|
|
|
|
|
|
|
RthJC |
|
|
Current |
|
|
|
|
|
|
75 |
|
|
|
|
|
|
|
|
|
|
|
|
|
± Forward |
50 |
|
|
|
|
|
|
|
|
RthJA |
|
|
|
F |
25 |
|
|
|
|
|
I |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
0 |
|
|
|
|
100 |
|
0 |
20 |
40 |
60 |
80 |
|
94 7971 e |
Tamb ± Ambient Temperature ( °C ) |
|
||||
Figure 2. Forward Current vs. Ambient Temperature
www.vishay.de •FaxBack +1-408-970-5600 |
Document Number 81044 |
2 (6) |
Rev. 2, 20-May-99 |
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