OMNIREL OM6509SA, OM6508SA Datasheet

3.1 - 147

3.1

500 Volt, 5 And 10 Amp, N-Channel IGBT
With a Soft Recovery Diode
In A Hermetic Metal Package

4 11 R2
Supersedes 2 07 R1

INSULATED GATE BIPOLAR TRANSISTOR
(IGBT) IN A HERMETIC TO-254AA PACKAGE

FEATURES

• Isolated Hermetic Metal Package

• High Input Impedance

• Low On-Voltage

• High Current Capability

• Fast Turn-Off

• Low Conductive Losses

• Available Screened To MIL-S-19500, TX, TXV And S Levels

• Free Wheeling Diode

• Ceramic Feedthroughs Available

DESCRIPTION

This power module includes an IGBT power transistor which features a high
impedance insulated gate and the low on-resistance characteristics of bipolar
transistor with a free wheeling diode connected across the emitter and collector.
These devices are ideally suited for motor drives, UPS converters, power supplies
and resonant power converters.

MAXIMUM RATINGS @ 25°C Unless Specified Otherwise

OM6508SA
OM6509SA

PART IC (Cont.) V

(BR)CES

V

CE (sat)

(Typ.) Tf(Typ.)

qq

JC

P

D

T

J

NUMBER @ 90°C, A V V ns °C/W W °C

OM6508SA 5 500 2.8 400 3.8 35 150
OM6509SA 10 500 2.8 400 3.0 42 150

SCHEMATIC

.144 DIA.

.050
.040

.260
.249

.685
.665

.800
.790

.545
.535

.550
.510

.045
.035

.550
.530

.150 TYP.

.150 TYP.

.005

Collector

Emitter

123
CEG

Gate

MECHANICAL OUTLINE

Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter “C” to the part number. Example - OMXXXXCSA.

IGBTs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information.

PACKAGE OPTIONS

MOD PAK

Z-TAB

6 PIN SIP

PIN CONNECTION

Pin 1: Collector
Pin 2: Emitter
Pin 3: Gate

OM6508SA - OM6509SA

3.1

205 Crawford Street, Leominster, MA 01453 USA [phone] FAX [phone]

PRELIMINARY DATA: OM6508SA

IGBT CHARACTERISTICS

Parameter - OFF (see Note 1) Min. Typ. Max. Units Test Conditions

V

(BR)CES

Collector Emitter 500 V VCE= 0
Breakdown Voltage I

C

= 250 µA

I

CES

Zero Gate Voltage 0.25 mA VCE= Max. Rat., VGE= 0
Drain Current 1.0 mA V

CE

= 0.8 Max. Rat., VGE= 0

T

C

= 125°C

I

GES

Gate Emitter Leakage ±100 nA VGE= ±20 V
Current V

CE

= 0 V

Parameter - ON

V

GE(th)

Gate Threshold Voltage 2.0 4.0 V VCE= VGE, IC= 250 µA

V

CE(sat)

Collector Emitter 3.0 V VGE= 15 V, IC= 5 A
Saturation Voltage T

C

= 25°C

V

CE(sat)

Collector Emitter 2.8 3.0 V VGE= 15 V, IC= 5 A
Saturation Voltage T

C

= 100°C

Dynamic

g

fs

Forward Transductance 2.0 S VCE= 20 V, IC= 5 A

C

ies

Input Capacitance 260 pF VGE= 0

C

oes

Output Capacitance 50 pF VCE= 25 V

C

res

Reverse Transfer Capacitance 20 pF f = 1 mHz

Switching-Resistive Load

T

d(on)

Turn-On Time 37 nS VCC= 400 V, IC= 5 A

t

r

Rise Time 150 nS VGE= 15 V, Rg= 47

Switching-Inductive Load

t

r(Volt)

Off Voltage Rise Time .35 µS V

CEclamp

= 400 V, IC= 5 A

t

f

Fall Time .81 µS VGE= 15 V, Rg= 100

t

cross

Cross-Over Time 1.2 µS L = 0.1 mH, Tj= 100°C

E

off

Turn-Off Losses .95 mJ

DIODE CHARACTERISTICS

V

f

Maximum Forward Voltage 1.5 V IF= 8 A, TC= 25°C

1.4 V I

F

= 8 A, TC= 150°C

I

r

Maximum Reverse Current 150 µA VR= 600 V, TC= 25°C

1.5 mA V

R

= 480 V, TC= 125°C

t

rr

Reverse Recovery Time 35 nS IF= 1 A, di / dt= -15 A µ/S

V

R

= 30 V, Tj= 25°C

Note 1: Limited by diode I

r

characteristic.

PRELIMINARY DATA: OM6509SA

IGBT CHARACTERISTICS

Parameter - OFF (see Note 1) Min. Typ. Max. Units Test Conditions

V

(BR)CES

Collector Emitter 500 V VCE= 0
Breakdown Voltage I

C

= 250 µA

I

CES

Zero Gate Voltage 0.25 mA VCE= Max. Rat., VGE= 0
Drain Current 1.0 mA V

CE

= 0.8 Max. Rat., VGE= 0

T

C

= 125°C

I

GES

Gate Emitter Leakage ±100 nA VGE= ±20 V
Current V

CE

= 0 V

Parameter - ON

V

GE(th)

Gate Threshold Voltage 2.0 4.0 V VCE= VGE, IC= 250 µA

V

CE(sat)

Collector Emitter 3.0 2.7 V VGE= 15 V, IC= 10 A
Saturation Voltage T

C

= 25°C

V

CE(sat)

Collector Emitter 2.8 3.0 V VGE= 15 V, IC= 10 A
Saturation Voltage T

C

= 100°C

Dynamic

g

fs

Forward Transductance 2.5 S VCE= 20 V, IC= 10 A

C

ies

Input Capacitance 950 pF VGE= 0

C

oes

Output Capacitance 140 pF VCE= 25 V

C

res

Reverse Transfer Capacitance 80 pF f = 1 mHz

Switching-Resistive Load

T

d(on)

Turn-On Time 150 nS

T

r

Rise Time 1000 nS VCC= 400 V, IC= 10 A

T

d(off)

Turn-Off Delay Time 700 nS VGE= 15 V, Rg= 100

T

f

Fall Time 1500 nS

Switching-Inductive Load

T

d(off)

Turn-Off Delay Time 1.2 µS V

CEclamp

= 350 V, IC= 10 A

t

f

Fall Time 1.5 µS VGE= 15 V, Rg= 100

t

cross

Cross-Over Time 2.0 µS L = 180 µH, Tj= 100°C

E

off

Turn-Off Losses 4.0 mJ

DIODE CHARACTERISTICS

V

f

Maximum Forward Voltage 1.4 V IF= 16 A, TC= 25°C

1.5 V I

F

= 16 A, TC= 150°C

I

r

Maximum Reverse Current 500 µA VR= 600 V, TC= 25°C

3.0 mA V

R

= 480 V, TC= 125°C

t

rr

Reverse Recovery Time 35 nS IF= 1 A, di / dt= -15 A µ/S

V

R

= 30 V, Tj= 25°C

Note 1: Limited by diode I

r

characteristic.