NEC Electronics Inc UPA606T Datasheet

Loading...
NEC Electronics Inc UPA606T Datasheet

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

μPA606T

N-CHANNEL MOS FET (6-PIN 2 CIRCUITS)

FOR SWITCHING

The μPA606T is a mini-mold device provided with two MOS FET elements. It achieves high-density mounting and saves mounting costs.

FEATURES

Two MOS FET elements in package the same size as SC-59

Complement to μPA607T

Automatic mounting supported

PACKAGE

DIMENSIONS

(in millimeters)

 

 

–0.15

0.32 –0.05+0.1

0.16

+0.1

 

+0.1

 

 

–0.06

 

 

 

 

 

 

0.65

 

 

 

 

2.8±0.2

1.5

 

 

 

0 to 0.1

 

 

 

 

 

 

 

 

 

0.95

0.95

 

0.8

 

 

 

 

 

 

 

 

 

1.9

1.1 to 1.4

 

 

 

 

 

 

 

 

 

2.9 ±0.2

 

 

PIN CONNECTION

6 5 4

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

PARAMETER

SYMBOL

RATINGS

UNIT

 

 

 

 

Drain to Source Voltage

VDSS

50

V

 

 

 

 

Gate to Source Voltage

VGSS

±20

V

 

 

 

 

Drain Current (DC)

ID(DC)

100

mA

 

 

 

 

Drain Current (pulse)

ID(pulse)*

200

mA

 

 

 

 

Total Power Dissipation

PT

300 (Total)

mW

 

 

 

 

Channel Temperature

Tch

150

˚C

 

 

 

 

Storage Temperature

Tstg

–55 to +150

˚C

 

 

 

 

* PW 10 ms, Duty Cycle 50 %

1

2

3

1.Source 1

2.Gate 1

3.Drain 2

4.Source 2

5.Gate 2

6.Drain 1

Document No. G11253EJ1V0DS00 (1st edition)

 

 

Date Published June 1996 P

 

 

Printed in Japan

©

1996

 

 

 

 

 

 

 

 

μPA606T

 

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

 

 

 

 

 

 

 

 

 

 

 

Drain Cut-off Current

IDSS

VDS = 50 V, VGS = 0

1.0

μA

 

 

 

 

 

 

 

 

 

 

 

Gate Leakage Current

IGSS

VGS = ±20 V, VDS = 0

±1.0

μA

 

 

 

 

 

 

 

 

 

 

 

Gate Cut-off Voltage

VGS(off)

VDS = 5.0 V, ID = 1.0 μA

0.8

1.4

1.8

V

 

 

 

 

 

 

 

 

 

 

 

Forward Transfer Admittance

|yfs|

VDS = 5.0 V, ID = 10 mA

20

mS

 

 

 

 

 

 

 

 

 

 

 

Drain to Source On-State Resistance

RDS(on)1

VGS = 4.0 V, ID = 10 mA

19

30

Ω

 

 

 

 

 

 

 

 

 

 

 

Drain to Source On-State Resistance

RDS(on)2

VGS = 10 V, ID = 10 mA

15

25

Ω

 

 

 

 

 

 

 

 

 

 

 

Input Capacitance

Ciss

VDS = 5.0 V, VGS = 0, f = 1.0 MHz

16

pF

 

 

 

 

 

 

 

 

 

 

 

Output Capacitance

Coss

 

12

pF

 

 

 

 

 

 

 

 

 

 

 

Reverse Transfer Capacitance

Crss

 

3

pF

 

 

 

 

 

 

 

 

 

 

 

Turn-On Delay Time

td(on)

VGS(on) = 5.0 V, RG = 10 Ω, VDD = 5.0 V,

17

ns

 

 

 

 

ID = 10 mA, RL = 500 Ω

 

 

 

 

 

 

Rise Time

tr

10

ns

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Turn-Off Delay Time

td(off)

 

68

ns

 

 

 

 

 

 

 

 

 

 

 

Fall Time

tf

 

38

ns

 

 

 

 

 

 

 

 

 

 

SWITCHING TIME MEASUREMENT CIRCUIT AND CONDITIONS (RESISTANCE LOADED)

 

 

VGS

 

 

 

90 %

RL

Gate

 

 

 

 

 

 

 

VGS(on)

 

DUT

voltage

0

10 %

 

 

 

 

waveform

 

 

 

 

 

VDD

 

 

 

90 %

 

 

RG

 

ID

 

 

90 %

 

 

 

 

 

 

 

 

 

PG.

 

 

 

 

ID

 

 

Drain

 

10 %

 

 

10 %

 

current

 

 

 

 

 

 

waveform

 

 

 

 

 

VGS

 

 

td(on)

tr

td(off)

tf

0

 

 

 

 

 

 

τ

 

 

 

ton

 

toff

 

 

 

 

 

 

τ = 1 μs

 

 

 

 

 

 

Duty Cycle 1 %

 

 

 

 

 

 

2

+ 4 hidden pages