OMNIREL OM6N100NK, OM5N100NK Datasheet
POWER MOSFETS IN A TO-3 PACKAGE
1.197
1.177
0.675
0.655
0.188 R.
MAX.
0.440
0.420
0.161
0.151
0.525 R.
MAX.
0.225
0.205
SEATING
PLANE
0.312
MIN.
0.450
0.250
0.063
0.058
2 PLCS.
0.135
MAX.
0.875
MAX.
1.53
REF.
1000V, Up To 6 Amp, N-Channel
MOSFETs In A TO-3 Package
FEATURES
• TO-3 Hermetic Package, .060 Dia. Leads
• Fast Switching
• Low R
• 1000 Volt, Size 5 Die
• Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits.
DS(on)
OM5N100NK
OM6N100NK
MAXIMUM RATINGS
4 11 R1
Supersedes 3 12 R0
PART NUMBER VDS(V) R
() ID(A)
DS(on)
OM5N100NK 1000 3.0 5.0
OM6N100NK 1000 2.0 6.0
MECHANICAL OUTLINE
Pin Connection
Pin 1: Gate
Pin 2: Source
Case: Drain
3.1 - 41
3.1
2
1
3.1
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
G
D
S
OM5N100NK - OM6N100NK
ELECTRICAL CHARACTERISTICS: T
Parameter Min. Typ. Max. Units Test Conditions
BV
Voltage I
V
GS(th)
I
GSSF
I
GSSR
I
DSS
I
D(on)
R
DS(on)
R
DS(on)
R
DS(on)
R
DS(on)
DYNAMIC
gfsForward Transductance 4.0 S VDS= 25V, ID= 3.5 A
C
iss
C
oss
C
rss
T
d(on)
t
r
t
d (off)
t
f
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
ISContinuous Source Current 6 A Modified MOSPOWER
ISMSource Current
VSDDiode Forward Voltage
t
rr
1 Pulse Test: Pulse Width 300msec, Duty Cycle
2 Pulse Width limited by safe operating area.
= 25° unless otherwise noted
C
Drain-Source Breakdown 1000 V VGS= 0,
DSS
Gate-Threshold Voltage 2.0 4.0 V VDS= V
= 250 mA
D
,
ID= 250 mA
GS
Gate-Body Leakage Forward 100 nA VGS= 20 V, VDS= 0
Gate-Body Leakage Reverse - 100 nA VGS= - 20 V, VDS= 0
Zero Gate Voltage 0.25 mA VDS= Max. Rat., VGS= 0
Drain Current 1.0 mA V
On-State Drain Current 5.0 A VDS> I
= 0.8 x Max. Rat.,
DS
V
= 0, TC= 125° C
GS
x R
D(on)
V
= 10 V
GS
Static Drain-Source On-State 3.0 VGS= 10 V, ID= 2.5 A
1
Resistance
- OM5N100NK
Static Drain-Source On-State 6.0 VGS= 10 V, ID= 2.5 A
1
Resistance
- OM5N100NK TC= 100° C
Static Drain-Source On-State 2.0 VGS= 10 V, ID= 3.0 A
1
Resistance
- OM6N100NK
Static Drain-Source On-State 4.0 VGS= 10 V, ID= 3.0 A
1
Resistance
- OM6N100NK TC= 100° C
Input Capacitance 2800 pF VGS= 0
Output Capacitance 350 pF VDS= 25 V
Reverse Transfer Capacitance 130 pF f = 1 MHz
Turn-On Delay Time 65 ns VDD= 400 V, ID= 6 A
Rise Time 55 ns Rg= 7 W, VGS= 10 V
Turn-Off Delay Time 62 ns
Fall Time 25 ns
VDD= 800 V, ID= 6 A,
R
= 7 , VBS= 10 V
G
(Body Diode) symbol showing
2
24 A the integral P-N
(Body Diode) Junction rectifier.
1
2.5 V TC= 25 C, IS= 6 A, VGS= 0
Reverse Recovery Time 1100 ns IF= IS, VDD= 100V,
dl
/ds = 100 A/ms, TJ= 150°C
F
1.5%.
DS(on)
Max.,
ABSOLUTE MAXIMUM RATINGS (TC= 25°C unless otherwise noted)
Symbol Parameter OM5N100NK OM6N100NK Units
V
DS
V
DGR
Drain-Source Voltage 1000 1000 V
Drain-Source Voltage (RGS= 20k ) 1000 1000 V
ID@ TC= 25°C Continuous Drain Current 5.0 6.0 A
ID@ TC= 100°C Continuous Drain Current 3.1 3.7 A
I
DM
V
GS
Pulsed Drain Current
Gate-Source Voltage ±20 ±20 V
1
24 24 A
PD@ TC= 25°C Maximum Power Dissipation 130 130 W
PD@ TC=100°C Maximum Power Dissipation 51 51 W
Junction-To-Case Linear Derating Factor 1.00 1.00 W/°C
Junction-To-Ambient Linear Derating Factor .033 .033 W/°C
T
J
T
stg
Operating and
Storage Temperature Range -55 to 150 -55 to 150 °C
Lead Temperature (1/16" from case for 10secs.) 300 300 °C
1 Pulse Test: Pulse width 300 µsec. Duty Cycle 2%.
THERMAL RESISTANCE (Maximum) at TA= 25°C
R
thJC
R
thJA
Junction-To-Case Max. 1.0 °C/W
Junction-to-Ambient 30 °C/W Free Air Operation
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