Nokia 2140 System Module DS9 08

SYSTEM MODULE DS9
NHK–1
9712OJ Technical Documentation

Contents of System Module DS9

System module DS9 8–2 Introduction 8–2 Technical section 8–2 External and internal connectors 8–2 Internal signals between RF and ASIC 8–5 Internal signals between RF and RFI 8–6 Baseband block 8–7 Interconnection diagram 8–7 Technical specifications 8–7 Functional descriptions 8–8 Names of functional blocks 8–10 RF block 8–26 Functional description 8–26 Block diagram of baseband 8–29 Block diagram of RF 8–30 Power distribution diagram 8–31 Connections between system and RF blocks 8–32 Parts list of DS9 8–33
8–1
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Circuit Diagram of DS9; System Blocks A3/8–1 Circuit Diagram of DS9; CPU and Memories (Version 4.5 edit 65) A3/8–2 Circuit Diagram of DS9; Power Supply IC & Battery Charg. Unit A3/8–3 Circuit Diagram of DS9; Audio Codec IC A3/8–4 Circuit Diagram of DS9; DSP, Clock Generator & Memories A3/8–5 Circuit Diagram of DS9; ASIC IC (Version 4.5 edit 68) A3/8–6 Circuit Diagram of DS9; RFI IC (Version 4.5 edit 40) A3/8–7 Circuit Diagram of DS9; RF Receiver A3/8–8 Circuit Diagram of DS9; RF Receiver (Version 4.3 edit 52) A3/8–9 Circuit Diagram of DS9; RF Transmitter A3/8–10 Circuit Diagram of DS9; RF Transmitter (Version 4.3 edit 94) A3/8–11 Layout Diagrams of DS9 Side 1 A3/8–12 Layout Diagrams of DS9 Side 2 A3/8–13 Layout Diagrams of DS9 Side 1 (Version 13) A3/8–14 Layout Diagrams of DS9 Side 2 (Version 13) A3/8–15

SYSTEM MODULE DS9

NHK–1
System module DS9
Related documentation

Introduction

DS9 is the baseband/RF module NHK–1 cellular tranceiver. The DS9 module carries out all the system and RF functions of the tranceiver. System module DS9 is designed for a handportable phone, that operate in PCN system.
Technical section
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All functional blocks of the system module are mounted on a single multi layer printed circuit board. The chassis of the radio unit contains separating walls for baseband and RF. All components of the baseband are surface mountable. The connections to accessories are fed through the bottom connector of the radio unit. The connections to user interface –module (UIF) are fed through a flex connector. There is no physical connector between RF and baseband.
External and internal connectors
The system module has two connector, external bottom connector and internal UIF module connector.
SYSTEM MODULE DS9
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Bottom connector X100
Antenna connector
2
1
16
System connector
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4
Battery connector
3
2
1
4
Charging connector
X100
9
18
3
30
12
X196
UIF module connector
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1
D0000323
8–3
System connector
Pin: Name: Description: 1, 9 GND Digital ground
2 MIC/JCONN External audio input from accessories or
3 AGND Analog ground for accessories. 4 TDA Transmitted DBUS data to the accessories. 5 M2BUS Serial bidirectional data and control between
6 HOOK/RXD2 HOOK indication. The phone has a 100 k
7 PHFS/TXD2 Handsfree device power on/off, data to flash
8, 16 VCHAR Battery charging voltage. 10 EAR/HFPWR External audio output to accessories or
handsfree microphone. Multiplexed with junction box connection control signal.
the handportable and accessories.
pull–up resistor.
programming device.
handsfree speaker. 11 DSYNC DBUS data bit sync clock 12 RDA DBUS received data from the accessories 13 NC No connection 14 VF Programming voltage for FLASH. 15 DCLK DBUS data clock
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Battery connector
Pin: Name: Description: 1 GND Ground
2 TBAT Battery temperature 3 BTYPE Battery type 4 VBATT Battery voltage
Charging connector
Pin: Name: Description: 1 VCHAR Battery charging voltage
2 GND Ground 3 VCHAR Battery charging voltage 4 GND Ground
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Antenna connector
Pin: Name: Description: 1 RF EXT External antenna signal
2 GND Ground
UIF module connector X196
Pin: Name: Description: 1 VL1 Logic supply voltage 4.65 V
2, 29 GND Ground 3, 30 VBATT Battery voltage 4 BACKLIGHT Backlights on/off 5 – 11 UIF(0;6) Lines for keyboard read and LCD controller 12 MIC ENA Microphone bias enable 13 – 16 COL(0;3) Lines for keyboar read 17 CALL LED Call LED enable 18 MICP Microphone (positive node) 19 MICN Microphone (negative node) 20 EARP Earpiece (negative node) 21 EARN Earpiece (positive node) 22 BUZZER PWM signal buzzer control
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23 XPWRON Power key (active low) 24 VA1 Analog supply voltage 4.65 V 25 SIMCLK Clock for SIM data 26 SIMRESET Reset for SIM 27 VSIM SIM voltage supply voltage 28 SIMDATA Serial data for SIM
Internal signals between RF and ASIC
Symbol: Description: Values: SCLK Synthesizer clock
load impedance:
• frequency:
SDATA Synthesizer data
load impedance:
data rate frequency:
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10 k
3.25 MHz
10 k
3.25 MHz
SENAR RX synthesizer enable
VHF PLL contr. disabled:
VHF PLL activated:
current:
SENAT TX synthesizer enable
UHF PLL contr. disabled:
• UHF PLL activated:
• current:
RXPWR RX supply voltage on/off
RX supply voltage on:
• RX supply voltage off:
• current:
SYNTHPWR Supply voltage on/off
RF regulators on:
• RF regulators off:
• current:
TXPWR TX supply voltage on/off
TX supply voltage on:
• TX supply volatge off:
• current:
4.5...4.65...4.8 V
0...0.2...0.7 V 50 µA
4.5...4.65...4.8 V
0...0.2...0.7 V 50 µA
4.5...4.65...4.8 V
0...0.2...0.7 V
0.5 mA
4.5...4.65...4.8 V
0...0.2...0.7 V
1.0 mA
4.5...4.65..4.8 V
0...0.2...0.7 V
0.5 mA
TXP TX enable
transmitter power enable:
• transmitter power disable:
CLKIN 26 MHz clock to ASIC
4.5...4.65...4.8 V
0...0.2...0.7 V
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Internal signals between RF and RFI
Symbol: Description: Values: AFC Automatic frequency control voltage
voltage min/max:
• resolution:
• load impedance (dynamic):
TXC TX transmit power control voltage
voltage range min/max:
• impedance:
TXQP,TXQN Differential TX quadrature signal
differential voltage swing:
• d.c. level:
• load impedance:
TXIP,TXIN Differential TX inphase signal
differential voltage swing:
• d.c. level:
• load impedance:
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0.35...4.35 V 11 bits 10 k
0.3...4.2 V 10 k
1.15...1.2...1.25 V
PP
2.30...2.35...2.40 V 30 k
1.15...1.2...1.25 V
PP
2.30...2.35...2.40 V 30 k
PDATA0 Parallel AGC data
reduced front end gain:
• normal front end gain:
• current:
PDATA1 Parallel AGC data
AGC 3 dB reduction:
• normal front end gain:
• current:
PDATA2 Parallel AGC data
AGC 6 dB reduction:
• normal front end gain:
• current:
PDATA3 Parallel AGC data
AGC 12 dB reduction:
• normal front end gain:
• current:
PDATA4 Parallel AGC data
AGC 24 dB reduction:
• normal front end gain:
• current:
4.5...4.65...4.8 V
0...0.2...0.7 V
0.1 mA
4.5...4.65...4.8 V
0...0.2...0.7 V 10 µA
4.5...4.65...4.8 V
0...0.2...0.7 V 10 µA
4.5...4.65...4.8 V
0...0.2...0.7 V 10 µA
4.5...4.65...4.8 V
0...0.2...0.7 V 10 µA
PDATA5 Parallel AGC data
AGC 12 dB reduction:
• normal front end gain:
• current:
4.5...4.65...4.8 V
0...0.2...0.7 V 10 µA
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RXQ RX quadrature signal
RXI RX inphase signal

Baseband block

The purpose of the baseband module is to control the phone and process audio signals to and from RF. The module also controls the user interface.
Interconnection diagram
Technical specifications
There are three different operation modes:
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output level:
• source impedance:
output level:
• source impedance:
8–7
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25 mV 470
25 mV 470
PP
PP
– Active mode – Idle mode – Power off mode In the active state all the circuits are supplied with power and part of the mod-
ule might be in idle state. The module is usually in the idle mode when there is no call. In the idle mode
circuits are reset, powered down and clocks are stopped or the frequency re­duced.
In power off mode only the circuits needed for power up are supplied with power.
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Functional descriptions
Clocking sceme
DSP Clock
60.2 MHz differential sine
ear
AUDIO CODEC
wave
mouth
oscillator
DSP
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RFI Clock 13 MHz
Sleep Mode: 135.4kHz
enable
RFI
ASIC
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RF System Clock
26 MHz
VCTCXO
SIMCLKSIMCLK
Codec Sync Clock
8 kHz
DBUSCLK 512kHz
DBUSSYNC 8kHz
All of the clock outputs can be disabled/enabled. DSP uses differential sinusoi­dal clock. DSP–clock buffer can be enabled/disabled.
Codec Main Clock and data Transfer clock
512kHz
3.25 / 1.625 MHz
MCU Clock
26 MHz
MCU
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Reset and power control
reset in
DSP
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RFI
Reset Out Reset Out
ASIC
Vcc Reset in
resetreg
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SIMReset
PSL+
VL1
XRES reset in
XPWRON
XPwrOff
approx 2Hz
The supply power is switched on by PWR key on keyboard. All devices are powered up at the same time by PSL+.
PSL+ supplies the reset to ASIC at power up. ASIC starts the clocks to DSP and MCU. After some time ASIC releases the resets to all circuitry. Power up reset resets MCU and RFI. DSP has own, independent reset from the asic.
For powering of the phone, the user pushes PWR–key. MCU detects that it is pushed. After that the MCU cuts the eventual ongoing call, exits all tasks, acts dead to the user and leaves PSL+ watchdog without resets. After power–down delay PSL+ cuts the supply voltage from all the circuitry.
XPWRON
MCU
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Watchdog system
XPWROFF
PSL
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reset
DSP
1
5
2
POWER
3
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ASIC
4
reset
MCU
Normal operation:
1. MCU tests DSP
2. MCU updates ASIC watchdog timer (> 2Hz)
3. MCU pulses the XPWROFF input on the PSL+ (about 2Hz) Failed operation:
4. ASIC resets MCU and DSP (after about 0.5 sec failure)
5. PSL+ switches the power off (after 1.5 sec failure)
Names of functional blocks
Name: Function: CTRLU Control unit for the phone
PWRU Power supply DSPU Digital signal processing block AUDIO Audio coding ASIC EDSA –asic RFI RF –baseband interface
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CTRLU
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The control block provides a microcomputer unit (MCU) and it’s environment. The environment consists of three memory circuits (FLASH, SRAM, EEPROM), 20 bit address bus and 8 bit data bus.
Main Features of the CTRLU block: MCU functions: – system control – communication control – user interface – authentication – RF monitoring – power up/down control – accessory monitoring – batttery monitoring and charging control – self–test and production testing – flash loading
Main components of CTRLU
– Hitachi H8/536
H8/536 is a CMOS microcomputer unit (MCU) comprising a CPU core and on–chip supporting modules with 16 bit architecture. The data bus to outside world has 8 bits.
– 512 k x 8 bit FLASH memory
– 100 ns maximum read access time. – contains the main program code for the MCU; part of the DSP
program code locates also in FLASH.
– In teh product two 256 k x 8 bit FLASH memories will be used
ASIC can address also two 4 Mbit or one 8 Mbit memories.
– 32 k x 8 bit SRAM memory
– 100 ns maximum read access time.
– 8 k x 8 bit EEPROM memory
– 150 ns maximum read access time. – contains user defined information.
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Input signals of CTRLU
Name(from): Description: VL1(PWRU) Power supply voltage for CTRLU block
VREF(PWRU) Reference voltage for MCU A/D converter VBATDET(PWRU) Battery voltage detection VC(PWRU) Charger voltage monitoring EROMSELX(ASIC) Chip select for the EEPROM memory ROMSELX(ASIC) Chip select for the FLASH memory ROM2SELX(ASIC) Chip select for the 2nd FLASH memory RAMSELX(ASIC) Chip select for the SRAM memory RESETX(ASIC) Reset signal for MCU NMI(ASIC) Non–maskable interrupt request MCUCLK(ASIC) Main clock for MCU
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IRQX(ASIC) Interrup request PCMCDO(AUDIO) Audio codec control data receiving TRF(RF) RF module temperature detection VF(syst.conn.) Programming voltage for FLASH memory RXD2_HOOK The use of handsfree monitoring
(syst.conn.) FLASH programming data input on the production line TBAT(batt.conn.) Battery temperature detection BTYPE(batt.conn.) Battery size identification JCON(syst.conn.) Junction box connection identification
Output signals of CTRLU
Name(to): Description: XPWROFF(PWRU) Power off control, PSL+ watchdog reset
PWM(PWRU) Charger on/off control WSTROBEX(ASIC) MCU write strobe RSTROBEX(ASIC) MCU read strobe MCUAD(19:0)(ASIC)20 bit MCU address bus MBUSDET(ASIC) MBUS activity detection PCMCLK(AUDIO) Clock for audio cedec control data transfer PCMCDI(AUDIO) Audio codec control data transmitting XSELPCMC(AUDIO)Chip select for audio codec
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TXD2_PHFS Power on/off control for HF device, verification output (syst.connector) of the programmed data of FLASH during programming
CALL_LED(UIF) Call ’coming’ indicator light control BACKLIGHT(UIF) LCD and display backlight on/off control BUZZER(UIF) Buzzer signal
Bidirectional signals of CTRLU
Name(to/from): Description: MCUDA(7;0)(ASIC) MCU’s 8 bit data bus
M2BUS Asyncronous serial data bus
Block description of CTRLU
– MCU – memories
MCU has a 20 bits wide address bus A(19:0) and an 8–bit data bus with memories. The address bits A(19:16) are used for chip select decoding. The decoding is done in EDSA–asic.
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On the Hitachi HD647536 internal memory map there is the follow­ing:
00000 – 0F67F 62k bytes internal ROM
0F680 – 0FE7F 2k bytes internal RAM
0FE80 – 0FFFF 384 bytes registers
External memory map is the following:
10000 – 17FFF 32k bytes RAM
20000 – 21FFF 8k bytes E
30000 – 300FF 256 bytes ASIC
40000 – 7FFFF 256k bytes FlashROM
80000 – BFFFF 256k bytes FlashROM
– CTRLU – PWRU
MCU controls the watchdog timer in PSL+. It sends a positive pulse at approximately 2 Hz to XPWROFF pin of the PSL+ to keep the power on. If MCU fails to deliver this pulse, the PSL+ will remove power from the system. MCU controls also the charger on/off switch­ing in the PWRU block. When power off is requested MCU leaves PSL+ watchdog without reset. After the watchdog has elapsed PSL+ cuts off the supply voltages from the phone.
2
PROM
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– CTRLU – ASIC
MCU and ASIC have a common 8 bit data bus and a 9 bit address bus. A(4:0) are used for normal addressing whereas bits A(19:16) are decoded in ASIC to chip select inputs for CTRLU memories. ASIC controls the main clock, main reset and interrupts to MCU. The internal clock of MCU is half the MCUCLK clock speed. RESETX re­sets everything in MCU except the contents of the RAM. IRQX is general purpose interrupt request line from ASIC. After IRQX request the interrupt register of asic is read to find out the reason for inter­rupt. NMI–interrupt is used only to wake up MCU from software standby mode.
– CTRLU – DSPU
MCU and DSP communicate through ASIC. ASIC has MCU–mailbox and DSP–mailbox. MCU writes data to DSP–mailbox where DSP can only read the incoming data. In MCU–mailbox data transfer direction is opposite.
– CTRLU – AUDIO
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When the the chip select signal XSELPCMC goes low, MCU writes or reads control data to or from the speech codec at the rate defined by PCMCLK. PCMCDI is output data line from MCU to codec and PCMCDO is input data line from codec to MCU.
– CTRLU – RF/BATTERY monitoring
MCU monitors RF and battery functions (BTEMP, BSI ,VBATDET,VC and TRF) with the internal 8 channel 10 bit AD converter.
– CTRLU – keyboard and LCD driver interface
MCU and user interface communication is controlled through ASIC.
– CTRLU – ACCESSORIES
M2BUS is used to control external accessories. This interface can be used also to factory testing and service and maintenance purposes.
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PWRU
The power block makes the supply voltages for the baseband and includes also the charging electronics.
Main components of PWRU
– PSL + ASIC
Generates the voltages, has power switch, charger and battery detection and watchdog.
– Transistor BCP69–25 and schottky STPS340U
The charging current is passed through these components.
– Transistor BCX51
VL regulators of PSL+ external output transistors.
Input signals of PWRU
Name(from): Description:
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XPWRON(UIF) PWR on swith XPWROFF(CTRLU) Power off control VBATT(syst.conn.) Battery voltage PWM(CTRLU) Charger on/off control VCHAR(syst.conn.) Charging voltage
Output signals of PWRU
Name(from): Description: XRES(ASIC) Master reset
VL1(CTRLU,ASIC, Logic supply voltage, max 150 mA RFI,UIF)
VL2(DSPU) Logic supply voltage, max 150 mA VA1(AUDIO,UIF) Analog supply voltage, max 40 mA VA2(RFI) Analog supply voltage, max 80 mA
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Block description of PWRU
The PSL+–IC produces the supply voltages: Name: Description:
2 * VL 150 mA for logic VA1 40 mA for audios VA2 80 mA for RFI VREF 5 mA reference It also has internal watchdog, voltage detection and charger detection func-
tions. The watchdog will cut the output voltages if it is not resetted once in about 0.7 seconds. The voltage detector resets the phone if the battery voltage falls below 4.8 V (±0.2 V). The charger detection starts the phone if it is in pow­er–off when the charging voltage is applied.
The charging electronics is controlled by the MCU. When the charging voltage is applied to the phone while the phone is powered up, the MCU detects it and starts controlling the charging.
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If the phone is in power–off state, the PSL+ will detect the charging voltage and start the phone. If the battery voltage is high enough the reset will be released and the MCU will start controlling the charging.
If the battery voltage is too low the phone is in reset and charging control cir­cuitry will pass the charging current to the battery. When the battery voltage has reached 5.25 V (±0.2 V) the reset will be removed and the MCU starts control­ling the charging. This all is invisible to the user.
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DSPU
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Main interfaces of the DSP: – MCU via ASIC mailbox – ASIC – audio codec – data bus interface (DBUS) for accessories – digital audio interface (DAI) for type approval measurements Main features of the DSP block: – speech processing
– speech coding/decoding
– RPE–LTP–LPC (Regular pulse excitation long term
prediction linear predictive coding) – voice activity detection (VAD) for discontinuous transmission
(DTX)
8–17
– comfort noise generation during silence – acoustic echo cancellation
– channel coding and transmission
– block coding (with ASIC) – convolutional coding – interleaving – ciphering (with ASIC) – burst building and writing it to ASIC
– Reception
– reading the A/D conversion results from ASIC – impulse response calculation – matched filtering – bit detection (with Viterbi on ASIC) – deinterleaving of soft decisions – convolutional decoding (with Viterbi) – block decoding (with ASIC)
– Adjacent cell monitoring
– signal strenght measurements – neighbour timing measurements – neighbour parameter reception
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– control functions
– RF controls
– frame structure control
ASIC)
– test functions
– functions for RF measurements – debugging functions for product development
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– synthesizer control – power ramp programming – automatic gain control (AGC) – automatic frequency control (AFC)
– controlling the operations during a TDMA frame (with
– controlling the multiframe structure – channel configuration control
8–18
Main components of DSPU
– AT&T DSP 1616 – SRAMs for DSP external memory
Input signals of DSPU
Name(from): Description: VL2(PWRU) Logic supply voltage, max 150 mA
DSPCLKEN(ASIC) Clock enable for DSP clock oscillator circuit DSP1RSTX(ASIC) Reset for the DSP PCMDATRCLKX PCM data input clock
(ASIC) DBUS data output clock CODEC_CLK PCM data output clock PCMOUT(AUDIO) Received audio in PCM format DBUSCLK DBUS data output clock DBUSSYNC DBUS data bit sync clock RDA DBUS received data INT0, INT1(ASIC) Interrupts for the DSP PCMCOSYCLKX PCM data bit sync clock
(ASIC)
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Output signals of DSPU
Name(to): Description: PCMIN(AUDIO) Transmitted audio in PCM format
IOX(ASIC) I/O enable, indicates access to DSP address space RWX(ASIC) Read/write X DSPAD(16;9)(ASIC) Address bus and control signals DBUSDET(ASIC) DBUS activity detection
Bidirectional signals of DSPU
Name(from/to): Description: DSPDA(15;0)(ASIC) 16 bit data bus
Block description of DSPU
Control unit communicates with DSP circuitry trough a mailbox in the ESA asic. DSP communicates with PCM codec and DBUS with SIO serial busses. DSP controls RFI through the ESA.
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In transmit mode DSP codes the speech and routes the resulting transmit slots to ESA. ESA asic controls timing, and at specified intervals sends these bits to RFI for DA conversion.
In digital receive mode RFI AD converts IF signal from RF unit under the con­trol of ESA. DSP controls ESA and receives the converted bits. After channel and speech decoding, bits are converted to an analog signal in the PCM codec, routed and fed to the earpiece.
DSP controls RF trough the ESA asic, where all necessary timing functions are implemented, and control IO lines are provided for eg. synte loading.
All clocks and timing are generated from the RFC clock. DSP emulator can be connected to DSP pins TCK,TMS,TDO,TDI,GND and
VDD.
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AUDIO
The block consists of audio codec with some peripheral components. The co­dec includes microphone and earpiece amplifier and all the necessary switches for routing. The controlling of the codec is done by the MCU. The PCM data comes from and goes to DSP.
Main components of AUDIO
– Audio codec ST5080
Includes e.g. PCM codec, audio routing switches, microphone and earpiece amplifiers for 2 connections (internal and external devices) and DTMF generator.
Input signals of AUDIO
Name(from): Description: VA1(PWRU) Analog supply voltagee, max 40 mA
PCMIN(DSPU) Received audio in PCM format
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SYNC(ASIC) 8 kHz frame sync CODEC_CLK(ASIC) 512 kHz codec main clock PCMCDI(CTRLU) Audio codec control data PCMCLK(CTRLU) Clock for audio codec control data transfer XSELPCMC Audio codec chip select
(CTRLU) HFMIC(syst.conn.) External microphone MICN,MICP(UIF) Differential microphone signal
Output signals of AUDIO
Name(to): Description: PCMOUT(DSPU) Transmitted audio in PCM format
PCMCDO(CTRLU) Audio codec control data MIC_EN(UIF) Microphone enable EXTEAR(syst.conn.) External received audio EARN,EARP(UIF) Internal received audio JCONN(CTRLU) Junction box connected signal (multiplexed with HFMIC)
Block description of AUDIO
The audio codec communicates with the DSP (analog speech) through a SIO (signals: PCMIN, SYNC, CODEC_CLK and PCMOUT) . MCU controls the au­dio codec functionality through a separate SIO (signals: PCMCDO, PCMCDI, PCMCLK and XSELPCMC).
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ASIC
The ASIC takes care of the following functions: – interface between MCU and UIF – interface between MCU, DSP and RFI – hardware accelerator functions to DSP: Viterbi, ... – clock generation and disable/enable – RF–controls – UIF–interface – timers – M2BUS interface – SIM interface
Main components of ASIC
– ESA –ASIC
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– RFC –buffer
Input signals of ASIC
Name(from): Description: VL1(PWRU) Logic supply voltage ax 150 mA
IOX(DSPU) I/O enable, indicates access to DSP address space RWX(DSPU) Read/write X WSTROBEX MCU’s write strobe
(CTRLU) RSTROBEX MCU’s read strobe
(CTRLU) RFC(RF) Reference clock from VCTCXO XRES(PWRU) Master reset DSPAD(16;0)(DSPU)Address bus and control signals MCUAD(19;16,4;0) MCU’s address bus
(CTRLU)
Inverter buffer stage is used as a buffer for VCTCXO–clock.
DAX(RFI) Data acknowledge MBUSDET(CTRLU) MBUS activity detection DBUSDET(DSPU) DBUS activity detection
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Output signals of ASIC
Name(to): Description: INT0,INT1(DSPU) Interrupts for DSP
NMI(CTRLU) Not maskable interrup request IRQX(CTRLU) Interrupt request RESETX Master (power up) reset
(CTRLU,RFI) DSP1RSTX(DSPU) Reset for the DSP SIMRESET Reset for the SIM WRX(RFI) Write strobe RDX(RFI) Read strobe RFIAD(3;0)(RFI) RFI address bus SCLK(RF) Synthesizer load clock
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SDATA(RF) Synthesizer load data SENAR(RF) Receiver synthesizer enable SENAT(RF) Transmit synthesizer enable RXPWR(RF) RX circuitry power enable TXPWR(RF) TX circuitry power enable SYNTHPWR(RF) Synthesizer circuitry power enable TXP(RF) Transmit enable MCUCLK(CTRLU) Main clock for MCU DSPCLKEN(DSPU) DSP clock circuit enable RFICLK(RFI) RFI master clock RFI2CLK(RFI) RFI sleep clock CODEC_CLK PCM data clock
(DSPU,AUDIO) PCMDATRCLKX Inverted PCM data clock, used as input clock for
(DSPU) codec and DBUS interface SYNC(AUDIO) Bit sync clock PCMCOSYCLKX Bit sync clock, inverted
(DSPU) DCLK(DSPU) DBUS data clock DSYNC(DSPU) DBUS bit sync clock SIMCLK(UIF) SIM data clock VSIM(UIF) SIM power control
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ROMSELX(CTRLU) Chip select for the FLASH memory ROM2SELX Chip select for the second FLASH memory
(CTRLU) EROMSELX Chip select for the EEPROM memory
(CTRLU) RAMSELX(CTRLU) Chip select for the SRAM memory COL(3;0)(UIF) Lines for keyboard column write
Bidirectional signals of ASIC
Name(from/to): Description: DSPDA(15;0) 16 bit data bus
(DSPU) MCUDA(7;0) MCU’s 8 bit data bus
(CTRLU) RFIDA(11;0)(RFI) 12 bit data bus
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UIF(6;0)(UIF) LCD controller control and keyboard read bus SIMDATA(UIF) Serial data to SIM
Block description of ASIC
RFC buffer buffers the 26 MHz clock from VCTCXO to ASIC. In ASIC that clock is further buffered and divided for MCU, RFI and audio codec (main and sync clocks). The clock outputs can be disabled in order to save current when the clock is not needed. Also DSP oscillator can be stopped.
SYSTEM MODULE DS9
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RFI
The block consists of RFI–ASIC and its reference voltage generator. This block is an interface between RF and baseband. The block has the following func­tions:
– IF receiving and A/D conversion – I/Q separation – I and Q transmit and D/A conversion – AFC D/A – TXC – digital AGC control through PDATA The RFI is connected to ESA with a 12–bit databus. The registers in RFI are
accessed using 4 address bits.
Main components of RFI
– RFI –ASIC
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– 4.096 V external voltage reference LM4040 for RFI
Input signals of RFI
Name(from): Description: VL1(PWRU) Logic supply voltage, max 150 mA
VA2(PWRU) Analog supply voltage, max 80 mA RESETX(PWRU) Master (power up) reset RFIAD(3;0)(ASIC) RFI address bus RDX(ASIC) Read strobe WRX(ASIC) Write strobe RFICLK(ASIC) RFI master clock RFI2CLK(ASIC) RFI sleep clock
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Output signals of RFI
Name(to): Description: DAX(ASIC) Data acknowledge
AFC(RF) Automatic frequency control voltage TXC(RF) TX transmit power control voltage TXQP,TXQN(RF) Differential TX quadrature signal TXIP,TXIN(RF) Differential TX inphase signal PDATA(5;0)(RF) Parallel AGC data RXQ(RF) RX quadrature signal RXI(RF) RX inphase signal
Bidiractional signals of RFI
Name(to): Description:
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RFIDA(11;0)(ASIC) 12 bit data bus
SYSTEM MODULE DS9
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RF block

The RF block carries out all the RF functions of the transceiver. The RF block works in PCN (DCS11800) system.
Functional description
Regulators
There are two regulators in the RF unit. The 1st regulator is used for the syn­thesizers and the negative bias generator. The 2nd regulator is used for te oth­er RF circuits. The regulators regulate the battery voltage to the fixed 4.75 V level. The receiver, synthesizer and transmitter circuits can be switched ON and OFF separately. Switching sequence timing depends on the operation mode of the phone.
Power distribution
All currents in power distribution diagram are peak currents. Activity percent­ages are in SPEECH mode 22.5 % for RXPWR , 15.8 % for TXPWR and 100 % for SYNTHPWR. In IDLE mode activities are 0.36 %, 0.0 % and 1.61 % respec­tively. The current of each block is controlled independently and for example TXPWR and RXPWR are not on at the same time. Average current consump­tion in SPEECH mode is 340 mA and in IDLE mode 22 mA for whole tranceiver.
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Battery
6.0 V
Regulator Regulator
4.75 V4.75 V
45 mA 5 mA 60 mA 60 mA
UHF PLL VHF PLL Buffers
Negat. bias generator
RF LNAs IF amplifiers
Mixers AGC amplifiers
Modulator TX buffers Power control
VCTCXO
Switch
Power amplifier
2 mA
850 mA
VREF
SYNTHPWR
TXP
TXPWR RXPWR
SYSTEM MODULE DS9
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Control signals
In the following table (NO TAG) the RF current consumption can be seen with different status of the control signals. The VCTCXO current is not included in the results.
SYNTHPWR:RXPWR: TXPWR: TXP: Typ. load current: Notes: L L L L 0.05 mA Leakage current
H L L L 51 mA Synthesizer active H H L L 110 mA Reception H L H L 110 mA TX active H L H H 960 mA Transmission
Receiver
The received RF signal from the antenna is fed via a duplex filter to the receiver unit. The signal is amplified by a discrete low noise preamplifier. The gain of the amplifier is controlled by the AGC control line (PDATA0). The nominal gain of 10 dB is reduced in the strong field condition about 28 dB. After the preamplifi­er the signal is filtered by a three pole ceramic RF filter. The filter rejects spuri­ous signals coming from the antenna and spurious emissions coming from the receiver unit.
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The filtered signal is amplified by a transistor amplifier and down converted by a passive diode mixer. The frequency of the first IF is 487 MHz. The first local signal is generated by the UHF synthesizer. The IF signal is amplified and then it is filtered by a microstripline filter. The filter has a differential output.
The filtered IF signal is fed to the receiver integrated circuit, PMB2403S. The circuit down converts the first IF signal. The 2nd local signal is generated by the VHF synthesizer. The frequency of the second IF is 87 MHz. The 2ndIF signal is filtered by a SAW filter. The filter rejects adjacent channel signal, intermodu­lating signals and the 3rd IF image signal. After filtering the 2nd IF signal is am­plified by a AGC amplifier. The AGC amplifier is a separate IC and the gain control range is 45 dB. The gain is controlled digitally with four control lines.
The 2nd IF signal is fed back to the receiver IC (PMB3403S), which has one 12 dB AGC stage. The amplified IF signal is down converted in the 2nd mixer of the IC. The 3rd local signal is generated from VHF VCO by dividing the original VCO signal by four. The 3rd intermediate frequency is 13 MHz. After the down­conversion the 3rd IF signal is amplified and fed out from the RX IC.
The 3rd IF signal is filtered by a ceramic filter. The filter rejects signals of the adjacent channels. After the filtering the signal is amplified and divided into the I and Q signals by an RC network. The I and Q signal are fed to the RFI inter­face IC.
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Transmitter
The TX intermediate frequency of 400 MHz is modulated by an I/Q modulator (PMB2205S). The TX I and Q signals are generated in the RFI interface circuit and they are fed differentially to the modulator.
The final TX signal ia achieved by mixing the UHF VCO signal and the modu­lated TX intermediate signal. After mixing the TX signal is amplified and filtered by two amplifiers and filters. After these stages the level of the sinal is typically 1 mW (0 dBm).
The power amplifier module amplifies the TX signal to the desired power level. The maximum output level of the module is typically 2.0 W.
The power control loop controls the output level of the power amplifier. The power detector consists of a directional coupler and a diode rectifier. The power control signal (TXC), which has a raised cosine form, comes from the RF inter­face circuit, RFI.
Frequency synthesizers
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The stable frequency source for the synthesizers and base band circuits is the voltage controlled temperature compensated crystal oscillator, VCTCXO. The frequency of the VCTCXO is 26 MHz. The frequency of the oscillator is con­trolled by an AFC voltage, which is generated by the base band circuits.
The operating frequency range of the UHF synthesizer is from 1318 to 1393 MHz in the receiving mode and from 1310 to 1385 MHz in the transmitting mode. The UHF VCO is a module. The dual modulus divider divides the VCO signal by 32/33 for the PLL circuit (PMB2306). The UHF PLL generates the down conversion signal for the receiver and the up conversion signal for the transmitter.
The operating frequency of the VHF synthesizer is 400 MHz. This signal is di­rectly used in the 2nd mixer of the receiver and in the I/Q modulator of the transmitter chain. The VHF signal is divided by four, too. This signal is used in the 3rd mixer of the receiver and in the PLL circuit.
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9712OJ Technical Documentation

Block diagram of baseband

32K x 16 SRAM
ear
PCM CODEC
mic
sio
DAI
A14:0, D15:0
sio
DSP
ext
sio
mem
A5:0, D15:0
RFI
12 bit parallel + 8 x control
ASIC
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RF
UIF–module
LCD
DRIVER
LCD
LCD
PSL+ CHRGR
FLASH LOAD
M2 BUS
Interface
A4:0, A19:16, D7:0
A19:0,D7:0
io ext mem
io
sio
sio
MCU
sio
A12:0,D7:0
E2PROM
8K X 8
A17:0,D7:0
512K x 8 FLASH
A14:0,D7:0
32K x 8 SRAM
487 MHZ
87 MHZ
4
AGC AMPLIFIER
PMB2403S V1.3
13 MHZ
6
AGC CONT.
RXI RXQ

Block diagram of RF

SYSTEM MODULE DS9
9712OJ
Technical Documentation
SWITCH
EXT . ANTENNA
POWER
CONTROL
1310...1393 MHZ
UHF VCO
DIV
32/33
PMB2306
UHF PLL
400 MHZ
VHF VCO
MODULATOR
DIV
4
PMB2205S
I/Q
PMB2306
VHF PLL
PLL
REGUL.
RF
REGUL.
VCTCXO
26 MHZ
3
4
2
2
2
DC CONT.
AFC
SYS.CLOCK
PLL CONT.
TX CONT.
TXI TXQ
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Power distribution diagram

PSL+
VBATT
VCHAR
VL1 VL2
VA1 VA2
VREF
VA2 VL1
RFI
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VBATT VREF
RF
VL2
32Kx16 SRAM
VA1
PCM CODEC
DSP
VL2
VL1
ASIC
VREF VL1
MCU
MCU
VA1
VL1
VL1
E2PROM
8K x 8
UIF–module
UIF–module
LCD Driver
VL1
512K x 8 FLASH
VBATT
LCD
LCD
VL1
32K x 8 SRAM
SYSTEM MODULE DS9
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Connections between system and RF blocks

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Parts list of DS9 v.1.20 code 0200172

ITEM CODE DESCRIPTION VALUE TYPE
R070 1430788 Chip resistor 22 k 5 % 0.063 W 0402 R071 1430794 Chip resistor 39 k 5 % 0.063 W 0402 R072 1430754 Chip resistor 1.0 k 5 % 0.063 W 0402 R073 1430764 Chip resistor 3.3 k 5 % 0.063 W 0402 R074 1430730 Chip resistor 150 5 % 0.063 W 0402 R075 1430804 Chip resistor 100 k 5 % 0.063 W 0402 R076 1430744 Chip resistor 470 5 % 0.063 W 0402 R077 1430796 Chip resistor 47 k 5 % 0.063 W 0402 R078 1430796 Chip resistor 47 k 5 % 0.063 W 0402 R079 1430804 Chip resistor 100 k 5 % 0.063 W 0402 R110 1430842 Chip resistor 680 k 1 % 0.063 W 0402 R111 1430840 Chip resistor 220 k 1 % 0.063 W 0402 R112 1430804 Chip resistor 100 k 5 % 0.063 W 0402 R113 1430804 Chip resistor 100 k 5 % 0.063 W 0402 R114 1430732 Chip resistor 180 5 % 0.063 W 0402 R140 1430792 Chip resistor 33 k 5 % 0.063 W 0402 R141 1430788 Chip resistor 22 k 5 % 0.063 W 0402 R142 1430778 Chip resistor 10 k 5 % 0.063 W 0402 R143 1430764 Chip resistor 3.3 k 5 % 0.063 W 0402 R144 1430764 Chip resistor 3.3 k 5 % 0.063 W 0402 R145 1430732 Chip resistor 180 5 % 0.063 W 0402 R146 1430846 Chip resistor 2.7 k 1 % 0.063 W 0402 R147 1430844 Chip resistor 3.9 k 1 % 0.063 W 0402 R148 1430762 Chip resistor 2.2 k 5 % 0.063 W 0402 R149 1430762 Chip resistor 2.2 k 5 % 0.063 W 0402 R150 1430778 Chip resistor 10 k 5 % 0.063 W 0402 R151 1430804 Chip resistor 100 k 5 % 0.063 W 0402 R152 1430778 Chip resistor 10 k 5 % 0.063 W 0402 R160 1430726 Chip resistor 100 5 % 0.063 W 0402 R161 1430770 Chip resistor 4.7 k 5 % 0.063 W 0402 R162 1430778 Chip resistor 10 k 5 % 0.063 W 0402 R163 1430726 Chip resistor 100 5 % 0.063 W 0402 R164 1430788 Chip resistor 22 k 5 % 0.063 W 0402 R165 1430804 Chip resistor 100 k 5 % 0.063 W 0402 R166 1430804 Chip resistor 100 k 5 % 0.063 W 0402 R169 1430804 Chip resistor 100 k 5 % 0.063 W 0402 R170 1430804 Chip resistor 100 k 5 % 0.063 W 0402 R171 1430788 Chip resistor 22 k 5 % 0.063 W 0402 R172 1430796 Chip resistor 47 k 5 % 0.063 W 0402 R173 1430796 Chip resistor 47 k 5 % 0.063 W 0402 R174 1430754 Chip resistor 1.0 k 5 % 0.063 W 0402 R175 1430700 Chip resistor 10 5 % 0.063 W 0402 R176 1430726 Chip resistor 100 5 % 0.063 W 0402
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R177 1430726 Chip resistor 100 5 % 0.063 W 0402 R178 1430726 Chip resistor 100 5 % 0.063 W 0402 R179 1430726 Chip resistor 100 5 % 0.063 W 0402 R181 1430726 Chip resistor 100 5 % 0.063 W 0402 R182 1430726 Chip resistor 100 5 % 0.063 W 0402 R183 1430734 Chip resistor 220 5 % 0.063 W 0402 R184 1430726 Chip resistor 100 5 % 0.063 W 0402 R185 1430726 Chip resistor 100 5 % 0.063 W 0402 R186 1430726 Chip resistor 100 5 % 0.063 W 0402 R190 1430726 Chip resistor 100 5 % 0.063 W 0402 R191 1430754 Chip resistor 1.0 k 5 % 0.063 W 0402 R192 1430754 Chip resistor 1.0 k 5 % 0.063 W 0402 R193 1430754 Chip resistor 1.0 k 5 % 0.063 W 0402 R194 1430754 Chip resistor 1.0 k 5 % 0.063 W 0402 R195 1430754 Chip resistor 1.0 k 5 % 0.063 W 0402 R196 1430754 Chip resistor 1.0 k 5 % 0.063 W 0402 R197 1430754 Chip resistor 1.0 k 5 % 0.063 W 0402 R198 1430804 Chip resistor 100 k 5 % 0.063 W 0402 R199 1430804 Chip resistor 100 k 5 % 0.063 W 0402 R210 1430754 Chip resistor 1.0 k 5 % 0.063 W 0402 R230 1430804 Chip resistor 100 k 5 % 0.063 W 0402 R231 1430804 Chip resistor 100 k 5 % 0.063 W 0402 R232 1430842 Chip resistor 680 k 1 % 0.063 W 0402 R233 1430796 Chip resistor 47 k 5 % 0.063 W 0402 R234 1430778 Chip resistor 10 k 5 % 0.063 W 0402 R235 1430762 Chip resistor 2.2 k 5 % 0.063 W 0402 R236 1430762 Chip resistor 2.2 k 5 % 0.063 W 0402 R237 1430762 Chip resistor 2.2 k 5 % 0.063 W 0402 R238 1430762 Chip resistor 2.2 k 5 % 0.063 W 0402 R239 1430762 Chip resistor 2.2 k 5 % 0.063 W 0402 R240 1430762 Chip resistor 2.2 k 5 % 0.063 W 0402 R241 1430762 Chip resistor 2.2 k 5 % 0.063 W 0402 R243 1430774 Chip resistor 6.8 k 5 % 0.063 W 0402 R244 1430804 Chip resistor 100 k 5 % 0.063 W 0402 R245 1430804 Chip resistor 100 k 5 % 0.063 W 0402 R246 1430804 Chip resistor 100 k 5 % 0.063 W 0402 R247 1430762 Chip resistor 2.2 k 5 % 0.063 W 0402 R248 1430726 Chip resistor 100 5 % 0.063 W 0402 R249 1430726 Chip resistor 100 5 % 0.063 W 0402 R250 1430804 Chip resistor 100 k 5 % 0.063 W 0402 R251 1430792 Chip resistor 33 k 5 % 0.063 W 0402 R252 1430804 Chip resistor 100 k 5 % 0.063 W 0402 R253 1430770 Chip resistor 4.7 k 5 % 0.063 W 0402 R254 1430760 Chip resistor 1.8 k 5 % 0.063 W 0402 R255 1430726 Chip resistor 100 5 % 0.063 W 0402 R256 1430726 Chip resistor 100 5 % 0.063 W 0402 R257 1430726 Chip resistor 100 5 % 0.063 W 0402 R260 1430726 Chip resistor 100 5 % 0.063 W 0402
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R261 1430784 Chip resistor 15 k 5 % 0.063 W 0402 R262 1430804 Chip resistor 100 k 5 % 0.063 W 0402 R263 1430760 Chip resistor 1.8 k 5 % 0.063 W 0402 R264 1430792 Chip resistor 33 k 5 % 0.063 W 0402 R265 1430792 Chip resistor 33 k 5 % 0.063 W 0402 R267 1430778 Chip resistor 10 k 5 % 0.063 W 0402 R270 1430752 Chip resistor 820 5 % 0.063 W 0402 R502 1430770 Chip resistor 4.7 k 5 % 0.063 W 0402 R503 1430778 Chip resistor 10 k 5 % 0.063 W 0402 R504 1430772 Chip resistor 5.6 k 5 % 0.063 W 0402 R505 1430754 Chip resistor 1.0 k 5 % 0.063 W 0402 R506 1430734 Chip resistor 220 5 % 0.063 W 0402 R507 1430700 Chip resistor 10 5 % 0.063 W 0402 R508 1430700 Chip resistor 10 5 % 0.063 W 0402 R509 1430762 Chip resistor 2.2 k 5 % 0.063 W 0402 R510 1430700 Chip resistor 10 5 % 0.063 W 0402 R511 1430778 Chip resistor 10 k 5 % 0.063 W 0402 R512 1430726 Chip resistor 100 5 % 0.063 W 0402 R513 1430778 Chip resistor 10 k 5 % 0.063 W 0402 R514 1430714 Chip resistor 33 5 % 0.063 W 0402 R516 1430764 Chip resistor 3.3 k 5 % 0.063 W 0402 R517 1430720 Chip resistor 56 5 % 0.063 W 0402 R518 1430740 Chip resistor 330 5 % 0.063 W 0402 R519 1430700 Chip resistor 10 5 % 0.063 W 0402 R520 1430740 Chip resistor 330 5 % 0.063 W 0402 R521 1430764 Chip resistor 3.3 k 5 % 0.063 W 0402 R522 1430200 Chip resistor 120 2 % 0.063 W 0603 R526 1430200 Chip resistor 120 2 % 0.063 W 0603 R527 1430796 Chip resistor 47 k 5 % 0.063 W 0402 R528 1430796 Chip resistor 47 k 5 % 0.063 W 0402 R529 1430796 Chip resistor 47 k 5 % 0.063 W 0402 R530 1430796 Chip resistor 47 k 5 % 0.063 W 0402 R531 1430796 Chip resistor 47 k 5 % 0.063 W 0402 R533 1430734 Chip resistor 220 5 % 0.063 W 0402 R534 1430748 Chip resistor 680 5 % 0.063 W 0402 R535 1430734 Chip resistor 220 5 % 0.063 W 0402 R536 1430748 Chip resistor 680 5 % 0.063 W 0402 R537 1430764 Chip resistor 3.3 k 5 % 0.063 W 0402 R539 1430766 Chip resistor 3.9 k 5 % 0.063 W 0402 R540 1430770 Chip resistor 4.7 k 5 % 0.063 W 0402 R541 1430726 Chip resistor 100 5 % 0.063 W 0402 R542 1430774 Chip resistor 6.8 k 5 % 0.063 W 0402 R543 1430754 Chip resistor 1.0 k 5 % 0.063 W 0402 R544 1430770 Chip resistor 4.7 k 5 % 0.063 W 0402 R545 1430748 Chip resistor 680 5 % 0.063 W 0402 R546 1430748 Chip resistor 680 5 % 0.063 W 0402 R548 1430790 Chip resistor 27 k 5 % 0.063 W 0402 R560 1430732 Chip resistor 180 5 % 0.063 W 0402
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R561 1430764 Chip resistor 3.3 k 5 % 0.063 W 0402 R562 1430764 Chip resistor 3.3 k 5 % 0.063 W 0402 R563 1430764 Chip resistor 3.3 k 5 % 0.063 W 0402 R564 1430744 Chip resistor 470 5 % 0.063 W 0402 R565 1430754 Chip resistor 1.0 k 5 % 0.063 W 0402 R566 1800554 NTC resistor 4.7 k 10 % 0.12 W 0805 R567 1430740 Chip resistor 330 5 % 0.063 W 0402 R568 1430796 Chip resistor 47 k 5 % 0.063 W 0402 R569 1430734 Chip resistor 220 5 % 0.063 W 0402 R600 1430770 Chip resistor 4.7 k 5 % 0.063 W 0402 R601 1430770 Chip resistor 4.7 k 5 % 0.063 W 0402 R602 1430732 Chip resistor 180 5 % 0.063 W 0402 R604 1430770 Chip resistor 4.7 k 5 % 0.063 W 0402 R605 1430770 Chip resistor 4.7 k 5 % 0.063 W 0402 R606 1430710 Chip resistor 22 5 % 0.063 W 0402 R607 1430760 Chip resistor 1.8 k 5 % 0.063 W 0402 R608 1430754 Chip resistor 1.0 k 5 % 0.063 W 0402 R609 1430754 Chip resistor 1.0 k 5 % 0.063 W 0402 R610 1430754 Chip resistor 1.0 k 5 % 0.063 W 0402 R611 1430710 Chip resistor 22 5 % 0.063 W 0402 R612 1430774 Chip resistor 6.8 k 5 % 0.063 W 0402 R613 1430794 Chip resistor 39 k 5 % 0.063 W 0402 R614 1430700 Chip resistor 10 5 % 0.063 W 0402 R615 1430726 Chip resistor 100 5 % 0.063 W 0402 R616 1430720 Chip resistor 56 5 % 0.063 W 0402 R617 1430700 Chip resistor 10 5 % 0.063 W 0402 R618 1430832 Chip resistor 2.7 k 5 % 0.063 W 0402 R619 1430778 Chip resistor 10 k 5 % 0.063 W 0402 R620 1430726 Chip resistor 100 5 % 0.063 W 0402 R621 1430742 Chip resistor 390 5 % 0.063 W 0402 R700 1430700 Chip resistor 10 5 % 0.063 W 0402 R701 1430730 Chip resistor 150 5 % 0.063 W 0402 R702 1412286 Chip jumper 0805 R703 1430740 Chip resistor 330 5 % 0.063 W 0402 R704 1430760 Chip resistor 1.8 k 5 % 0.063 W 0402 R705 1430774 Chip resistor 6.8 k 5 % 0.063 W 0402 R706 1430778 Chip resistor 10 k 5 % 0.063 W 0402 R707 1430784 Chip resistor 15 k 5 % 0.063 W 0402 R709 1430790 Chip resistor 27 k 5 % 0.063 W 0402 R710 1430710 Chip resistor 22 5 % 0.063 W 0402 R711 1430760 Chip resistor 1.8 k 5 % 0.063 W 0402 R712 1430754 Chip resistor 1.0 k 5 % 0.063 W 0402 R713 1430754 Chip resistor 1.0 k 5 % 0.063 W 0402 R714 1430754 Chip resistor 1.0 k 5 % 0.063 W 0402 R715 1430794 Chip resistor 39 k 5 % 0.063 W 0402 R800 1430210 Chip resistor 7.5 k 2 % 0.063 W 0603 R801 1430210 Chip resistor 7.5 k 2 % 0.063 W 0603 R802 1430210 Chip resistor 7.5 k 2 % 0.063 W 0603
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R803 1430210 Chip resistor 7.5 k 2 % 0.063 W 0603 R804 1430700 Chip resistor 10 5 % 0.063 W 0402 R805 1430700 Chip resistor 10 5 % 0.063 W 0402 R806 1430730 Chip resistor 150 5 % 0.063 W 0402 R807 1430774 Chip resistor 6.8 k 5 % 0.063 W 0402 R808 1430764 Chip resistor 3.3 k 5 % 0.063 W 0402 R811 1430754 Chip resistor 1.0 k 5 % 0.063 W 0402 R812 1430754 Chip resistor 1.0 k 5 % 0.063 W 0402 R813 1430788 Chip resistor 22 k 5 % 0.063 W 0402 R814 1430762 Chip resistor 2.2 k 5 % 0.063 W 0402 R815 1430788 Chip resistor 22 k 5 % 0.063 W 0402 R816 1430726 Chip resistor 100 5 % 0.063 W 0402 R817 1430762 Chip resistor 2.2 k 5 % 0.063 W 0402 R818 1430764 Chip resistor 3.3 k 5 % 0.063 W 0402 R819 1430744 Chip resistor 470 5 % 0.063 W 0402 R820 1430786 Chip resistor 18 k 5 % 0.063 W 0402 R821 1430760 Chip resistor 1.8 k 5 % 0.063 W 0402 R823 1430754 Chip resistor 1.0 k 5 % 0.063 W 0402 R824 1430774 Chip resistor 6.8 k 5 % 0.063 W 0402 R825 1430770 Chip resistor 4.7 k 5 % 0.063 W 0402 R826 1430748 Chip resistor 680 5 % 0.063 W 0402 R827 1430804 Chip resistor 100 k 5 % 0.063 W 0402 R828 1430794 Chip resistor 39 k 5 % 0.063 W 0402 R829 1430792 Chip resistor 33 k 5 % 0.063 W 0402 R830 1430726 Chip resistor 100 5 % 0.063 W 0402 R831 1430766 Chip resistor 3.9 k 5 % 0.063 W 0402 R832 1430778 Chip resistor 10 k 5 % 0.063 W 0402 R833 1430762 Chip resistor 2.2 k 5 % 0.063 W 0402 R834 1430778 Chip resistor 10 k 5 % 0.063 W 0402 R836 1430730 Chip resistor 150 5 % 0.063 W 0402 R837 1430744 Chip resistor 470 5 % 0.063 W 0402 R838 1430732 Chip resistor 180 5 % 0.063 W 0402 R839 1430770 Chip resistor 4.7 k 5 % 0.063 W 0402 R840 1430700 Chip resistor 10 5 % 0.063 W 0402 R841 1430774 Chip resistor 6.8 k 5 % 0.063 W 0402 R842 1430778 Chip resistor 10 k 5 % 0.063 W 0402 R843 1430788 Chip resistor 22 k 5 % 0.063 W 0402 R844 1430718 Chip resistor 47 5 % 0.063 W 0402 R845 1430754 Chip resistor 1.0 k 5 % 0.063 W 0402 R846 1430754 Chip resistor 1.0 k 5 % 0.063 W 0402 R847 1430740 Chip resistor 330 5 % 0.063 W 0402 R851 1430778 Chip resistor 10 k 5 % 0.063 W 0402 R852 1430778 Chip resistor 10 k 5 % 0.063 W 0402 R900 1430754 Chip resistor 1.0 k 5 % 0.063 W 0402 R902 1430778 Chip resistor 10 k 5 % 0.063 W 0402 R908 1430778 Chip resistor 10 k 5 % 0.063 W 0402 R909 1430754 Chip resistor 1.0 k 5 % 0.063 W 0402 R914 1430770 Chip resistor 4.7 k 5 % 0.063 W 0402
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9712OJ Technical Documentation
C040 2320544 Ceramic cap. 22 p 5 % 50 V 0402 C041 2320544 Ceramic cap. 22 p 5 % 50 V 0402 C042 2320560 Ceramic cap. 100 p 5 % 50 V 0402 C043 2320598 Ceramic cap. 3.9 n 5 % 50 V 0402 C044 2320560 Ceramic cap. 100 p 5 % 50 V 0402 C045 2320560 Ceramic cap. 100 p 5 % 50 V 0402 C046 2320598 Ceramic cap. 3.9 n 5 % 50 V 0402 C047 2320598 Ceramic cap. 3.9 n 5 % 50 V 0402 C109 2320604 Ceramic cap. 18 p 5 % 50 V 0402 C110 2320107 Ceramic cap. 10 n 5 % 50 V 0603 C111 2604209 Tantalum cap. 1.0 u 20 % 16 V 3.2x1.6x1.6 C112 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C113 2320107 Ceramic cap. 10 n 5 % 50 V 0603 C114 2320107 Ceramic cap. 10 n 5 % 50 V 0603 C115 2604329 Tantalum cap. 4.7 u 20 % 10 V 3.5x2.8x1.9 C116 2604329 Tantalum cap. 4.7 u 20 % 10 V 3.5x2.8x1.9 C117 2604329 Tantalum cap. 4.7 u 20 % 10 V 3.5x2.8x1.9 C118 2320107 Ceramic cap. 10 n 5 % 50 V 0603 C119 2320107 Ceramic cap. 10 n 5 % 50 V 0603 C120 2604329 Tantalum cap. 4.7 u 20 % 10 V 3.5x2.8x1.9 C121 2604329 Tantalum cap. 4.7 u 20 % 10 V 3.5x2.8x1.9 C122 2604209 Tantalum cap. 1.0 u 20 % 16 V 3.2x1.6x1.6 C123 2320560 Ceramic cap. 100 p 5 % 50 V 0402 C124 2320560 Ceramic cap. 100 p 5 % 50 V 0402 C125 2320560 Ceramic cap. 100 p 5 % 50 V 0402 C126 2320560 Ceramic cap. 100 p 5 % 50 V 0402 C140 2320107 Ceramic cap. 10 n 5 % 50 V 0603 C141 2604209 Tantalum cap. 1.0 u 20 % 16 V 3.2x1.6x1.6 C160 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C170 2307816 Ceramic cap. 47 n 20 % 25 V 0805 C171 2307816 Ceramic cap. 47 n 20 % 25 V 0805 C172 2320107 Ceramic cap. 10 n 5 % 50 V 0603 C173 2320544 Ceramic cap. 22 p 5 % 50 V 0402 C175 2307816 Ceramic cap. 47 n 20 % 25 V 0805 C176 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C177 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C178 2320107 Ceramic cap. 10 n 5 % 50 V 0603 C181 2307816 Ceramic cap. 47 n 20 % 25 V 0805 C182 2320107 Ceramic cap. 10 n 5 % 50 V 0603 C183 2307816 Ceramic cap. 47 n 20 % 25 V 0805 C185 2320560 Ceramic cap. 100 p 5 % 50 V 0402 C186 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C187 2320560 Ceramic cap. 100 p 5 % 50 V 0402 C188 2320560 Ceramic cap. 100 p 5 % 50 V 0402 C195 2320544 Ceramic cap. 22 p 5 % 50 V 0402 C196 2320560 Ceramic cap. 100 p 5 % 50 V 0402 C197 2320560 Ceramic cap. 100 p 5 % 50 V 0402 C198 2320560 Ceramic cap. 100 p 5 % 50 V 0402
Copyright Nokia Mobile Phones
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9712OJ Technical Documentation
C200 2307816 Ceramic cap. 47 n 20 % 25 V 0805 C201 2307816 Ceramic cap. 47 n 20 % 25 V 0805 C202 2307816 Ceramic cap. 47 n 20 % 25 V 0805 C203 2307816 Ceramic cap. 47 n 20 % 25 V 0805 C210 2307816 Ceramic cap. 47 n 20 % 25 V 0805 C211 2307816 Ceramic cap. 47 n 20 % 25 V 0805 C230 2307816 Ceramic cap. 47 n 20 % 25 V 0805 C231 2307816 Ceramic cap. 47 n 20 % 25 V 0805 C232 2307816 Ceramic cap. 47 n 20 % 25 V 0805 C233 2307816 Ceramic cap. 47 n 20 % 25 V 0805 C234 2320598 Ceramic cap. 3.9 n 5 % 50 V 0402 C235 2320598 Ceramic cap. 3.9 n 5 % 50 V 0402 C236 2320544 Ceramic cap. 22 p 5 % 50 V 0402 C237 2320544 Ceramic cap. 22 p 5 % 50 V 0402 C238 2320560 Ceramic cap. 100 p 5 % 50 V 0402 C239 2320560 Ceramic cap. 100 p 5 % 50 V 0402 C240 2320560 Ceramic cap. 100 p 5 % 50 V 0402 C241 2320560 Ceramic cap. 100 p 5 % 50 V 0402 C250 2320560 Ceramic cap. 100 p 5 % 50 V 0402 C251 2320560 Ceramic cap. 100 p 5 % 50 V 0402 C252 2320560 Ceramic cap. 100 p 5 % 50 V 0402 C253 2320560 Ceramic cap. 100 p 5 % 50 V 0402 C254 2320560 Ceramic cap. 100 p 5 % 50 V 0402 C255 2320107 Ceramic cap. 10 n 5 % 50 V 0603 C256 2320560 Ceramic cap. 100 p 5 % 50 V 0402 C257 2320560 Ceramic cap. 100 p 5 % 50 V 0402 C258 2320536 Ceramic cap. 10 p 5 % 50 V 0402 C259 2320544 Ceramic cap. 22 p 5 % 50 V 0402 C260 2307816 Ceramic cap. 47 n 20 % 25 V 0805 C261 2320107 Ceramic cap. 10 n 5 % 50 V 0603 C262 2307816 Ceramic cap. 47 n 20 % 25 V 0805 C263 2307816 Ceramic cap. 47 n 20 % 25 V 0805 C264 2307816 Ceramic cap. 47 n 20 % 25 V 0805 C265 2307816 Ceramic cap. 47 n 20 % 25 V 0805 C266 2320598 Ceramic cap. 3.9 n 5 % 50 V 0402 C267 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C268 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C269 2320560 Ceramic cap. 100 p 5 % 50 V 0402 C270 2610100 Tantalum cap. 1 u 20 % 10 V 2.0x1.3x1.2 C271 2307816 Ceramic cap. 47 n 20 % 25 V 0805 C272 2610100 Tantalum cap. 1 u 20 % 10 V 2.0x1.3x1.2 C276 2610100 Tantalum cap. 1 u 20 % 10 V 2.0x1.3x1.2 C277 2307816 Ceramic cap. 47 n 20 % 25 V 0805 C278 2610100 Tantalum cap. 1 u 20 % 10 V 2.0x1.3x1.2 C279 2307816 Ceramic cap. 47 n 20 % 25 V 0805 C282 2610100 Tantalum cap. 1 u 20 % 10 V 2.0x1.3x1.2 C283 2307816 Ceramic cap. 47 n 20 % 25 V 0805 C286 2307816 Ceramic cap. 47 n 20 % 25 V 0805
Copyright Nokia Mobile Phones
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SYSTEM MODULE DS9
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9712OJ Technical Documentation
C287 2610100 Tantalum cap. 1 u 20 % 10 V 2.0x1.3x1.2 C290 2307816 Ceramic cap. 47 n 20 % 25 V 0805 C291 2610100 Tantalum cap. 1 u 20 % 10 V 2.0x1.3x1.2 C292 2320544 Ceramic cap. 22 p 5 % 50 V 0402 C293 2320544 Ceramic cap. 22 p 5 % 50 V 0402 C500 2320536 Ceramic cap. 10 p 5 % 50 V 0402 C501 2320522 Ceramic cap. 2.7 p 0.25 % 50 V 0402 C502 2320560 Ceramic cap. 100 p 5 % 50 V 0402 C504 2320107 Ceramic cap. 10 n 5 % 50 V 0603 C505 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C506 2320560 Ceramic cap. 100 p 5 % 50 V 0402 C507 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C508 2320560 Ceramic cap. 100 p 5 % 50 V 0402 C509 2320518 Ceramic cap. 1.8 p 0.25 % 50 V 0402 C510 2320540 Ceramic cap. 15 p 5 % 50 V 0402 C511 2320520 Ceramic cap. 2.2 p 0.25 % 50 V 0402 C513 2320538 Ceramic cap. 12 p 5 % 50 V 0402 C514 2320530 Ceramic cap. 5.6 p 0.25 % 50 V 0402 C515 2320538 Ceramic cap. 12 p 5 % 50 V 0402 C516 2320536 Ceramic cap. 10 p 5 % 50 V 0402 C517 2320530 Ceramic cap. 5.6 p 0.25 % 50 V 0402 C518 2320107 Ceramic cap. 10 n 5 % 50 V 0603 C519 2320107 Ceramic cap. 10 n 5 % 50 V 0603 C520 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C521 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C524 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C525 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C528 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C529 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C530 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C531 2320598 Ceramic cap. 3.9 n 5 % 50 V 0402 C532 2320107 Ceramic cap. 10 n 5 % 50 V 0603 C533 2307816 Ceramic cap. 47 n 20 % 25 V 0805 C534 2320598 Ceramic cap. 3.9 n 5 % 50 V 0402 C535 2320348 Ceramic cap. 100 p 2 % 50 V 0603 C536 2320348 Ceramic cap. 100 p 2 % 50 V 0603 C537 2320556 Ceramic cap. 68 p 5 % 50 V 0402 C538 2320556 Ceramic cap. 68 p 5 % 50 V 0402 C539 2307816 Ceramic cap. 47 n 20 % 25 V 0805 C540 2320107 Ceramic cap. 10 n 5 % 50 V 0603 C541 2320524 Ceramic cap. 3.3 p 0.25 % 50 V 0402 C560 2320536 Ceramic cap. 10 p 5 % 50 V 0402 C561 2320548 Ceramic cap. 33 p 5 % 50 V 0402 C563 2320560 Ceramic cap. 100 p 5 % 50 V 0402 C564 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C565 2320602 Ceramic cap. 4.7 p 0.25 % 50 V 0402 C580 2320520 Ceramic cap. 2.2 p 0.25 % 50 V 0402 C581 2320516 Ceramic cap. 1.5 p 0.25 % 50 V 0402
Copyright Nokia Mobile Phones
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9712OJ Technical Documentation
C600 2320598 Ceramic cap. 3.9 n 5 % 50 V 0402 C601 2320520 Ceramic cap. 2.2 p 0.25 % 50 V 0402 C602 2604209 Tantalum cap. 1.0 u 20 % 16 V 3.2x1.6x1.6 C603 2320544 Ceramic cap. 22 p 5 % 50 V 0402 C604 2320536 Ceramic cap. 10 p 5 % 50 V 0402 C605 2320536 Ceramic cap. 10 p 5 % 50 V 0402 C606 2320598 Ceramic cap. 3.9 n 5 % 50 V 0402 C607 2320602 Ceramic cap. 4.7 p 0.25 % 50 V 0402 C610 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C612 2320107 Ceramic cap. 10 n 5 % 50 V 0603 C613 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C614 2320602 Ceramic cap. 4.7 p 0.25 % 50 V 0402 C615 2604209 Tantalum cap. 1.0 u 20 % 16 V 3.2x1.6x1.6 C616 2320107 Ceramic cap. 10 n 5 % 50 V 0603 C617 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C619 2604209 Tantalum cap. 1.0 u 20 % 16 V 3.2x1.6x1.6 C621 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C622 2604079 Tantalum cap. 0.22 u 20 % 35 V 3.2x1.6x1.6 C623 2604209 Tantalum cap. 1.0 u 20 % 16 V 3.2x1.6x1.6 C624 2320598 Ceramic cap. 3.9 n 5 % 50 V 0402 C625 2320520 Ceramic cap. 2.2 p 0.25 % 50 V 0402 C626 2320598 Ceramic cap. 3.9 n 5 % 50 V 0402 C627 2320598 Ceramic cap. 3.9 n 5 % 50 V 0402 C628 2320552 Ceramic cap. 47 p 5 % 50 V 0402 C629 2320598 Ceramic cap. 3.9 n 5 % 50 V 0402 C630 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C701 2320604 Ceramic cap. 18 p 5 % 50 V 0402 C702 2320107 Ceramic cap. 10 n 5 % 50 V 0603 C703 2320530 Ceramic cap. 5.6 p 0.25 % 50 V 0402 C704 2320526 Ceramic cap. 3.9 p 0.25 % 50 V 0402 C705 2320520 Ceramic cap. 2.2 p 0.25 % 50 V 0402 C707 2320544 Ceramic cap. 22 p 5 % 50 V 0402 C708 2320524 Ceramic cap. 3.3 p 0.25 % 50 V 0402 C709 2320552 Ceramic cap. 47 p 5 % 50 V 0402 C710 2320552 Ceramic cap. 47 p 5 % 50 V 0402 C712 2310181 Ceramic cap. 1.5 n 5 % 50 V 1206 C714 2320598 Ceramic cap. 3.9 n 5 % 50 V 0402 C715 2604209 Tantalum cap. 1.0 u 20 % 16 V 3.2x1.6x1.6 C716 2320604 Ceramic cap. 18 p 5 % 50 V 0402 C717 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C718 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C719 2320560 Ceramic cap. 100 p 5 % 50 V 0402 C800 2320348 Ceramic cap. 100 p 2 % 50 V 0603 C801 2320348 Ceramic cap. 100 p 2 % 50 V 0603 C804 2320514 Ceramic cap. 1.2 p 0.25 % 50 V 0402 C805 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C806 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C807 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402
Copyright Nokia Mobile Phones
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SYSTEM MODULE DS9
NHK–1
9712OJ Technical Documentation
C808 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C809 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C810 2320524 Ceramic cap. 3.3 p 0.25 % 50 V 0402 C811 2604209 Tantalum cap. 1.0 u 20 % 16 V 3.2x1.6x1.6 C812 2320532 Ceramic cap. 6.8 p 0.25 % 50 V 0402 C813 2320518 Ceramic cap. 1.8 p 0.25 % 50 V 0402 C817 2320536 Ceramic cap. 10 p 5 % 50 V 0402 C818 2500708 Electrol. cap. 3300 u 20 % 16 V C819 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C820 2320536 Ceramic cap. 10 p 5 % 50 V 0402 C821 2320536 Ceramic cap. 10 p 5 % 50 V 0402 C823 2320508 Ceramic cap. 1.0 p 0.25 % 50 V 0402 C825 2320552 Ceramic cap. 47 p 5 % 50 V 0402 C826 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C827 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C828 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C832 2604209 Tantalum cap. 1.0 u 20 % 16 V 3.2x1.6x1.6 C833 2604329 Tantalum cap. 4.7 u 20 % 10 V 3.5x2.8x1.9 C834 2604329 Tantalum cap. 4.7 u 20 % 10 V 3.5x2.8x1.9 C835 2604329 Tantalum cap. 4.7 u 20 % 10 V 3.5x2.8x1.9 C836 2604209 Tantalum cap. 1.0 u 20 % 16 V 3.2x1.6x1.6 C837 2604209 Tantalum cap. 1.0 u 20 % 16 V 3.2x1.6x1.6 C838 2320526 Ceramic cap. 3.9 p 0.25 % 50 V 0402 C839 2320598 Ceramic cap. 3.9 n 5 % 50 V 0402 C840 2320524 Ceramic cap. 3.3 p 0.25 % 50 V 0402 C841 2320576 Ceramic cap. 470 p 5 % 50 V 0402 C847 2320520 Ceramic cap. 2.2 p 0.25 % 50 V 0402 C900 2604329 Tantalum cap. 4.7 u 20 % 10 V 3.5x2.8x1.9 C902 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C903 2320107 Ceramic cap. 10 n 5 % 50 V 0603 C904 2604329 Tantalum cap. 4.7 u 20 % 10 V 3.5x2.8x1.9 C906 2320107 Ceramic cap. 10 n 5 % 50 V 0603 C907 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402 C908 2320546 Ceramic cap. 27 p 5 % 50 V 0402 L004 3641302 Chip coil 470 n 5 % Q=30/25 MHz 1008 L140 3606946 Ferrite bead 0.2r 26r/100mhz 1206 1206 L180 3606946 Ferrite bead 0.2r 26r/100mhz 1206 1206 L270 3641262 Ferrite bead 30r/100mhz 2a 1206 1206 L271 3641262 Ferrite bead 30r/100mhz 2a 1206 1206 L272 3606946 Ferrite bead 0.2r 26r/100mhz 1206 1206 L273 3606946 Ferrite bead 0.2r 26r/100mhz 1206 1206 L501 3641620 Chip coil 180 n 5 % Q=35/100 MHz 0805 L502 3641620 Chip coil 180 n 5 % Q=35/100 MHz 0805 L503 3641622 Chip coil 220 n 5 % Q=30/100 MHz 0805 L504 3641572 Chip coil 22 n 5 % Q=45/250 MHz 0805 L505 3641622 Chip coil 220 n 5 % Q=30/100 MHz 0805 L506 3641572 Chip coil 22 n 5 % Q=45/250 MHz 0805 L600 3641572 Chip coil 22 n 5 % Q=45/250 MHz 0805
Copyright Nokia Mobile Phones
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9712OJ Technical Documentation
L602 3641572 Chip coil 22 n 5 % Q=45/250 MHz 0805 L604 3641560 Chip coil 220 n 10 % Q=30/100 MHz 0805 L606 3641560 Chip coil 220 n 10 % Q=30/100 MHz 0805 L608 3608502 Chip coil 5 % Q=28/35 MHz 1206 L800 3641572 Chip coil 22 n 5 % Q=45/250 MHz 0805 L802 3606946 Ferrite bead 0.2r 26r/100mhz 1206 1206 L803 3641536 Chip coil 33 n 20 % Q=40/250 MHz 0805 L805 3641536 Chip coil 33 n 20 % Q=40/250 MHz 0805 L806 3606946 Ferrite bead 0.2r 26r/100mhz 1206 1206 G600 4510038 SM, VCTCXO 26mhz+–5ppm/–25c/+75c G700 4352806 Vco 1310–1395mhz 4.5/10ma pcn PCN Z500 4512048 Dupl 1710–1785/1805–1880mhz 31x12 31x12 Z503 4550096 Cer.filt 1842.5+–37.5mhz 6.2x5 6.2X5 Z514 4511028 Saw filter 87+–0.12 M Z515 4556998 Cer.filt 13+–0.22mhz 330r 7x3rad 7x3rad Z809 4550092 Cer.filt 1747.5+–37.5mhz 6.2x5.3 6.2x5.3 Z810 4550092 Cer.filt 1747.5+–37.5mhz 6.2x5.3 6.2x5.3 T070 3640402 T ransformer 4:1 balun 800mhz smd SMD T500 3640404 T ransformer 4:1 balun 2.5ghz smd SMD T800 3640402 T ransformer 4:1 balun 800mhz smd SMD T801 3640404 T ransformer 4:1 balun 2.5ghz smd SMD V110 4210020 Transistor BCP69–25 pnp 20 V 1 A SOT223 V111 4200877 Transistor BCX51–16 pnp 45 V 1.5 A SOT89 V141 4113828 Trans. supr . SMBJ28A DO214AA V142 4210020 Transistor BCP69–25 pnp 20 V 1 A SOT223 V143 4200226 Darl. transistor BCV27 npn 30 V 300 mA SOT23 V144 4200226 Darl. transistor BCV27 npn 30 V 300 mA SOT23 V145 4200909 Transistor BC858B/BCW30 pnp 30 V 100 mA SOT23 V147 4110117 Zener diode BZX84 5 % 3.9 V 0.3 W SOT23 V148 4110074 Schottky diode STPS340U 40 V 3 A SOD6 V160 4210100 Transistor BC848W npn 30 V SOT323 V161 4210100 Transistor BC848W npn 30 V SOT323 V210 4110014 Sch. diode x 2 BAS70–07 70 V 15 mA SOT143 V214 4210079 Transistor SOT23 V215 4210079 Transistor SOT23 V216 4210050 Transistor DTA114EE pnp RB V EM3 V219 4210100 Transistor BC848W npn 30 V SOT323 V250 4200917 Transistor BC848B/BCW32 npn 30 V 100 mA SOT23 V251 4211264 MosFet 2SJ16 SOT23 V252 4210102 Transistor BC858W pnp 30 V 100 mA 200MWSOT323 V253 4110014 Sch. diode x 2 BAS70–07 70 V 15 mA SOT143 V270 4117998 Precision voltage reference 4.096 4.096 V500 4210052 Transistor DTC1 14EE npn RB V EM3 V501 4210046 Transistor BFP182 npn 20 V 35 mA SOT143 V502 4210066 Transistor BFR93AW npn 12 V 35 mA SOT323 V503 4210046 Transistor BFP182 npn 20 V 35 mA SOT143 V504 4115802 Sch. diode x 2 4V 30 mA SOT23 V505 4210066 Transistor BFR93AW npn 12 V 35 mA SOT323
Copyright Nokia Mobile Phones
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9712OJ Technical Documentation
V507 4217070 Transistor x 2 IMD V509 4210050 Transistor DTA114EE pnp RB V EM3 V600 4210066 Transistor BFR93AW npn 12 V 35 mA SOT323 V601 4110062 Cap. diode BB535 30 V 2.1/18.7PFSOD323 V602 4210066 Transistor BFR93AW npn 12 V 35 mA SOT323 V603 4210066 Transistor BFR93AW npn 12 V 35 mA SOT323 V800 4115802 Sch. diode x 2 4V 30 mA SOT23 V801 4210046 Transistor BFP182 npn 20 V 35 mA SOT143 V802 4211288 MosFet p–ch 12 V SOT89 V803 4200917 Transistor BC848B/BCW32 npn 30 V 100 mA SOT23 V804 4217070 Transistor x 2 IMD V805 4200917 Transistor BC848B/BCW32 npn 30 V 100 mA SOT23 V806 4110014 Sch. diode x 2 BAS70–07 70 V 15 mA SOT143 V807 4219916 Transistor x 2 FMS1 pnp CE V 0.1 A FMT V808 4200917 Transistor BC848B/BCW32 npn 30 V 100 mA SOT23 V809 4200917 Transistor BC848B/BCW32 npn 30 V 100 mA SOT23 V810 4219920 Transistor x 2 FMW2 npn CB V 0.1 A FMT V811 4211288 MosFet p–ch 12 V SOT89 V812 4200917 Transistor BC848B/BCW32 npn 30 V 100 mA SOT23 V813 4217070 Transistor x 2 IMD V906 4210046 Transistor BFP182 npn 20 V 35 mA SOT143 D181 4346010 IC, SRAM 32kx8 bit 70 ns TSOP28 D184 4342282 M28c6 4C150 EEPROM 8KX8 150NSTSO2150NSTSO28 D185 4340146 IC, flash memory E28F008 TSO40 D191 4340126 IC, 1xnand 2input cmos ss TC7S00F SSO5 D192 4340126 IC, 1xnand 2input cmos ss TC7S00F SSO5 D200 4372212 IC, ROM DSP1616–X11 TQFP100 D210 4346012 IC, SRAM 32kx8 bit 70 ns TSO28 D211 4346010 IC, SRAM 32kx8 bit 70 ns TSOP28 D230 4375070 IC, ESA GSM/PCN ASIC SQFP144 D231 4375144 IC, MCU SQFP80 N260 4343132 IC, PCM coded/filter ST5080 SO28W N270 4370015 IC, ASIC SQFP64 N271 4375588 IC, PSL+ power supply SO24W N501 4349626 IC, v1.3 gsm/pcn rx vso PMB2403S VSO24 N502 4349648 IC, if amp 100mhz sso W1466BBL SSO14 N600 4349660 IC, PLL PMB2306T SO14S N601 4342466 IC, prescaler uPB587G SO8/W4.4MM N701 4349660 IC, PLL PMB2306T SO14S N702 4342472 IC, prescaler MC12034A SO8S N800 4349620 IC, modulator PMB2205S VSO20 N801 4349668 IC, RF amp. G23DB/1GHZ MM6 N802 4359020 IC, pow.amp. 2W6 W PCN N803 4349576 IC, v.conv+1.5–12vto neg so ICL7660 SO8 N900 4340088 IC, regulator TK11547 4.75 V 180 mA SO8S N901 4340088 IC, regulator TK11547 4.75 V 180 mA SO8S X001 4510044 Crystal 60.2 M
Copyright Nokia Mobile Phones
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NHK–1
9712OJ Technical Documentation
X196 5431718 Flexfoil connect 1x30 0.5mm smd X200 5469792 Syst.conn. q 4DC+JACK+16AF+1RF X500 9510143 Antenna clip 4D23053 NHK–1XA W500 9780170 Coax tubes 4D25365 NHE–1 NHK–1 W501 9780170 Coax tubes 4D25365 NHE–1 NHK–1
6502032 Groundingstrip w5.8xl12.6mm becu BECU 9380233 Sticker brady lat–11–747w–5 9480204 Damping pad 4D25528 NHE–4 9853956 PC board DS9 50.0x139.0x1.1 m8 2/pa
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Copyright Nokia Mobile Phones
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