OMNIREL OM6N100SA, OM3N100ST, OM1N100ST, OM5N100SA, OM3N100SA Datasheet
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OM1N100SA
DRAIN
GATE
SOURCE
OM3N100SA
OM5N100SA
OM6N100SA
POWER MOSFET IN HERMETIC ISOLATED
JEDEC PACKAGE
1000V, Up To 6 Amp, N-Channel
MOSFET In Hermetic Metal Package
FEATURES
• Isolated Hermetic Metal Package
• Fast Switching
• Low R
• Available Screened To MIL-19500, TX, TXV And S
• Ceramic Feedthroughs Also Available
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits.
DS(on)
OM1N100ST
OM3N100ST
MAXIMUM RATINGS
PART NUMBER R
OM1N100SA 8.0 1.0A
OM3N100SA 5.2 3.5A
OM5N100SA 3.0 5.0A
OM6N100SA 2.0 6.0A
OM3N100ST 5.4 3.5A
OM1N100ST 8.2 1.0A
SCHEMATIC
DS(on)
PIN CONNECTION
TO-254AA
123
I
D
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
3.1
TO-257AA
123
4 11 R1
Supersedes 2 05 R0
3.1 - 15
3.1
G
D
S
G
D
S
OM1N100SA/ST Series
ELECTRICAL CHARACTERISTICS: T
= 25° unless otherwise noted ELECTRICAL CHARACTERISTICS: TC= 25° unless otherwise noted
C
STATIC P/N OM1N100SA (See Note 3) STATIC P/N OM3N100SA (See Note 3)
Parameter Min. Typ. Max. Units Test Conditions Parameter Min. Typ. Max. Units Test Conditions
BV
Drain-Source Breakdown 1000 V VGS= 0, BV
DSS
Voltage I
V
Gate-Threshold Voltage 2.0 4.0 V VDS= VGS, ID= 250 mAV
GS(th)
I
Gate-Body Leakage Forward 100 nA VGS= 20 V, VDS= 0 I
GSSF
I
Gate-Body Leakage Reverse -100 nA VGS= - 20 V, VDS= 0 I
GSSR
I
Zero Gate Voltage 0.25 mA VDS= Max. Rat., VGS= 0 I
DSS
Drain Current 1.0 mA V
I
On-State Drain Current 1.0 A VDS> I
D(on)
R
Static Drain-Source On-State SA 8.0 VGS= 10 V R
DS(on)
Resisitance
R
Static Drain-Source On-State SA 15.0 VGS= 10 V R
DS(on)
Resistance
3.1 - 16
DYNAMIC DYNAMIC
g
Forward Transductance 1.0 S VDS= 10V, ID= 1 A gfsForward Transductance 1.0 S VDS= 10, ID= 1.5 A
fs
C
Input Capacitance 950 pF VGS= 0 C
iss
C
Output Capacitance 110 pF VDS= 25 V C
oss
C
Reverse Transfer Capacitance 40 pF f = 1 MHz C
rss
T
Turn-On Delay Time 90 ns T
d(on)
t
Rise Time 90 ns t
r
T
Turn-Off Delay Time 115 ns T
d(off)
t
Fall Time 75 ns t
f
1, 3
1, 3
ST 8.2 ID=.5A Resistance
ST 15.4 ID=.5A, TC= 100° C Resistance
= 250 mA Voltage ID= 250 mA
D
= 0.8 x Max. Rat., Current 1.0 mA VDS= 0.8 x Max. Rat.,
DS
V
= 0, TC= 125° C VGS= 0, TC= 125° C
GS
x R
D(on)
V
= 10 V VGS= 10 V
GS
Max. I
DS(on)
VDD= 600 V, ID= 3.5
RG= 50W, VGS= 10 V
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
Continuous Source Current 3.5 A Modified MOSPOWER I
S
(Body Diode) symbol showing (Body Diode) symbol showing
I
Source Current
SM
(Body Diode) Junction rectifier. (Body Diode) Junction rectifier.
VSDDiode Forward Voltage
t
Reverse Recovery Time 900 ns IF= IS, VDD= 100 V t
rr
1 Pulse Test: Pulse Width 300msec, Duty Cycle 1.5%. 1 Pulse Test: Pulse Width 300msec, Duty Cycle 1.5%.
2 Pulse Width limited by safe operating area. 2 Pulse Width limited by safe operating area.
3 OM1N100ST - All characteristics the same except R
1
2
14 A the integral P-N I
2.5 V TC= 25 C, IS= 3.5 A, VGS= 0 VSDDiode Forward Voltage
dl
/ds = 100 A/ms, TJ= 150 C dlF/ds = 100 A/ms, TJ= 150 C
F
DS(on)
Drain-Source Breakdown 1000 V VGS= 0,
DSS
Gate-Threshold Voltage 2.0 4.0 V VDS= V
GS(th)
Gate-Body Leakage Forward 100 nA VGS= 20 V
GSSF
Gate-Body Leakage Reverse - 100 nA VGS= - 20 V
GSSR
Zero Gate Voltage Drain 0.25 mA VDS= Max. Rat., VGS= 0
DSS
On-State Drain Current 3.5 A VDS> I
D(on)
Static Drain-Source On-State SA 5.2 VGS= 10 V
DS(on)
Static Drain-Source On-State SA 10.0 VGS= 10 V
DS(on)
Input Capacitance 950 pF VGS= 0
iss
Output Capacitance 110 pF VDS= 25 V
oss
Reverse Transfer Capacitance 40 pF f = 1 MHz
rss
Turn-On Delay Time 90 ns
d(on)
Rise Time 90 ns
r
Turn-Off Delay Time 115 ns
d(off)
Fall Time 75 ns
f
Continuous Source Current 3.5 A Modified MOSPOWER
S
Source Current
SM
Reverse Recovery Time 900 ns IF= IS, VDD= 100 V
rr
3 OM3N100ST - All characteristics the same except R
1, 3
1, 3
ST 5.4 ID=.5A
ST 10.4 ID=.5A, TC= 100° C
1
2
14 A the integral P-N
2.5 V TC= 25 C, IS= 3.5 A, VGS= 0
DS(on)
GS
D(on)
VDD= 600 V, I
RG= 50W, V
, I
= 250 mA
D
x R
D
GS
DS(on)
= 3.5
= 10 V
Max
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