OMNIREL OM6516SC, OM6520SC Datasheet
INSULATED GATE BIPOLAR TRANSISTOR
.707
.697
.750
.500
.835
.815
.695
.685
.165
.155
.200 TYP.
.550
.530
.270
.240
.045
.035
.140 TYP.
.092 MAX.
.065
.055
.005
(IGBT) IN A HERMETIC TO-258AA PACKAGE
1000 Volt, 25 Amp, N-Channel IGBT
In A Hermetic Metal Package
FEATURES
• Isolated IGBTs In A Hermetic Package
• High Input Impedance
• Low On-Voltage
• High Current Capability
• High Switching Speed
• Low Tail Current
• Available With Free Wheeling Diode
• Available Screened To MIL-S-19500, TX, TXV And S Levels
OM6516SC
OM6520SC
4 11 R2
Supersedes 2 07 R1
DESCRIPTION
This IGBT power transistor features the high switching speeds of a power MOSFET
and the low on-resistance of a bipolar transistor. It is ideally suited for high power
switching applications such as frequency converters for 3Ø motors, UPS and high
power SMPS.
MAXIMUM RATINGS @ 25°C Unless Specified Otherwise
123
CEG
6 PIN SIP
qq
JC
P
D
PART IC (Cont.) V
(BR)CES
V
(Typ.) Tf(Typ.)
CE (sat)
NUMBER @ 90°C, A V V ns °C/W W °C
OM6516SC 25 1000 4.0 300 1.0 125 150
OM6520SC 25 1000 4.0 300 1.0 125 150
SCHEMATICS
Collector
Gate
Emitter
OM6516SC OM6520SC(w/Diode)
MOD PAK
Gate
Collector
Emitter
NOTE: IGBTs are also available in Z-Tab, dual and quad
pak styles - Please call the factory for more information.
PACKAGE OPTIONS
3.1 - 155
MECHANICAL OUTLINE
T
J
3.1
3.1
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
OM6516SC OM6520SC
PRELIMINARY DATA: OM6516SC
IGBT CHARACTERISTICS
Parameter - OFF Min. Typ. Max. Units Test Conditions
V
(BR)CES
I
CES
I
GES
Parameter - ON
V
GE(th)
V
CE(sat)
V
CE(sat)
Dynamic
g
fs
C
ies
C
oes
C
res
Switching-Resistive Load
T
d(on)
t
r
T
d(off)
t
f
Switching-Inductive Load
T
d(off)
t
f
E
off
Collector Emitter 1000 V VCE= 0
Breakdown Voltage I
= 250 µA
C
Zero Gate Voltage 0.25 mA VCE= Max. Rat., VGE= 0
Drain Current 1.0 mA V
= 0.8 Max. Rat., VGE= 0
CE
T
= 125°C
C
Gate Emitter Leakage ±100 nA VGE= ±20 V
Current V
CE
= 0 V
Gate Threshold Voltage 4.5 6.5 V VCE= VGE, IC= 1 mA
Collector Emitter 3.0 V VGE= 15 V, IC= 15 A
Saturation Voltage T
= 25°C
C
Collector Emitter 4.0 4.5 V VGE= 15 V, IC= 15 A
Saturation Voltage T
= 125°C
C
Forward Transductance 5.5 S VCE= 20 V, IC= 15 A
Input Capacitance 2000 pF VGE= 0
Output Capacitance 160 pF VCE= 25 V
Reverse Transfer Capacitance 65 pF f = 1 mHz
Turn-On Time 50 nS VCC= 600 V, IC= 15 A
Rise Time 200 nS VGE= 15 V, Rg= 3.3 ,
Turn-Off Delay Time 200 nS Tj= 125°C
Fall Time 300 nS
Turn-Off Delay Time 200 nS V
= 600 V, IC= 15 A
CEclamp
Fall Time 200 nS VGE= 15 V, Rg= 3.3
Turn-Off Losses 1.5 mWs L = 1 mH, Tj= 125°C
PRELIMINARY DATA: OM6520SC
IGBT CHARACTERISTICS
Parameter - OFF (see Note 1) Min. Typ. Max. Units Test Conditions
V
Collector Emitter 1000 V VCE= 0
(BR)CES
Breakdown Voltage I
I
Zero Gate Voltage 0.25 mA VCE= Max. Rat., VGE= 0
CES
Drain Current 1.0 mA V
I
Gate Emitter Leakage ±100 nA VGE= ±20 V
GES
Current V
Parameter - ON
V
Gate Threshold Voltage 4.5 6.5 V VCE= VGE, IC= 1 mA
GE(th)
V
Collector Emitter 3.0 V VGE= 15 V, IC= 15 A
CE(sat)
Saturation Voltage T
V
Collector Emitter 4.0 4.5 V VGE= 15 V, IC= 15 A
CE(sat)
Saturation Voltage T
Dynamic
g
Forward Transductance 5.5 S VCE= 20 V, IC= 15 A
fs
C
Input Capacitance 2000 pF VGE= 0
ies
C
Output Capacitance 160 pF VCE= 25 V
oes
C
Reverse Transfer Capacitance 65 pF f = 1 mHz
res
Switching-Resistive Load
T
Turn-On Time 50 nS VCC= 600 V, IC= 15 A
d(on)
t
Rise Time 200 nS VGE= 15 V, Rg= 3.3 ,
r
T
Turn-Off Delay Time 200 nS Tj= 125°C
d(off)
t
Fall Time 300 nS
f
Switching-Inductive Load
T
Turn-Off Delay Time 200 nS V
d(off)
t
Fall Time 200 nS VGE= 15 V, Rg= 3.3
f
E
Turn-Off Losses 1.5 mWs L = 1 mH, Tj= 125°C
off
DIODE CHARACTERISTICS
V
Maximum Forward Voltage 1.85 V IF= 30 A, TC= 25°C
f
1.70 V I
I
Maximum Reverse Current 500 µA VR= 1000 V, TC= 25°C
r
7.0 mA V
t
Reverse Recovery Time 50 nS IF= 1 A, di / dt= -15 A µ/S
rr
= 250 µA
C
= 0.8 Max. Rat., VGE= 0
CE
T
= 125°C
C
= 0 V
CE
= 25°C
C
= 125°C
C
= 600 V, IC= 15 A
CEclamp
= 30 A, TC= 150°C
F
= 800 V, TC= 125°C
R
V
= 30 V, Tj= 25°C
R
Note 1: Limited by diode I
characteristic.
r
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