NEC UPA800TF, UPA800T-T1B, UPA800T Datasheet

PACKAGE DRAWINGS

(Unit: mm)

SILICON TRANSISTOR

The µPA800T has built-in 2 low-voltage transistors which are designed

to amplify low noise in the VHF band to the UHF band.

FEATURES

• Low Noise
NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA

• High Gain
|S

21e|

2

= 6.5 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA

• A Mini Mold Package Adopted

• Built-in 2 Transistors (2 × 2SC4228)

ORDERING INFORMATION

PART NUMBER

QUANTITY PACKING STYLE

µ

PA800T Loose products Embossed tape 8 mm wide. Pin 6 (Q1

(50 PCS) Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter)

face to perforation side of the tape.

µ

PA800T-T1 Taping products

(3 KPCS/Reel)

Remark If you require an evaluation sample, please contact an NEC

Sales Representative. (Unit sample quantity is 50 pcs.)

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

PARAMETER SYMBOL RATING UNIT
Collector to Base Voltage VCBO 20 V
Collector to Emitter Voltage VCEO 10 V
Emitter to Base Voltage VEBO 1.5 V
Collector Current IC 35 mA
Total Power Dissipation PT 150 in 1 element mW

200 in 2 elements

Note

Junction Temperature Tj 150 ˚C
Storage Temperature Tstg –65 to +150 ˚C

Note 110 mW must not be exceeded in 1 element.

µ

PA800T

HIGH-FREQUENCY LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

(WITH BUILT-IN 2 ELEMENTS) MINI MOLD

PIN CONFIGURATION (Top View)

©

1995

PRELIMINARY DATA SHEET

Printed in Japan

Document No. ID-3634

(O.D. No. ID-9141)

Date Published April 1995 P

The information in this document is subject to change without notice.

2.1±0.1

1.25±0.1

123

654

0.2

–0

+0.1

0.650.65

1.3

2.0±0.2

0.9±0.1

0.7

0~0.1

0.15

–0

+0.1

654
Q

1

Q

2

123

PIN CONNECTIONS

1. Collector (Q1)

2. Emitter (Q1)

3. Collector (Q2)



4. Emitter (Q2)

5. Base (Q2)

6. Base (Q1)

XY

µ

PA800T

2

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

PARAMETER SYMBOL CONDITION MIN. TYP. MAX. UNIT

Collector Cutoff Current ICBO VCB = 10 V, IE = 0 1.0

µ

A

Emitter Cutoff Current IEBO VEB = 1 V, IC = 0 1.0

µ

A

DC Current Gain hFE VCE = 3 V, IC = 5 mA

Note 1

80 200
Gain Bandwidth Product fT VCE = 3 V, IC = 5 mA 5.5 80 GHz
Feed-back Capacitance Cre VCB = 3 V, IE = 0, f = 1 MHz

Note 2

0.7 pF
Insertion Power Gain (1) |S21e|2VCE = 1 V, IC = 3 mA, f = 2 GHz 4.5 6.5 dB
Insertion Power Gain (2) |S21e|2VCE = 3 V, IC = 5 mA, f = 2 GHz 5.5 7.5 dB
Noise Figure (1) NF VCE = 1 V, IC = 3 mA, f = 2 GHz 1.9 3.2 dB
Noise Figure (2) NF VCE = 3 V, IC = 5 mA, f = 2 GHz 1.9 3.2 dB

Notes 1. Pulse Measurement: Pw ≤ 350 µs, Duty cycle ≤ 2 %

2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.

hFE CLASSIFICATION

Rank KB

Marking RL

hFE Value 80 to 200

TYPICAL CHARACTERISTICS (TA = 25 °C)

100

0

5

0

10

0.5

50 100 150

200

5 1.0

10

15

20

0 0.5 1.0

10

20

1 5 10 50

20

50

100

200

V

CE = 3 V

VCE = 3 V

120 A

100 A

80 A

IB = 20 A

Total Power Dissipation PT (mW)

Ambient Temperature TA (°C) Collector to Emitter Voltage VCE (V)

Collector Current IC (mA)

Collector Current I

C (mA)

Base to Emitter Voltage VBE (V)

Collector Current I

C (mA)

DC Current Gain hFE

60 A

40 A

25

Free Air

IC - VBE Characteristics hFE - IC Characteristics

PT - TA Characteristics

I

C - VCE Characteristics

2 Elements in Total

Per Element

160 A

µ

140 A

µ

µ

µ

µ

µ

µ

µ