DATA SHEET
MOS FIELD EFFECT TRANSISTOR
N-CHANNEL MOS FET ARRAY
FOR SWITCHING
µ
PA672T
The µPA672T is a super-mini-mold device provided
with two MOS FET elements. It achieves high-density
mounting and saves mounting costs.
FEATURES
• Two MOS FET circuits in package the same size as
SC-70
• Automatic mounting supported
PACKAGE DIMENSIONS (in millimeters)
2.1 ±0.1
1.25 ±0.1
0.2
6
1
0.65
+0.1
–0
5
2
0.65
1.3
2.0 ±0.2
4
3
0.15
0.9 ±0.1
+0.1
–0.05
0.7
0 to 0.1
PIN CONNECTION
654
Source 1
123
1.
Gate 1
2.
Drain 2
3.
Source 2
4.
Gate 2
5.
Drain 1
6.
Marking: MA
(S1)
(G1)
(D2)
(S2)
(G2)
(D1)
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER SYMBOL TEST CONDITIONS RATINGS UNIT
Drain to Source Voltage VDSS 50 V
Gate to Source Voltage VGSS ±7.0 V
Drain Current (DC) ID(DC) 100 mA
Drain Current (pulse) ID(pulse) PW ≤ 10 ms, Duty Cycle ≤ 50 % 200 mA
Total Power Dissipation PT 200 (Total) mW
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C
Document No. G11259EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
©
1996
µ
PA672T
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Drain Cut-off Current IDSS VDS = 50 V, VGS = 0 10
Gate Leakage Current IGSS VGS = ±7.0 V, VDS = 0 ±5.0
Gate Cut-off Voltage VGS(off) VDS = 3.0 V, ID = 1.0 µA 0.7 1.0 1.5 V
Forward Transfer Admittance |yfs|VDS = 3.0 V, ID = 10 mA 20 mS
Drain to Source On-State Resistance
Drain to Source On-State Resistance
RDS(on)1 VGS = 2.5 V, ID = 10 mA 20 40 Ω
RDS(on)2 VGS = 4.0 V, ID = 10 mA 15 20 Ω
Input Capacitance Ciss VDS = 3.0 V, VGS = 0, f = 1.0 MHz 6 pF
Output Capacitance Coss 8pF
Reverse Transfer Capacitance Crss 1.2 pF
Turn-On Delay Time td(on) VDD = 3 V, ID = 20 mA, VGS(on) = 3 V, 9 ns
Rise Time tr
RG = 10 Ω, RL = 120 Ω
50 ns
Turn-Off Delay Time td(off) 20 ns
Fall Time tf 40 ns
µ
A
µ
A
SWITCHING TIME MEASUREMENT CIRCUIT AND CONDITIONS
V
GS
Gate
voltage
waveform
DD
I
D
Drain
current
waveform
PG.
V
GS
0
τ = 1 s
Duty Cycle ≤ 1 %
R
DUT
L
V
G
R
τ
µ
0
0
10 %
t
d(on)
90 %
t
on
V
I
trt
GS(on)
D
d(off)
90 %
t
off
90 %
10 %10 %
t
f
2
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
µ
PA672T
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
300
Free air
250
200
150
100
- Total Power Dissipation - mW
T
50
P
0 50 75 150
25
Per one unit
Total
100 125
TA - Ambient Temperature - ˚C
TRANSFER CHARACTERISTICS
100
VDS = 3 V
10
T
A
1
= 75 ˚C
25 ˚C
–25 ˚C
0.1
- Drain Current - mA
D
I
0.01
0.001
0
123
VGS - Gate to Source Voltage - V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
4.0 V
80
3.5 V
3.0 V
60
40
2.5 V
- Drain Current - mA
D
I
20
0 2345
1
VGS = 2.0 V
VDS - Drain to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
VDS = 3 V
TA = –25 ˚C
50
25 ˚C
125 ˚C
20
| - Forward Transfer Admittance - mS
fs
|y
0
1 100
2 5 10 20 50
ID - Drain Current - mA
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
100
VGS = 2.5 V
50
TA = 75 ˚C
20
25 ˚C
–25 ˚C
10
5
2
- Drain to Source On-State Resistance - Ω
1
DS(on)
R
1 100
2 5 10 20 50
ID - Drain Current - mA
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
100
VGS = 4 V
50
20
10
TA = 75 ˚C
25 ˚C
–25 ˚C
5
2
- Drain to Source On-State Resistance - Ω
1
DS(on)
R
1 100
2 5 10 20 50
ID - Drain Current - mA
3
µ
PA672T
DRAIN TO SOURCE ON-STAGE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
30
20
10
- Drain to Source On-State Resistance - Ω
DS(on)
R
1 23456
VGS - Gate to Source Voltage - V
SWITCHING CHARACTERISTICS
100
50
20
10
- Switching Time - ns
r
, t
5
d(off)
, t
r
, t
2
d(on)
t
1
20
1
ID = 1 mA
10 mA
50 mA
t
r
t
f
t
d(off)
t
d(on)
VDD = 3 V
V
R
50 100 200 500
ID - Drain Current - mA
ID = 10 mA
GS(on)
= 3 V
G
= 10
Ω
7
1000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10
5
2
1
, - Capacitance - pF
rss
0.5
, C
oss
, C
iss
C
0.2
VGS = 0
f = 1 MHz
0.1
2
1 5 10 20 50
VDS - Drain to Source Voltage - V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
10
- Source to Drain Current - mA
SD
I
1
0 0.2 0.4 0.8
VSD - Source to Drain Voltage - V
C
iss
C
oss
C
rss
100
1.00.6
4
µ
PA672T
REFERENCE
Document Name Document No.
NEC semiconductor device reliability/quality control system TEI-1202
Quality grade on NEC semiconductor devices IEI-1209
Semiconductor device mounting technology manual C10535E
Guide to quality assurance for semiconductor devices MEI-1202
Semiconductor selection guide X10679E
5
µ
PA672T
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard:Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special:Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific:Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
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