NEC UPA607T Datasheet
DATA SHEET
0.65
+0.1
–0.15
0.32
+0.1
–0.05
0.16
+0.1
–0.06
2.8 ±0.2
1.5
0.95
1.9
0.8
2.9 ±0.2
1.1 to 1.4
0 to 0.1
0.95
MOS FIELD EFFECT TRANSISTOR
µ
P-CHANNEL MOS FET (6-PIN 2 CIRCUITS)
FOR SWITCHING
PA607T
The µPA607T is a mini-mold device provided with two
MOS FET elements. It achieves high-density mounting
and saves mounting costs.
FEATURES
• Two MOS FET elements in package the same size as
SC-59
µ
• Complement to
• Automatic mounting supported
PA606T
PACKAGE DIMENSIONS (in millimeters)
PIN CONNECTION
654
1. Source 1
2. Gate 1
3. Drain 2
4. Source 2
5. Gate 2
123
6. Drain 1
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER SYMBOL RATINGS UNIT
Drain to Source Voltage VDSS –50 V
Gate to Source Voltage VGSS +16 V
Drain Current (DC) ID(DC) –100 mA
Drain Current (pulse) ID(pulse)* –200 mA
Total Power Dissipation PT 300 (Total) mW
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C
* PW ≤ 10 ms, Duty Cycle ≤ 50 %
Document No. G11254EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
©
1996
µ
PA607T
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Drain Cut-off Current IDSS VDS = –50 V, VGS = 0 – – –1.0
Gate Leakage Current IGSS VGS = +16 V, VDS = 0 – – +1.0
Gate Cut-off Voltage VGS(off) VDS = –5.0 V, ID = –1.0 µA –1.5 –1.9 –2.5 V
Forward Transfer Admittance |yfs|VDS = –5.0 V, ID = –10 mA 15 – – mS
Drain to Source On-State Resistance
Drain to Source On-State Resistance
RDS(on)1 VGS = –4.0 V, ID = –10 mA – 60 100 Ω
RDS(on)2 VGS = –10 V, ID = –10 mA – 40 60 Ω
Input Capacitance Ciss VDS = –5.0 V, VGS = 0, f = 1.0 MHz – 15 – pF
Output Capacitance Coss –10–pF
Reverse Transfer Capacitance Crss –1–pF
Turn-On Delay Time td(on) VGS(on) = –5.0 V, RG = 10 Ω,–45–ns
Rise Time tr
VDD = –5.0 V, ID = –10 mA, RL = 500 Ω
–75–ns
Turn-Off Delay Time td(off) –25–ns
Fall Time tf –80–ns
µ
A
µ
A
SWITCHING TIME MEASUREMENT CIRCUIT AND CONDITIONS
V
GS
Gate
voltage
waveform
DD
I
D
Drain
current
0
waveform
PG.
0
V
GS
τ = 1 s
Duty Cycle ≤ 1 %
R
DUT
L
V
G
R
τ
µ
10 %
t
d(on)
10 %
90 %
V
trt
I
GS(ON)
d(off)
D
90 %
t
10 %
90 %
f
2
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