NEC UPA606T Datasheet

DATA SHEET
0.65
+0.1
–0.15
0.32
+0.1 –0.05
0.16
+0.1 –0.06
2.8 ±0.2
1.5
0.95
1.9
0.8
2.9 ±0.2
1.1 to 1.4
0 to 0.1
0.95
MOS FIELD EFFECT TRANSISTOR
µ
N-CHANNEL MOS FET (6-PIN 2 CIRCUITS)
FOR SWITCHING
PA606T
The µPA606T is a mini-mold device provided with two MOS FET elements. It achieves high-density mounting and saves mounting costs.

FEATURES

• Two MOS FET elements in package the same size as
SC-59
µ
• Complement to
• Automatic mounting supported
PA607T
PACKAGE DIMENSIONS (in millimeters)

PIN CONNECTION

654
1. Source 1
2. Gate 1
3. Drain 2
4. Source 2
5. Gate 2
123
6. Drain 1
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage VDSS 50 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID(DC) 100 mA Drain Current (pulse) ID(pulse)* 200 mA Total Power Dissipation PT 300 (Total) mW Channel Temperature Tch 150 ˚C
Document No. G11253EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan
Storage Temperature Tstg –55 to +150 ˚C
* PW 10 ms, Duty Cycle 50 %
©
1996
µ
PA606T
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Drain Cut-off Current IDSS VDS = 50 V, VGS = 0 1.0 Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 ±1.0 Gate Cut-off Voltage VGS(off) VDS = 5.0 V, ID = 1.0 µA 0.8 1.4 1.8 V Forward Transfer Admittance |yfs|VDS = 5.0 V, ID = 10 mA 20 mS Drain to Source On-State Resistance Drain to Source On-State Resistance
RDS(on)1 VGS = 4.0 V, ID = 10 mA 19 30
RDS(on)2 VGS = 10 V, ID = 10 mA 15 25 Input Capacitance Ciss VDS = 5.0 V, VGS = 0, f = 1.0 MHz 16 pF Output Capacitance Coss –12–pF Reverse Transfer Capacitance Crss –3–pF Turn-On Delay Time td(on) VGS(on) = 5.0 V, RG = 10 Ω, VDD = 5.0 V, 17 ns Rise Time tr
ID = 10 mA, RL = 500
–10–ns Turn-Off Delay Time td(off) –68–ns Fall Time tf –38–ns
µ
A
µ
A

SWITCHING TIME MEASUREMENT CIRCUIT AND CONDITIONS (RESISTANCE LOADED)

V
PG.
V
GS
0
τ = 1 s Duty Cycle 1 %
GS
L
DUT
R
V
R
G
Gate voltage waveform
DD
10 %
0
I
D
90 %
V
I
D
Drain current waveform
t
d(on)
τ
trt
t
on
µ
GS(on)
d(off)
90 %
t
off
90 %
10 %10 %
t
f
2
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
µ
PA606T
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
100
80
60
40
dT - Derating Factor - %
20
40 60 80 100 120 1400 160 30
20
TC - Case Temperature - ˚C
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
120
Pulsed measurement
100
80
4.0 V
3.5 V
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
240
200
160
120
80
- Total Power Dissipation - mW
T
40
P
60 90 120 150 1800
TA - Ambient Temperature - ˚C
TRANSFER CHARACTERISTICS
1 000
100
V
DS
= 5 V Pulsed measurement
60
40
- Drain Current - mA
D
I
20
0723456
1
VGS = 2.5 V
VDS - Drain to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
3
V I
2
1
- Gate Cut-off Voltage - V
GS(off)
V
0
–30 150
0 306090120
Tch - Channel Temperature - ˚C
3.0 V
DS
= 5 V
D
= 1.0 A
10
TA = 75 ˚C
- Drain Current - mA
D
I
1
25 ˚C –25 ˚C
0.1 08
246
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
100
µ
30
TA = 75 ˚C
VDS = 5 V Pulsed measurement
25 ˚C
10
–25 ˚C
3
| - Forward Transfer Admittance - mS
fs
|y
1
1 1 000
10 100
ID - Drain Current - mA
3
µ
PA606T
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
100
30
10
3
1
RDS(on) - Drain to Source On-State Resistance -
1 100
31030
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE
30
VGS = 10 V Pulsed measurement
20
D = 10 mA
I Pulsed measurement
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
1 000
300
100
30
TA = 75 ˚C 25 ˚C
–25 ˚C
10
RDS(on) - Drain to Source On-State Resistance -
10 1 000
30 100 300
ID - Drain Current - mA
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100
10
V
GS = 10 V
Pulsed measurement
C
iss
C
oss
10
0
RDS(on) - Drain to Source On-State Resistance -
–30 1500 60 120
30 90
Tch - Channel Temperature - ˚C
SWITCHING CHARACTERISTICS
100
t
d(off)
50
t
f
t
r
20
t
d(on)
td(on), tr, td(off), tf - Switching Time - ns
10
10 100
20 50 ID - Drain Current - mA
VDD = 5 V V
GS
= 5 V
R
G
= 10
1
Ciss, Coss, Crss - Capacitance - pF
VGS = 0 f = 1 MHz
0.1
0.1 100
110
VDS - Drain to Source Voltage - V
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
VGS = 0 Pulsed measurement
10
1
ISD - Source to Drain Current - mA
0.1
0.4 1.00.5 0.7 0.90.6 0.8 VSD - Source to Drain Voltage - V
C
rss
4
µ
PA606T

REFERENCE

Document Name Document No. NEC semiconductor device reliability/quality control system TEI-1202 Quality grade on NEC semiconductor devices IEI-1209 Semiconductor device mounting technology manual C10535E Guide to quality assurance for semiconductor devices MEI-1202 Semiconductor selection guide X10679E
5
µ
PA606T
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application.
Standard:Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots
Special:Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support)
Specific:Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product.
M4 94.11
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