OMNIREL OMS305A, OMS305, OMS405A Datasheet
2.1 - 49
2.1
Three Phase, 50 Volt, 15 To 45 Amp Bridge
With Current And Temperature Sensing
In A Low Profile Package
4 09 R0
3 PHASE, LO W VOLTA GE, LOW R
DS(on)
, MOSFET
BRIDGE CIRCUIT IN A PLASTIC PACKA GE
FEATURES
• Three Phase Power Switch Configuration
• Zener Gate Protection
• 10 Miliohm Shunt Resistor
• Linear Thermal Sensor
• Isolated Low Profile Package
• Output Currents Up To 45 Amps
DESCRIPTION
This series of MOSFET switches is configured in a 3 phase bridge with a common
VDDline, precision series shunt resistor in the source line, and a sensing element to
monitor the substrate temperature. This device is ideally suited for Motor Control
applications where size, performance, and efficiency are key.
MAXIMUM RATINGS
(@ 25°C)
Part V
DS
R
DS(on)
I
D
Package
Number (Volts) (m ) (Amps)
OMS305 50 100 15 MP-3
OMS305A 50 70 20 MP-3
OMS405 50 14 45 MP-3
SCHEMATIC
OMS305AOMS305
OMS405
21 65 109
34 78 1112 13 14
1 5, 16, 17
18, 19, 20
32, 33, 34
29, 30, 31
26, 27, 28
23, 24, 25
21
22
2.1 - 50
2.1
OMS305, OMS305A, OMS405
ELECTRICAL CHARACTERISTICS: OMS305
(TC= 25° unless otherwise specified)
Characteristic Symbol Min. Typ. Max. Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage, ID= 250 µA, VGS= 0 V
BRDSS
50--V
Zero Gate Voltage Drain Current = V
GS
, VDS= Max. Rat. I
DSS
- - 25.0 µA
V
DS
= Max. Rat. x 0.8, TC= 70°C - - 500.0 µA
Gate-Body Leakage, V
GS
= ±12 V I
GSS
- - ±500 nA
ON CHARACTERISTICS
Gate-Threshold Voltage, VDS= VGS, ID= 250 µA V
GSth
2.0 - 4.0 V
Static Drain-Source On-Resistance, V
GS
= 10 Vdc, ID= 9.0 A R
DSon
- - 0.1
Static Drain-Source On-Resistance T
C
= 70°C - - 0.2
On State Drain Current, V
DS
> I
D(on)
X R
DS(on)
Max., VGS= 10 I
Don
15--A
DYNAMIC CHARACTERISTICS
Forward Transconductance VDS> I
D(on)
X R
DS(on)
Max., ID= 9.0A g
fs
3.0 - - mho
Input Capacitance V
DS
= 25 V, C
iss
- - 650 pF
Output Capacitance V
GS
= 0, C
oss
- - 450 pF
Reverse Transfer Capacitance f = 1.0 mHz C
rss
- - 280 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time t
don
- - 30 ns
Rise Time V
DD
= 30 V, ID= 3 A, t
r
- - 85 ns
Turn-Off Delay Time R
GS
= 50 , VGS= 10 V t
doff
- - 90 ns
Fall Time t
f
- - 110 ns
SOURCE DRAIN DIODE CHARACTERISTICS
Source - Drain Current I
SD
--14A
Source - Drain Current Pulsed I
SDM
*--56A
Forward On-Voltage I
SD
= 28 A, VGS= 0 V
SD
- - 1.8 V
Reverse Recovery Time I
SD
= 13 A, di/dt = 100 A/µSec t
rr
- 120 - ns
Reverse Recovered Charge Q
rr
- 0.15 - µC
RESISTOR CHARACTERISTICS
Resistor Tolerance R
S
9.0 10 11 m
Temperature Coefficient, -40°C to +70°C T
cr
- 100 - ppm
* Indicates Pulse Test 300 µsec, Duty Cycle 1.5%
ABSOLUTE MAXIMUM RATINGS (TC= 25°C unless otherwise noted)
Parameter OMS305 OMS305A OMS405 Units
V
DS
Drain-Source Voltage 50 50 50 V
V
DGR
Drain-Gate Voltage (RGS= 1 m ) 50 50 50 V
ID@ TC= 25°C Continuous Drain Current 15 25 45 A
ID@ TC= 70°C Continuous Drain Current 11 16 45 A
I
DM
Pulsed Drain Current
1
56 100 140 A
PD@ TC= 25°C Maximum Power Dissipation
2
20 50 50 W
PD@ TC= 70°C Maximum Power Dissipation
2
11 18 27 W
Junction-To-Case Linear Derating Factor 0.2 0.33 0.5 W/°C
Thermal Resistance Junction-To-Case 5.0 3.0 2.0 °C/W
Note 1: Pulse Test: Pulse width 300 sec. Duty Cycle 1.5%.
Note 2: Maximum Junction Temperature equal to 125°C.
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