The µPA606T is a mini-mold device provided with two
MOS FET elements. It achieves high-density mounting
and saves mounting costs.
FEATURES
• Two MOS FET elements in package the same size as
SC-59
µ
• Complement to
• Automatic mounting supported
PA607T
PACKAGE DIMENSIONS (in millimeters)
PIN CONNECTION
654
1. Source 1
2. Gate 1
3. Drain 2
4. Source 2
5. Gate 2
123
6. Drain 1
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETERSYMBOLRATINGSUNIT
Drain to Source VoltageVDSS50V
Gate to Source VoltageVGSS±20V
Drain Current (DC)ID(DC)100mA
Drain Current (pulse)ID(pulse)*200mA
Total Power DissipationPT300 (Total)mW
Channel TemperatureTch150˚C
Document No. G11253EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
–10–ns
Turn-Off Delay Timetd(off)–68–ns
Fall Timetf–38–ns
µ
A
µ
A
SWITCHING TIME MEASUREMENT CIRCUIT AND CONDITIONS (RESISTANCE LOADED)
V
PG.
V
GS
0
τ = 1 s
Duty Cycle ≤ 1 %
GS
L
DUT
R
V
R
G
Gate
voltage
waveform
DD
10 %
0
I
D
90 %
V
I
D
Drain
current
waveform
t
d(on)
τ
trt
t
on
µ
GS(on)
d(off)
90 %
t
off
90 %
10 %10 %
t
f
2
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
µ
PA606T
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
dT - Derating Factor - %
20
406080100 120 140016030
20
TC - Case Temperature - ˚C
DRAIN CURRENT vs. DRAIN TO
SOURCE VOLTAGE
120
Pulsed
measurement
100
80
4.0 V
3.5 V
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
240
200
160
120
80
- Total Power Dissipation - mW
T
40
P
60901201501800
TA - Ambient Temperature - ˚C
TRANSFER CHARACTERISTICS
1 000
100
V
DS
= 5 V
Pulsed
measurement
60
40
- Drain Current - mA
D
I
20
0723456
1
VGS = 2.5 V
VDS - Drain to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE
vs. CHANNEL TEMPERATURE
3
V
I
2
1
- Gate Cut-off Voltage - V
GS(off)
V
0
–30150
0 306090120
Tch - Channel Temperature - ˚C
3.0 V
DS
= 5 V
D
= 1.0 A
10
TA = 75 ˚C
- Drain Current - mA
D
I
1
25 ˚C
–25 ˚C
0.1
08
246
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE
vs. DRAIN CURRENT
100
µ
30
TA = 75 ˚C
VDS = 5 V
Pulsed
measurement
25 ˚C
10
–25 ˚C
3
| - Forward Transfer Admittance - mS
fs
|y
1
11 000
10100
ID - Drain Current - mA
3
µ
PA606T
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
100
30
10
3
1
RDS(on) - Drain to Source On-State Resistance - Ω
1100
31030
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. CHANNEL TEMPERATURE
30
VGS = 10 V
Pulsed
measurement
20
D = 10 mA
I
Pulsed
measurement
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
1 000
300
100
30
TA = 75 ˚C
25 ˚C
–25 ˚C
10
RDS(on) - Drain to Source On-State Resistance - Ω
101 000
30100300
ID - Drain Current - mA
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
100
10
V
GS = 10 V
Pulsed
measurement
C
iss
C
oss
10
0
RDS(on) - Drain to Source On-State Resistance - Ω
–30150060120
3090
Tch - Channel Temperature - ˚C
SWITCHING CHARACTERISTICS
100
t
d(off)
50
t
f
t
r
20
t
d(on)
td(on), tr, td(off), tf - Switching Time - ns
10
10100
2050
ID - Drain Current - mA
VDD = 5 V
V
GS
= 5 V
R
G
= 10 Ω
1
Ciss, Coss, Crss - Capacitance - pF
VGS = 0
f = 1 MHz
0.1
0.1100
110
VDS - Drain to Source Voltage - V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
VGS = 0
Pulsed
measurement
10
1
ISD - Source to Drain Current - mA
0.1
0.41.00.50.70.90.60.8
VSD - Source to Drain Voltage - V
C
rss
4
µ
PA606T
REFERENCE
Document NameDocument No.
NEC semiconductor device reliability/quality control systemTEI-1202
Quality grade on NEC semiconductor devicesIEI-1209
Semiconductor device mounting technology manualC10535E
Guide to quality assurance for semiconductor devicesMEI-1202
Semiconductor selection guideX10679E
5
µ
PA606T
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard:Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special:Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific:Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
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