NEC UPA606T Datasheet

DATA SHEET

0.65

+0.1

–0.15

0.32

+0.1
–0.05

0.16

+0.1
–0.06

2.8 ±0.2

1.5

0.95

1.9

0.8

2.9 ±0.2

1.1 to 1.4

0 to 0.1

0.95

MOS FIELD EFFECT TRANSISTOR

µ

N-CHANNEL MOS FET (6-PIN 2 CIRCUITS)

FOR SWITCHING

PA606T

The µPA606T is a mini-mold device provided with two
MOS FET elements. It achieves high-density mounting
and saves mounting costs.

FEATURES

• Two MOS FET elements in package the same size as

SC-59

µ

• Complement to

• Automatic mounting supported

PA607T

PACKAGE DIMENSIONS (in millimeters)

PIN CONNECTION

654

1. Source 1

2. Gate 1

3. Drain 2

4. Source 2

5. Gate 2

123

6. Drain 1

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

PARAMETER SYMBOL RATINGS UNIT
Drain to Source Voltage VDSS 50 V
Gate to Source Voltage VGSS ±20 V
Drain Current (DC) ID(DC) 100 mA
Drain Current (pulse) ID(pulse)* 200 mA
Total Power Dissipation PT 300 (Total) mW
Channel Temperature Tch 150 ˚C

Document No. G11253EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan

Storage Temperature Tstg –55 to +150 ˚C

* PW ≤ 10 ms, Duty Cycle ≤ 50 %

©

1996

µ

PA606T

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Drain Cut-off Current IDSS VDS = 50 V, VGS = 0 – – 1.0
Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 – – ±1.0
Gate Cut-off Voltage VGS(off) VDS = 5.0 V, ID = 1.0 µA 0.8 1.4 1.8 V
Forward Transfer Admittance |yfs|VDS = 5.0 V, ID = 10 mA 20 – – mS
Drain to Source On-State Resistance
Drain to Source On-State Resistance

RDS(on)1 VGS = 4.0 V, ID = 10 mA – 19 30 Ω

RDS(on)2 VGS = 10 V, ID = 10 mA – 15 25 Ω
Input Capacitance Ciss VDS = 5.0 V, VGS = 0, f = 1.0 MHz – 16 – pF
Output Capacitance Coss –12–pF
Reverse Transfer Capacitance Crss –3–pF
Turn-On Delay Time td(on) VGS(on) = 5.0 V, RG = 10 Ω, VDD = 5.0 V, – 17 – ns
Rise Time tr

ID = 10 mA, RL = 500 Ω

–10–ns
Turn-Off Delay Time td(off) –68–ns
Fall Time tf –38–ns

µ

A

µ

A

SWITCHING TIME MEASUREMENT CIRCUIT AND CONDITIONS (RESISTANCE LOADED)

V

PG.

V

GS

0

τ = 1 s
Duty Cycle ≤ 1 %

GS

L

DUT

R

V

R

G

Gate
voltage
waveform

DD

10 %

0

I

D

90 %

V

I

D

Drain
current
waveform

t

d(on)

τ

trt

t

on

µ

GS(on)

d(off)

90 %

t

off

90 %

10 %10 %

t

f

2

TYPICAL CHARACTERISTICS (TA = 25 ˚C)

µ

PA606T

DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

100

80

60

40

dT - Derating Factor - %

20

40 60 80 100 120 1400 160 30

20

TC - Case Temperature - ˚C

DRAIN CURRENT vs. DRAIN TO
SOURCE VOLTAGE

120

Pulsed
measurement

100

80

4.0 V

3.5 V

TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE

240

200

160

120

80

- Total Power Dissipation - mW

T

40

P

60 90 120 150 1800

TA - Ambient Temperature - ˚C

TRANSFER CHARACTERISTICS

1 000

100

V

DS

= 5 V
Pulsed
measurement

60

40

- Drain Current - mA

D

I

20

0723456

1

VGS = 2.5 V

VDS - Drain to Source Voltage - V

GATE TO SOURCE CUT-OFF VOLTAGE
vs. CHANNEL TEMPERATURE

3

V
I

2

1

- Gate Cut-off Voltage - V

GS(off)

V

0

–30 150

0 306090120

Tch - Channel Temperature - ˚C

3.0 V

DS

= 5 V

D

= 1.0 A

10

TA = 75 ˚C

- Drain Current - mA

D

I

1

25 ˚C
–25 ˚C

0.1
08

246

VGS - Gate to Source Voltage - V

FORWARD TRANSFER ADMITTANCE
vs. DRAIN CURRENT

100

µ

30

TA = 75 ˚C

VDS = 5 V
Pulsed
measurement

25 ˚C

10

–25 ˚C

3

| - Forward Transfer Admittance - mS

fs

|y

1

1 1 000

10 100

ID - Drain Current - mA

3

µ

PA606T

DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE

100

30

10

3

1

RDS(on) - Drain to Source On-State Resistance - Ω

1 100

31030

VGS - Gate to Source Voltage - V

DRAIN TO SOURCE ON-STATE
RESISTANCE vs. CHANNEL TEMPERATURE

30

VGS = 10 V
Pulsed
measurement

20

D = 10 mA

I
Pulsed
measurement

DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT

1 000

300

100

30

TA = 75 ˚C
25 ˚C

–25 ˚C

10

RDS(on) - Drain to Source On-State Resistance - Ω

10 1 000

30 100 300

ID - Drain Current - mA

CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE

100

10

V

GS = 10 V

Pulsed
measurement

C

iss

C

oss

10

0

RDS(on) - Drain to Source On-State Resistance - Ω

–30 1500 60 120

30 90

Tch - Channel Temperature - ˚C

SWITCHING CHARACTERISTICS

100

t

d(off)

50

t

f

t

r

20

t

d(on)

td(on), tr, td(off), tf - Switching Time - ns

10

10 100

20 50
ID - Drain Current - mA

VDD = 5 V
V

GS

= 5 V

R

G

= 10 Ω

1

Ciss, Coss, Crss - Capacitance - pF

VGS = 0
f = 1 MHz

0.1

0.1 100

110

VDS - Drain to Source Voltage - V

SOURCE TO DRAIN DIODE
FORWARD VOLTAGE

100

VGS = 0
Pulsed
measurement

10

1

ISD - Source to Drain Current - mA

0.1

0.4 1.00.5 0.7 0.90.6 0.8
VSD - Source to Drain Voltage - V

C

rss

4

µ

PA606T

REFERENCE

Document Name Document No.
NEC semiconductor device reliability/quality control system TEI-1202
Quality grade on NEC semiconductor devices IEI-1209
Semiconductor device mounting technology manual C10535E
Guide to quality assurance for semiconductor devices MEI-1202
Semiconductor selection guide X10679E

5

µ

PA606T

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consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.

Standard:Computers, office equipment, communications equipment, test and measurement equipment,

audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots

Special:Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster

systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)

Specific:Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.

M4 94.11