OMNIREL OM6506SA, OM6505SA Datasheet
PART IC (Cont.) V
(BR)CES
V
CE (sat)
(Typ.) Tf(Typ.)
qq
JC
P
D
T
J
NUMBER @ 90°C, A V V ns °C/W W °C
OM6505SA 15 500 2.8 400 1.75 72 150
OM6506SA 20 500 2.8 400 1.00 125 150
3.1 - 143
3.1
500 Volt, 15 And 20 Amp, N-Channel IGBT
In A Hermetic Metal Package
4 11 R2
Supersedes 2 07 R1
INSULATED GATE BIPOLAR TRANSISTOR
(IGBT) IN A HERMETIC TO-254AA PACKAGE
FEATURES
• Isolated Hermetic Metal Package
• High Input Impedance
• Low On-Voltage
• High Current Capability
• Fast Turn-Off
• Available Screened To MIL-S-19500, TX, TXV And S Levels
• Low Conductive Losses
• Ceramic Feedthroughs Available
DESCRIPTION
The IGBT power transistor features a high impedance insulated gate and a low
on-resistance characteristic of bipolar transistors. These devices are ideally suited
for motor drives, UPS converters, power supplies and resonant power converters.
MAXIMUM RATINGS @ 25°C Unless Specified Otherwise
OM6505SA
OM6506SA
SCHEMATIC
.144 DIA.
.050
.040
.260
.249
.685
.665
.800
.790
.545
.535
.550
.510
.045
.035
.550
.530
.150 TYP.
.150 TYP.
.005
Collector
Emitter
123
CEG
Gate
MECHANICAL OUTLINE
Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter “C” to the part number. Example - OMXXXXCSA.
IGBTs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information.
PACKAGE OPTIONS
MOD PAK
Z-TAB
6 PIN SIP
PIN CONNECTION
Pin 1: Collector
Pin 2: Emitter
Pin 3: Gate
OM6505SA - OM6506SA
3.1
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
PRELIMINARY DATA: OM6505SA
IGBT CHARACTERISTICS
Parameter - OFF Min. Typ. Max. Units Test Conditions
V
(BR)CES
Collector Emitter 500 V VCE= 0
Breakdown Voltage I
C
= 250 µA
I
CES
Zero Gate Voltage 0.25 mA VCE= Max. Rat., VGE= 0
Drain Current 1.0 mA V
CE
= 0.8 Max. Rat., VGE= 0
T
C
= 125°C
I
GES
Gate Emitter Leakage ±100 nA VGE= ±20 V
Current V
CE
= 0 V
Parameter - ON
V
GE(th)
Gate Threshold Voltage 2.0 4.0 V VCE= VGE, IC= 250 µA
V
CE(sat)
Collector Emitter 3.0 V VGE= 15 V, IC= 15 A
Saturation Voltage T
C
= 25°C
V
CE(sat)
Collector Emitter 2.8 3.0 V VGE= 15 V, IC= 15 A
Saturation Voltage T
C
= 100°C
Dynamic
g
fs
Forward Transductance 5.0 S VCE= 20 V, IC= 15 A
C
ies
Input Capacitance 1700 pF VGE= 0
C
oes
Output Capacitance 215 pF VCE= 25 V
C
res
Reverse Transfer Capacitance 115 pF f = 1 mHz
Switching-Resistive Load
T
d(on)
Turn-On Time 60 nS VCC= 400 V, IC= 15 A
t
r
Rise Time 240 nS VGE= 15 V, Rg= 47
Switching-Inductive Load
t
r(Volt)
Off Voltage Rise Time .55 µS V
CEclamp
= 400 V, IC= 15 A
t
f
Fall Time .60 µS VGE= 15 V, Rg= 100
t
cross
Cross-Over Time 1.2 µS L = 0.1 mH, Tj= 100°C
E
off
Turn-Off Losses 3.0 mJ
PRELIMINARY DATA: OM6506SA
IGBT CHARACTERISTICS
Parameter - OFF Min. Typ. Max. Units Test Conditions
V
(BR)CES
Collector Emitter 500 V VCE= 0
Breakdown Voltage I
C
= 250 µA
I
CES
Zero Gate Voltage 0.25 mA VCE= Max. Rat., VGE= 0
Drain Current 1.0 mA V
CE
= 0.8 Max. Rat., VGE= 0
T
C
= 100°C
I
GES
Gate Emitter Leakage ±100 nA VGE= ±20 V
Current V
CE
= 0 V
Parameter - ON
V
GE(th)
Gate Threshold Voltage 2.0 4.0 V VCE= VGE, IC= 250 µA
V
CE(sat)
Collector Emitter 3.0 V VGE= 15 V, IC= 20 A
Saturation Voltage T
C
= 25°C
V
CE(sat)
Collector Emitter 2.8 3.0 V VGE= 15 V, IC= 20 A
Saturation Voltage T
C
= 100°C
Dynamic
g
fs
Forward Transductance 8.0 S VCE= 15 V, IC= 20 A
C
ies
Input Capacitance 3500 pF VGE= 0
C
oes
Output Capacitance 250 pF VCE= 25 V
C
res
Reverse Transfer Capacitance 50 pF f = 1 mHz
Switching-Resistive Load
T
d(on)
Turn-On Time 100 nS VCC= 400 V, IC= 20 A
t
r
Rise Time 200 nS VGE= 15 V, Rg= 100
T
d(off)
Turn-Off Delay Time 1.0 µS Tj= 125°C
t
f
Fall Time 2.0 µS
Switching-Inductive Load
T
d(off)
Turn-Off Delay Time 1.0 nS V
CEclamp
= 400 V, IC= 20 A
t
r
Current Fall Time 3.0 µS VGE= 15 V, Rg= 100
L = 0.1 mH, T
j
= 125°C
Loading...