NEC UPA831TC DATA SHEET

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NEC UPA831TC DATA SHEET

UPA831TC

PRELIMINARY DATA SHEET

 

 

 

NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA831TC

FEATURES

 

OUTLINE DIMENSIONS (Units in mm)

• SMALL PACKAGE OUTLINE:

Package Outline TC

1.5 mm x 1.1 mm, 33% smaller than conventional

(TOP VIEW)

SOT-363 package

 

LOW HEIGHT PROFILE:

 

 

1.50± 0.1

 

 

 

 

1.10± 0.1

 

 

 

Just 0.55 mm high

 

 

0.20

+0.1

FLAT LEAD STYLE:

 

 

 

 

-0.05

 

 

 

 

 

 

Reduced lead inductance improves electrical

 

1

 

6

 

 

performance

 

0.48

 

 

 

 

1.50± 0.1

 

 

 

 

• TWO DIFFERENT DIE TYPES:

0.96

2

 

5

 

 

Q1 - Ideal oscillator transistor

 

 

 

 

 

 

 

 

 

0.48

 

 

 

 

Q2 - Ideal buffer amplifier transistor

 

 

 

 

 

 

 

 

 

 

 

 

 

3

 

4

 

PIN OUT

1.Collector (Q1)

2.Emitter (Q1)

3.Collector (Q2)

4.Base (Q2)

5.Emitter (Q2)

6.Base (Q1)

DESCRIPTION

The UPA831TC contains one NE856 and one NE681 NPN high frequency silicon bipolar chip. NEC's new ultra small TC package is ideal for all portable wireless applications where reducing board space is a prime consideration. Each transistor chip is independently mounted and easily configured for oscillator/buffer amplifier and other applications.

0.55± 0.05

Note: Pin 1 is the lower left most pin as the package lettering is oriented and read left to right.

0.11+0.1 -0.05

ELECTRICAL CHARACTERISTICS (TA = 25° C)

 

 

 

PART NUMBER

 

 

UPA831TC

 

 

 

 

PACKAGE OUTLINE

 

 

TC

 

 

 

 

 

 

 

 

 

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

 

 

 

 

 

 

 

 

 

 

ICBO

Collector Cutoff Current at VCB = 10 V, IE = 0

A

 

 

1

 

 

IEBO

Emitter Cutoff Current at VEB = 1 V, IC = 0

A

 

 

1

 

 

hFE

DC Current Gain1 at VCE = 3 V, IC = 7 mA

 

70

 

140

Q1

 

 

 

 

 

 

 

 

fT

Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz

GHz

3.0

4.5

 

 

 

Cre

Feedback Capacitance2 at VCB = 3 V, lE = 0, f = 1 MHz

pF

 

0.7

1.5

 

 

|S21E|2

Insertion Power Gain at VCE = 3 V, IC =7 mA, f = 1 GHz

dB

7

9

 

 

 

NF

Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz

dB

 

1.2

2.5

 

 

 

 

 

 

 

 

 

 

ICBO

Collector Cutoff Current at VCB = 10 V, IE = 0

A

 

 

0.8

 

 

IEBO

Emitter Cutoff Current at VEB = 1 V, IC = 0

A

 

 

0.8

Q2

 

hFE

DC Current Gain1 at VCE = 3 V, IC = 7 mA

 

70

 

150

 

fT

Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz

GHz

4.5

7.0

 

 

 

 

 

 

 

 

 

 

 

Cre

Feedback Capacitance2 at VCB = 3 V, IE = 0, f = 1 MHz

pF

 

 

0.9

 

 

|S21E|2

Insertion Power Gain at VCE = 3 V, IC =7 mA, f = 1 GHz

dB

10

12

 

 

 

NF

Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz

dB

 

1.4

2.7

 

 

 

 

 

 

 

 

Notes:

1. Pulsed measurement, pulse width 350 s, duty cycle 2 %.

 

 

 

 

2.Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to guard pin of capacitances meter.

California Eastern Laboratories

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