Nokia 2160 Service Manual 14bsh4

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Exploded view

Technical Documentation

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Assembly parts

ITEM Q’TY CODE DESCRIPTION VALUE, TYPE

1 9537025 Chassis 1D23393 BSH–4 2 9537014 Cover 1D21207 BSH–2 3 2 9780014 Antenna cable 4C21537 NME–1 4 23 6150299 Screw M3x8 DIN7985 7 9510105 RF shield 1 2D21209 8 9510158 RF shield 2 2D23397 9 9380227 Antenna label 4D22978 10 9380304 Continuous sheet print. according 4D23551 11 9380304 Continuous sheet print. according 4D22590 C1 0200271 Booster module DB4

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Technical Documentation

V107 4200917 Transistor BC848B/BCW32 npn 30 V 100 mA SOT23 V108 4202456 MosFet IRFR9020 p–ch 50 V 8 A TO252 V109 4202456 MosFet IRFR9020 p–ch 50 V 8 A TO252 V111 4200917 Transistor BC848B/BCW32 npn 30 V 100 mA SOT23 V112 4200917 Transistor BC848B/BCW32 npn 30 V 100 mA SOT23 V113 4110130 Zener diode BZX84 2 % 5.1 V 0.3 W SOT23 V114 4100567 Sch. diode x 2 BAS70–04 70V15 mA SERSOT23 V115 4110130 Zener diode BZX84 2 % 5.1 V 0.3 W SOT23 V116 4200909 Transistor BC858B/BCW30 pnp 30 V 100 mA SOT23 V117 4100567 Sch. diode x 2 BAS70–04 70V15 mA SERSOT23 V118 4200917 Transistor BC848B/BCW32 npn 30 V 100 mA SOT23 V200 4200917 Transistor BC848B/BCW32 npn 30 V 100 mA SOT23 V201 4210096 Transistor BCP54 npn 45 V 1.5 A SOT223 V202 4110130 Zener diode BZX84 2 % 5.1 V 0.3 W SOT23 V203 4110130 Zener diode BZX84 2 % 5.1 V 0.3 W SOT23 V204 4200917 Transistor BC848B/BCW32 npn 30 V 100 mA SOT23 V300 4108647 Pin diode BAR14–1 100 V SOT23 V301 4108647 Pin diode BAR14–1 100 V SOT23 V302 4210096 Transistor BCP54 npn 45 V 1.5 A SOT223 V303 4210096 Transistor BCP54 npn 45 V 1.5 A SOT223 V304 4210096 Transistor BCP54 npn 45 V 1.5 A SOT223 V305 4110130 Zener diode BZX84 2 % 5.1 V 0.3 W SOT23 V306 4110117 Zener diode BZX84 5 % 3.9 V 0.3 W SOT23 V307 4100567 Sch. diode x 2 BAS70–04 70V15 mA SERSOT23 V308 4100567 Sch. diode x 2 BAS70–04 70V15 mA SERSOT23 V400 4200909 Transistor BC858B/BCW30 pnp 30 V 100 mA SOT23 V401 4210010 Transistor BFP183 npn 12 V 65 mA 8 GHz D200 4340024 IC, ROM MCUH8/534 QFP80A D201 4342286 IC, EEPROM 8kx8 bit 250 ns SO28W N100 4346996 IC, regulator 78M05 +5 V TO252AA N200 4309061 IC, reset generator s TL7702AID SO8 N201 434H058 IC, dac 10bit plcc PM–7533 PLCC20 N202 4345540 IC, 2 x op.amp. TLC274BID SO14S N300 4352222 IC, pow.amp. 6 W TDMA X200 5432120 D25–conn angle m metalbracket UNC X201 5422636 Coax–conn sfl d=2.5 50 Ω pcb X202 5422636 Coax–conn sfl d=2.5 50 Ω pcb

7313201 Tape pad 1x12x25mm 2–sided wht 9853961 PC board DB4 117.5x152.0x1.6 d 1/pa

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C208 2307816 Ceramic cap. 47 n 20 % 25 V 0805 C209 2604110 Tantalum cap. 10 µ 20 % 25 V 7.3x4.4x2.8 C210 2307816 Ceramic cap. 47 n 20 % 25 V 0805 C211 2310424 Ceramic cap. 100 p 5 % 50 V 0805 C212 2310752 Ceramic cap. 10 n 20 % 50 V 0805 C213 2310350 Ceramic cap. 27 p 5 % 50 V 0805 C300 2310350 Ceramic cap. 27 p 5 % 50 V 0805 C301 2309852 Ceramic cap. 2.7 p 0.25 % 50 V 0805 C302 2309919 Ceramic cap. 8.2 p 0.25 % 50 V 0805 C303 2309852 Ceramic cap. 2.7 p 0.25 % 50 V 0805 C304 2310350 Ceramic cap. 27 p 5 % 50 V 0805 C305 2309852 Ceramic cap. 2.7 p 0.25 % 50 V 0805 C306 2505164 Electrol. cap. 1000 µ 20 % 40 V 12.5x30mm C307 2307816 Ceramic cap. 47 n 20 % 25 V 0805 C308 2310350 Ceramic cap. 27 p 5 % 50 V 0805 C309 2310350 Ceramic cap. 27 p 5 % 50 V 0805 C310 2310350 Ceramic cap. 27 p 5 % 50 V 0805 C311 2307816 Ceramic cap. 47 n 20 % 25 V 0805 C312 2604093 Tantalum cap. 2.2 µ 20 % 35 V 6.0x3.2x2.8 C313 2604110 Tantalum cap. 10 µ 20 % 25 V 7.3x4.4x2.8 C314 2310350 Ceramic cap. 27 p 5 % 50 V 0805 C315 2310350 Ceramic cap. 27 p 5 % 50 V 0805 C316 2310350 Ceramic cap. 27 p 5 % 50 V 0805 C317 2310350 Ceramic cap. 27 p 5 % 50 V 0805 C318 2310350 Ceramic cap. 27 p 5 % 50 V 0805 C319 2310350 Ceramic cap. 27 p 5 % 50 V 0805 C320 2310544 Ceramic cap. 1.0 n 5 % 50 V 0805 C400 2310544 Ceramic cap. 1.0 n 5 % 50 V 0805 C401 2310544 Ceramic cap. 1.0 n 5 % 50 V 0805 C402 2604110 Tantalum cap. 10 µ 20 % 25 V 7.3x4.4x2.8 C403 2310544 Ceramic cap. 1.0 n 5 % 50 V 0805 C404 2310350 Ceramic cap. 27 p 5 % 50 V 0805 C405 2310350 Ceramic cap. 27 p 5 % 50 V 0805 C406 2309919 Ceramic cap. 8.2 p 0.25 % 50 V 0805 L002 3640301 Chip coil 150 n 20 % Q=30/25 MHz 1210 L100 3606664 Choke 30 µ L101 0164030 Choke 9 µ B200 4500822 Crystal 11.0592 M CL30PF h=3.6mm Z300 4508208 Duplexer AMPS Z309 4508372 Hz–6/a25/TX–filt 824–849 MHz AMPS Z310 4508368 Hz–6/a25/RX–filt 869–894 MHz AMPS V100 4100218 Trans. supr. LDP24A 100 V 30A/40 ms AG V101 4110130 Zener diode BZX84 2 % 5.1 V 0.3 W SOT23 V102 4200917 Transistor BC848B/BCW32 npn 30 V 100 mA SOT23 V103 4202456 MosFet IRFR9020 p–ch 50 V 8 A TO252 V104 4100567 Sch. diode x 2 BAS70–04 70V15 mA SERSOT23 V105 4107027 Zener diode BZX84 5 % 16 V 0.3 W SOT23 V106 4200917 Transistor BC848B/BCW32 npn 30 V 100 mA SOT23

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Technical Documentation

R221 1413603 Chip resistor 47 k 5 % 0.063 W 0805 R222 1413635 Chip resistor 100 k 5 % 0.063 W 0805 R223 1412430 Chip resistor 10 k 5 % 0.063 W 0805 R300 1413924 Chip resistor 220 5 % 0.063 W 0805 R301 1413836 Chip resistor 47 5 % 0.063 W 0805 R302 1413924 Chip resistor 220 5 % 0.063 W 0805 R303 1413836 Chip resistor 47 5 % 0.063 W 0805 R304 1413836 Chip resistor 47 5 % 0.063 W 0805 R305 1412335 Chip resistor 1.0 k 5 % 0.063 W 0805 R306 1411669 Chip resistor 22 5 % 0.063 W 0805 R307 1411669 Chip resistor 22 5 % 0.063 W 0805 R308 1411669 Chip resistor 22 5 % 0.063 W 0805 R309 1411669 Chip resistor 22 5 % 0.063 W 0805 R310 1411669 Chip resistor 22 5 % 0.063 W 0805 R311 1411669 Chip resistor 22 5 % 0.063 W 0805 R312 1412335 Chip resistor 1.0 k 5 % 0.063 W 0805 R313 1412409 Chip resistor 1.5 k 5 % 0.063 W 0805 R314 1412409 Chip resistor 1.5 k 5 % 0.063 W 0805 R315 1412423 Chip resistor 4.7 k 5 % 0.063 W 0805 R316 1413635 Chip resistor 100 k 5 % 0.063 W 0805 R317 1412261 Chip resistor 100 5 % 0.063 W 0805 R318 1413635 Chip resistor 100 k 5 % 0.063 W 0805 R400 1412430 Chip resistor 10 k 5 % 0.063 W 0805 R401 1412423 Chip resistor 4.7 k 5 % 0.063 W 0805 R402 1413924 Chip resistor 220 5 % 0.063 W 0805 R403 1412416 Chip resistor 2.2 k 5 % 0.063 W 0805 R404 1413924 Chip resistor 220 5 % 0.063 W 0805 R405 1411669 Chip resistor 22 5 % 0.063 W 0805 R406 1413924 Chip resistor 220 5 % 0.063 W 0805 C100 2307816 Ceramic cap. 47 n 20 % 25 V 0805 C101 2505164 Electrol. cap. 1000 µ 20 % 40 V 12.5x30mm C102 2307816 Ceramic cap. 47 n 20 % 25 V 0805 C103 2307816 Ceramic cap. 47 n 20 % 25 V 0805 C104 2307816 Ceramic cap. 47 n 20 % 25 V 0805 C105 2307816 Ceramic cap. 47 n 20 % 25 V 0805 C106 2505261 Electrol. cap. 220 µ 20 % 25 V 8.5x11.5 C107 2310544 Ceramic cap. 1.0 n 5 % 50 V 0805 C108 2310424 Ceramic cap. 100 p 5 % 50 V 0805 C109 2310456 Ceramic cap. 180 p 5 % 50 V 0805 C110 2310424 Ceramic cap. 100 p 5 % 50 V 0805 C200 2604110 Tantalum cap. 10 µ 20 % 25 V 7.3x4.4x2.8 C201 2604110 Tantalum cap. 10 µ 20 % 25 V 7.3x4.4x2.8 C202 2307816 Ceramic cap. 47 n 20 % 25 V 0805 C203 2604209 Tantalum cap. 1.0 µ 20 % 16 V 3.2x1.6x1.8 C204 2307816 Ceramic cap. 47 n 20 % 25 V 0805 C205 2604209 Tantalum cap. 1.0 µ 20 % 16 V 3.2x1.6x1.8 C206 2310350 Ceramic cap. 27 p 5 % 50 V 0805 C207 2310350 Ceramic cap. 27 p 5 % 50 V 0805

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Technical Documentation

Parts list of DB4

ITEM CODE DESCRIPTION VALUE TYPE

R077 1412335 Chip resistor 1.0 k 5 % 0.063 W 0805 R100 1412536 Chip resistor 22 k 5 % 0.063 W 0805 R101 1412430 Chip resistor 10 k 5 % 0.063 W 0805 R102 1412536 Chip resistor 22 k 5 % 0.063 W 0805 R103 1412430 Chip resistor 10 k 5 % 0.063 W 0805 R104 1412430 Chip resistor 10 k 5 % 0.063 W 0805 R105 1413635 Chip resistor 100 k 5 % 0.063 W 0805 R106 1412430 Chip resistor 10 k 5 % 0.063 W 0805 R107 1412430 Chip resistor 10 k 5 % 0.063 W 0805 R108 1412423 Chip resistor 4.7 k 5 % 0.063 W 0805 R109 1412536 Chip resistor 22 k 5 % 0.063 W 0805 R110 1412430 Chip resistor 10 k 5 % 0.063 W 0805 R111 1412310 Chip resistor 470 5 % 0.063 W 0805 R112 1412261 Chip resistor 100 5 % 0.063 W 0805 R113 1412409 Chip resistor 1.5 k 5 % 0.063 W 0805 R114 1412430 Chip resistor 10 k 5 % 0.063 W 0805 R115 1412261 Chip resistor 100 5 % 0.063 W 0805 R116 1412261 Chip resistor 100 5 % 0.063 W 0805 R117 1413635 Chip resistor 100 k 5 % 0.063 W 0805 R118 1412335 Chip resistor 1.0 k 5 % 0.063 W 0805 R119 1413635 Chip resistor 100 k 5 % 0.063 W 0805 R120 1413635 Chip resistor 100 k 5 % 0.063 W 0805 R200 1413635 Chip resistor 100 k 5 % 0.063 W 0805 R201 1413603 Chip resistor 47 k 5 % 0.063 W 0805 R202 1413603 Chip resistor 47 k 5 % 0.063 W 0805 R203 1412335 Chip resistor 1.0 k 5 % 0.063 W 0805 R204 1413635 Chip resistor 100 k 5 % 0.063 W 0805 R205 1413635 Chip resistor 100 k 5 % 0.063 W 0805 R206 1413603 Chip resistor 47 k 5 % 0.063 W 0805 R207 1412536 Chip resistor 22 k 5 % 0.063 W 0805 R208 1412430 Chip resistor 10 k 5 % 0.063 W 0805 R209 1412430 Chip resistor 10 k 5 % 0.063 W 0805 R210 1413603 Chip resistor 47 k 5 % 0.063 W 0805 R211 1413603 Chip resistor 47 k 5 % 0.063 W 0805 R212 1413603 Chip resistor 47 k 5 % 0.063 W 0805 R213 1413603 Chip resistor 47 k 5 % 0.063 W 0805 R214 1412423 Chip resistor 4.7 k 5 % 0.063 W 0805 R215 1800673 NTC resistor 15 k 10 % 0.12 W 0805 R216 1412536 Chip resistor 22 k 5 % 0.063 W 0805 R217 1412430 Chip resistor 10 k 5 % 0.063 W 0805 R218 1412536 Chip resistor 22 k 5 % 0.063 W 0805 R219 1412430 Chip resistor 10 k 5 % 0.063 W 0805 R220 1413603 Chip resistor 47 k 5 % 0.063 W 0805

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Technical Documentation

Layout diagrams of DB4

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Technical Documentation

Circuit diagram of transmitter section

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Technical Documentation

Circuit diagram of CPU section

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Technical Documentation

External signals to internal signals

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Technical Documentation

Circuit diagram of receiver section

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Technical Documentation

RF and baseband interconnection and external connections

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Technical Documentation

Power Distribution Diagram

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Block Diagram

Technical Documentation

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Control logic

Control logic consists of the MBUS buffer and BENA receiver. MBUS transmitting is buffered via transistors V111 and V112. R119 and R117 are collector resistors, V114 is a protection diode for the situation when the cpu has no power. This diode prevents the pull–down of the MBUS during power down. R115, C110 and R116 are protection components. V113 is used to prevent negative voltages entering to the rx–line and to limit the max voltage to 5.1 V.

BENA is used to control the ramp start and stop. In handportable side there is an open collector transistor used to pull the line down. The current flowing to the line will switch on the transistor V116 via resistor R111. The transistor will conduct and the OBENA line will go up. The switching point is 6mA and the short circuit current is 8 mA, set with the R111 and R112.

Capasitor C108 and zener V115 are used for overvoltage protection. R113, C109 are used to compensate overshoot due to long BENA line. R112 is on current treshold control. V117 avoids reverse leakage current at booster off state.

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If there is any voltage from the detector, the cpu will shut off the mosfets V108 and V109 and so the bias–supply of the PA module. Then it will inform the handportable about the situation.

Power supply logic

Power supply logic has following subparts: power on logic, overvoltage protection, 5 V regulator for logic, 9 V regulator for the analog section, power switch for PA.

The battery voltage V+ comes through connector X200. The transzorb V100 limits the voltage to max. 31 V. L1 is used to limit transient pulses and C100 and C101 will smooth possible variations of the voltage.

Power on logic consists of transistor V102, resistors R100–R102, C102 and zener V101. The VC line from the connector goes from zero to +5 V, when the handportable is connected. The transistor V102 pulls the mosfet V103 gate to ground and V103 conducts. This will turn on the power line VBATT and provide the voltage to other regulators. R103 is used to keep the mosfet off when the V102 does not conduct.

Technical Documentation

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PA module has its own power switch V108 and V109. CPU can control the switch using the control line TXENA. When the TXENA is high, V107 will conduct and turn on V108 and V109. Coil L101 is used to prevent the rf power feedthrough from the PA module.

Supply voltage to PA module should be under 16V. Overvoltage protection for the module is built using zener V105, diode V104, transistor V106 and resistors R77, R106. When the input voltage rises over 16V the zener V105 start to conduct and open the transistor V106 in V107 base. The V107 stops conducting and shuts down V108 and V109. This will cut off the bias power supply from the PA–module during the overvoltage time.

The CPU can control the 8 V bias voltage of the PA module with PSWITCH control line. When the PSWITCH is high the transistor V118 will conduct and pull down the VB2OFF line. This will shut down the the 8 V bias voltage regulators V303 and V304. The bias voltage switch down can be speeded up by switching the V302 on using the VB2DOWN–line.

The CPU can measure the VBATT voltage via A/D converter using resistive divider R108/R109 and C107 and decide if the voltage level has been out of limits for too long time. It this is so the CPU will inform the handportable about the situation. The voltage limits and the timing values are stored in EEPROM.

Logic 5 V is generated by the regulator N100 and C104–C106. The input to the regulator is taken after mosfet V103 and so the logic voltage is cut off when the VC line goes 0. The average current consumption of the logic is 5.4 mA.

The 9.6 V regulator is used to power the analog section of the booster. It consists of the two zeners V202 and V203, transistor V201, resistor R203 and condensators C200–C202.

The total current consumption when the VC line is off is under 100uA.

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Technical Documentation

EEPROM D201 is connected to ports P5 (data) , P3 ,P1 (address) and P6 (control). Resistors R211–R213 are used to ensure that the control lines are in inactive state during reset.

The CPU has an internal A/D converter wich is used to measure temperature, rf output power and voltage levels.

The reset generator IC TL7702AID and one quarter of the opamp N202 are used to generate 5.06 V reference voltage for the A/D, to NTC resistor R215, and to the D/A converter. The 2.53 V reference voltage from the N200 is amplified to 5.06 V using one quarter of N202 and two resitors R204 and R205. This voltage is fed to the A/D converter reference pin (cpu pin 60). This voltage is also scaled down to 1.58 V with resistors R216, R217 and buffered with one quarter of the N202 for the D/A converter N201.

The CPU uses an D/A converter to set the pin diode current to wanted level. Because only positive voltages were available, the D/A converter N201 is connected to voltage mode. Reference voltage goes to the pin 2 and output is from the pin 19. Because of the operation mode, the reference voltage must not be much over 1.5 V or the linearity suffers. Reference voltage is buffered with one quarter of N202 because the D/A needs a low impedance source.

The D/A converter will output a voltage which is dependent of the digital input word. When the input word is zero the output is zero volts, and when the input is max, the output is at the reference voltage. By changing the input words with CPU the ramp of the output voltage can be controlled. The output voltage is fed via RC filter R222 and C211 to the positive input of one opamp of N202. The time constant of the integrator is 10us and it is used to remove noise from the output voltage of the D/A.

The output power of the PA module is measured with the power detector V308. Voltage from the power detector is buffered in one amplifier of N202. From

there it is fed via resistive divider R218–R220 to the integrator‘s negative input. Divider divides the RF input voltage by 2.66 to scale it to same level as the DA– converter output voltage. Integrator time constant is defined by the capacitor C212 and resistor R221.

Error voltage from the integrator is fed via R223 to the emitter follower V204 and from there to the pindiode attenuator. Emitter follower is used to boost the current drive. C213 is used to attenuate possible rf voltages coming from the pin diode attenuator.

Temperature is measured with NTC resistor R215, resistor R214 and CPU ad– channel 5.

R203 provides biasing for V201. Transistor V201 regulates the voltage with V202 and V203.

If for some reason the PA module has power output without BENA line enabling it, the cpu should switch the RF module off. The power cutoff logic is made with internal A/D converter . One quarter of N202 is continuously monitoring the output voltage of the power detector and feeds it to the A/D converter. When the BENA line is inactive, the cpu reads continuously the power output via A/D.

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C309–C312 are RF bypass capasitors for the PA module’s power lines. C306 is energy storing capasitor for digital mode switcing transients. C317–C319 are RF bypass capasitors for power detector. C316 prevents detected dc voltage shortcircuit to ground via directional coupler.

Microstriplines and coils: Z301 and Z302 are PIN diode attenuator matching lines. Z303 is ground return

line for the PIN diode current and also resonating with C305. Z304 is 50 ohm interconnection line from the attenuator to the PA module. Z305 is 50 ohm interconnection line from the PA module to the directional coupler. Z306 and Z307 forms the directional coupler. Z308 is 50 ohm interconnection line from the coupler to duplexer Z309. Z311 is connecting duplexer Z310 antenna output to duplexer Z309 and the antenna output pin of X202. L2 is compensating the internal capasitances of the PIN–diodes and thus improving the dynamic range of the attenuator. L101 prevents RF harmonics leaking outside of mechanics.

RF power control logic

Technical Documentation

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RF power control logic consist of H8/534 CPU D200 and several IO–devices. Crystal B200 and capacitors C206 and C207 build an oscillator (11.05692 MHz) for the CPU. IC N200, resistor R206 and capacitor C204 are used to start up the CPU. IC N200 constantly monitors +5 V and +9.6 V signals, and if there are any dropouts it will pull down the reset line and keep it there until the voltages have rised again and after adjustable delay made with C203.

Capasitor C204 is used to prevent the oscillations of the reset line. R206 will pull up the reset line because the TL7702 has an open collector output. Resistor R210 is used to pull up the NMI–line.

Communication with the handportable is done via MBUS. Received MBUS signal is fed through protection circuit to the serial input of the processor pin 67. The MBUS signal is inverted via R201–R202 and V200 for the internal timer input in CPU pin 46. The CPU can use this input to determine when the MBUS has no traffic. Signal is inverted because the timer only reacts to rising edge of the signal and it is better to get the indication right from the startbit.

Transmitted power is controlled by the pindiode attenuator in RF section. The attenuation factor is controlled by the CPU via 10 bit D/A converter N201. It is connected to CPU ports P2 and P4. P4 has the 8 lsb address bits and P2 the upper 2 bits. During operation when the CPU finds rising edge in BENA line it will start delay and after the delay has elapsed will start feeding the D/A with rising values until the needed power level has been achieved.

8k*8bit EEPROM is used to store necessary constants for output levels, attenuation factors and timing factors. The CPU can read and write the EEPROM via its ports. To protect the data, EEPROM is divided to two blocks and both have the same data and checksum. The EEPROM is written only during the calibration.

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Power amplifiers

Transmitted constant level signal from handportable TRX is routed via duplexer Z300 to fixed attenuator pad. Then signal goes through the voltage controlled variable PIN diode attenuator. This stage has about 38 dB control range and it takes care of the power ramping and desired power level setting in both analog and digital modes. After that the signal is fed to power amplifier module, which has 37 dB gain. Its maximum output power is +38 dBm. The module can be switched to isolating state by switching off Vbias in PA modules pin 2. This is done with signal VB2OFF. During rampdown PA bias capasitor C313 is discharged with V304 by signal VB2DOWN. During false transmission or with overvoltage the power supply line for PA module is switched off. After PA module a small portion of output power is picked by the power detector with a directional coupler. Power detector is heavily forward biased to increase linearity. Output voltage from detector is limited by means of shunt diode switch. After the directional coupler the signal is fed to the antenna via output duplexer Z309. A separate 8V regulator for PA module bias voltage maintains performance with varying battery voltages.

Technical Documentation

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Semiconductors: V301 and V300 are PIN diodes for variable attenuator. V303 and V304 are reg-

ulator transistors for power amplifier bias voltage, they can be switched off by setting VB2OFF to 0 V. V302 is discharging switch for C313. It can be activated by setting VB2DOWN to 5V. V305 and V306 provide reference voltage for V303 and V304. V308 is Schottky diode pair for power detector rectifier. V307 is Schottky diode pair for detected voltage limiter.

Resistors: R300 ...R302 form fixed PI attenuator. R303 and R304 are matching resistors

in variable attenuator. R312 gives bias current for V303 and V304 base and for zener diodes V305 and V306. R317 is matching resistor for the directional coupler. R315 is power detector’s voltage divider’s upper resistor. R314 is power detector’s voltage divider’s lower resistor, which comes in action only when detected voltage exceeds 0.6 volts thus opening the diodes in V307. R316 is basic load for power detector. R318 and R313 sets 0.3 volt forward bias for power detector diodes. The same potential is fed to other end of R314 to prevent backward biasing during high power levels. R308–R311 are current limiting resitors for the bias regulator transistors. R306, R307 are collector current limiting resistors for V302. R305 is base current limiter for V302.

Capasitors: C300 and C304 are DC block capasitors to prevent PIN–diode current to be

shorted via coil L2. C301–C304 are PIN–diode attenuator matching capasitors. C305 is resonating with Z303 and thus improving attenuator matching to PA module. C307 and C308 are supply bypass capasitors to PA module 8 V bias voltage. C313 smooths the rising and falling transients during power ramping and thus limits the transmitted spectrum spread. C314 and C315 are RF bypass capasitors for V303 and V304.

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Functional Description

Circuit Description

The heart of the control logic is the Hitachi H8/534 microcontroller running

11.0592 MHz. It adjusts the output power accordingly to a given power level and temperature. The controller also monitores TX output power and can switch power off from the power amplifier if any false transmission is detected. Output power is ramped up and down under CPU control, CPU outputs the ramp values to external 10 bit D/A converter.

An external EEPROM is used to store factory tuning values and other data. The data in EEPROM is secured by checksum and double copy.

The CPU also takes care of all the timing functions. When it receives the TX enable signal (BENA), it starts an adjustable delay and then ramps up the TX power to level given by the handportable via MBUS. When the TX enable signal is removed a new adjustable delay is started and at the end of it, TX power is ramped down. Both delays are adjustable and stored in EEPROM. Nominal delay values are 623 µs for ramp up and 123 µs for ramp down.

Technical Documentation

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Receiver

Received signal from antenna connector is routed via RX– duplexer Z310 to low noise linear RF amplifier, which has 14 dB gain and 1.8 dB noise figure. Full gain for booster RX path is specified to ca.7 dB. This way it is possible to maintain transceiver RX sensitivity. The dc power for the amplifier is fed from regulated 9.6 V supply and the amplifier has active biasing to maintain performance during battery voltage variations. After amplification signal is fed to handportabe TRX via pi–attenuator and duplexer Z300.

Semiconductors: V401 is low noise linear RF amplifier. V400 provides constant current to V401. Resistors: R403 feeds base bias for V401. R402 is current sensing resistor for active bias

feedback loop. R400 and R401 sets base voltage for V400 and thus collector voltage for V401. R404 –R406 forms pi–attenuator to set module gain to right value.

Capasitors and microstriplines: C405 is DC blocking capasitor to prevent the base voltage of the V401 to be

shorted to ground via duplexfilter. C406 is matching the output impedance of the V401 to 50 ohm input impedance of duplexer. C404, C403 and C401 are RF bypass capasitors. C400 is stabilizing the active bias feedback loop. C402 is filtering the power supply line. Z402 is part of output impedance matching of the V401. It also feeds dc power to the V401. Z400 and Z403 are 50 ohm transmission lines to connect the amplifier to duplexers. Z401 acts as interconnection line between C405 and the base of V401.

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RF_IN connector, X201

Pin Symbol Description 1 RF_IN Input to input duplexer

2 GND Ground connection

RF_OUT connector, X202

Pin Symbol Description 1 RF_OUT Output from output duplexer

2 GND Ground connection

Technical Documentation

• min./typical/max. +10 dBm/+14 dBm/+16 dBm

• DC connected to ground via duplexer

• min./max. +6.8 dBm/+34.8 dBm

• DC connected to ground via duplexer

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Internal Signals and Connections

Internal signal names between RF and logic modules

TXENA PA module power control signal PSWITCH control line to bias switch transistor TX Serial bus from CPU RX Serial bus to CPU VBATT logic and analog main supply. VBIAS main supply to PA–module PWR_GOOD power supply voltage monitoring line VB2OFF PA–module bias switch off signal OBENA control signal to CPU timer input capture register. RF_POWER output signal from rf–detector PINCURR control signal to pin diode attenuator FRDUPL input signal from input duplexer to rf input amplifier TODUPL output signal from rf amplifier to output duplexer VB2DOWN bias voltage pulldown control.

After handportable is put into the cradle it will display booster connected indication for few seconds.

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Technical Documentation

Technical Specifications

Modes of Operation

The module has two operation modes, analog and digital.

External Signals and Connections

ConnectorNotes Description name

X200 System connector, D25 Control signals from handportable X201 RF_IN, mini–UHF type RF signal from handportable X202 RF_OUT, mini–UHF type RF signal to antenna

Sytem Connector, X200

Pin Symbol Description

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3 GND Battery ground connection

• typical/nominal 0 V

4 +V Battery voltage supply

• min./typical/max. +10.0 V/+12.5 V/+16.0 V

6 VC Main on/off switch voltage

• min./max. 0 V/+5 V

• >5 V switches booster on

7 BENA Control signal to switch booster transmitter on/off

• min./typical/max. 0 mA/6 mA/8 mA

• current controlled, 200 Ω to +3 V, Switch on

current 6 mA, max short circuit current 8 mA

12 M2BUS Communication bus to booster

• 100k to +5 V, 200 Ω in series

16 +V Battery voltage supply

• min./typical/max. +10 V/+12.5 V/+16.0 V

17 GND Battery ground connection

• typical 0 V

24 GND Battery ground connection

• typical 0 V

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Basic Specifications

Cellular system North American Dual–mode TX frequency band 824.010,...848.970 MHz RX frequncy band 869.010,...893.970 MHz Power class 1 Maximum output power 3 W Power supply voltage 10.5,...16 V Current consumption, stand by < 0.1 mA Current consumption, analog mode trans. 2.5 A (full power) Current consumption, digital mode trans. 1.5 A (full power)

List of Submodules

The booster does not contain separate submodules. It can be divided into receiver, power amplifier, power control logic and power supply logic.

Technical Documentation

–

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Technical Documentation

Introduction

Technical Summary

RF booster is an accessory device to increase handportable tranceiver transmit power. Handportable is a power class IV transceiver. Booster is built for power class I. Modes of operation are analog and digital. Booster contains also a RF preamplifier for handportable receiver.

Necessary control logic is included. Main functions of the logic are: TX power control and compensation. Control logic is conneted to handportable via MBUS and two control lines. TX power ramp–up and ramp–down timing is controlled using control line BENA.

List of Modules and parts of RF booster

Dual mode RF booster BSH–4 0500188 RF booster module DB4 0200271 Assembly parts MBSH–4 0260286 Booster cable SCE–8 9780091 D25 extension cable SCE–9 9780083 RF extension cable XRH–1 9780039 Mounting bracket booster MBM–3 0700016

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BSH–4

MBM–3

SCE–8

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Introduction 14–2 Technical Summary 14–2 List of Modules and parts of RF booster 14–2 Basic Specifications 14–3 List of Submodules 14–3 Technical Specifications 14–4 Modes of Operation 14–4 External Signals and Connections 14–4 Internal Signals and Connections 14–5 Functional Description 14–6 Circuit Description 14–6 Block Diagram 14–12 Power Distribution Diagram 14–13 RF and baseband interconnection and external connections 14–14 Circuit diagram of receiver section 14–15 External signals to internal signals 14–16 Circuit diagram of CPU section 14–17 Circuit diagram of transmitter section 14–18 Layout diagrams of DB4 14–19 Parts list of DB4 14–20 Exploded view 14–24 Assembly parts 14–24

Technical Documentation

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Nokia 2160 Service Manual 14bsh4

Specifications and Main Features

Frequently Asked Questions

User Manual

Exploded view

Assembly parts

Parts list of DB4

Layout diagrams of DB4

Circuit diagram of transmitter section

Circuit diagram of CPU section

External signals to internal signals

Circuit diagram of receiver section

RF and baseband interconnection and external connections

Power Distribution Diagram

Block Diagram

Functional Description

Technical Specifications

Introduction

Contents