OMNIREL OM6503SC, OM6504SC, OM6503ST Datasheet
FEATURES
• Isolated Hermetic Metal Package
• High Input Impedance
• Low On-Voltage
• High Current Capability
• Fast Turn-Off
• Low Conductive Losses
• Available Screened to MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
The IGBT power transistor features a high impedance insulated gate and a low
on-resistance characteristic of bipolar transistors. These devices are ideally suited
for motor drives, UPS converters, power supplies and resonant power converters.
MAXIMUM RATINGS @ 25°C Unless Specified Otherwise
PART IC (Cont.) V
(BR)CES
V
CE (sat)
(Typ.) Tf(Typ.)
qq
JC
P
D
T
J
NUMBER @ 90°C, A V V ns °C/W W °C
OM6503SC 20 500 2.8 400 1.75 72 150
OM6504SC 30 500 2.8 400 1.00 125 150
3.1 - 141
3.1
500 Volt, 20 And 30 Amp, N-Channel IGBT
In A Hermetic Metal Package
4 11 R2
Supersedes 2 07 R1
INSULATED GATE BIPOLAR TRANSISTOR
(IGBT) IN A HERMETIC TO-258AA PACKAGE
OM6503SC
OM6504SC
SCHEMATIC
.707
.697
.750
.500
.835
.815
.695
.685
.165
.155
.200 TYP.
.550
.530
.270
.240
.045
.035
.140 TYP.
.092 MAX.
.065
.055
.005
Pin 1: Collector
Pin 2: Emitter
Pin 3: Gate
Collector
Emitter
123
CEG
Gate
MECHANICAL OUTLINE
Note: IGBTs are also available in Z-Tab, dual and
quad pak styles. Please call the factory for
more information.
PACKAGE OPTIONS
MOD PAK
6 PIN SIP
3.1
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
OM6503SC - OM6504SC
PRELIMINARY DATA: OM6503SC
IGBT CHARACTERISTICS
Parameter - OFF Min. Typ. Max. Units Test Conditions
V
(BR)CES
Collector Emitter 500 V VCE= 0
Breakdown Voltage I
C
= 250 µA
I
CES
Zero Gate Voltage 0.25 mA VCE= Max. Rat., VGE= 0
Drain Current 1.0 mA V
CE
= 0.8 Max. Rat., VGE= 0
T
C
= 125°C
I
GES
Gate Emitter Leakage ±100 nA VGE= ±20 V
Current V
CE
= 0 V
Parameter - ON
V
GE(th)
Gate Threshold Voltage 2.0 4.0 V VCE= VGE, IC= 250 µA
V
CE(sat)
Collector Emitter 3.0 V VGE= 15 V, IC= 20 A
Saturation Voltage T
C
= 25°C
V
CE(sat)
Collector Emitter 2.8 3.0 V VGE= 15 V, IC= 20 A
Saturation Voltage T
C
= 100°C
Dynamic
g
fs
Forward Transductance 5.0 S VCE= 20 V, IC= 20 A
C
ies
Input Capacitance 1700 pF VGE= 0
C
oes
Output Capacitance 215 pF VCE= 25 V
C
res
Reverse Transfer Capacitance 115 pF f = 1 mHz
Switching-Resistive Load
T
d(on)
Turn-On Time 60 nS VCC= 400 V, IC= 20 A
t
r
Rise Time 240 nS VGE= 15 V, Rg= 47
Switching-Inductive Load
t
r(Volt)
Off Voltage Rise Time .55 µS V
CEclamp
= 400 V, IC= 20 A
t
f
Fall Time .60 µS VGE= 15 V, Rg= 100
t
cross
Cross-Over Time 1.2 µS L = 0.1 mH, Tj= 100°C
E
off
Turn-Off Losses 3.0 mJ
PRELIMINARY DATA: OM6504SC
IGBT CHARACTERISTICS
Parameter - OFF Min. Typ. Max. Units Test Conditions
V
(BR)CES
Collector Emitter 500 V VCE= 0
Breakdown Voltage I
C
= 250 µA
I
CES
Zero Gate Voltage 0.25 mA VCE= Max. Rat., VGE= 0
Drain Current 1.0 mA V
CE
= 0.8 Max. Rat., VGE= 0
T
C
= 125°C
I
GES
Gate Emitter Leakage ±100 nA VGE= ±20 V
Current V
CE
= 0 V
Parameter - ON
V
GE(th)
Gate Threshold Voltage 2.0 4.0 V VCE= VGE, IC= 250 µA
V
CE(sat)
Collector Emitter 3.0 V VGE= 15 V, IC= 30 A
Saturation Voltage T
C
= 25°C
V
CE(sat)
Collector Emitter 2.8 3.0 V VGE= 15 V, IC= 30 A
Saturation Voltage T
C
= 125°C
Dynamic
g
fs
Forward Transductance 8.0 S VCE= 15 V, IC= 30 A
C
ies
Input Capacitance 3500 pF VGE= 0
C
oes
Output Capacitance 250 pF VCE= 25 V
C
res
Reverse Transfer Capacitance 50 pF f = 1 mHz
Switching-Resistive Load
T
d(on)
Turn-On Time 100 nS VCC= 400 V, IC= 30 A
t
r
Rise Time 200 nS VGE= 15 V, Rg= 100
T
d(off)
Turn-Off Delay Time 1.0 µS Tj= 125°C
t
f
Fall Time 2.0 µS
Switching-Inductive Load
T
d(off)
Turn-Off Delay Time 1.0 nS V
CEclamp
= 400 V, IC= 30 A
t
f
Current Fall Time 3.0 µS VGE= 15 V, Rg= 100
L = 0.1 mH, T
j
= 125°C
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