NEC UPA607T Datasheet

DATA SHEET

0.65

+0.1

–0.15

0.32

+0.1
–0.05

0.16

+0.1
–0.06

2.8 ±0.2

1.5

0.95

1.9

0.8

2.9 ±0.2

1.1 to 1.4

0 to 0.1

0.95

MOS FIELD EFFECT TRANSISTOR

µ

P-CHANNEL MOS FET (6-PIN 2 CIRCUITS)

FOR SWITCHING

PA607T

The µPA607T is a mini-mold device provided with two
MOS FET elements. It achieves high-density mounting
and saves mounting costs.

FEATURES

• Two MOS FET elements in package the same size as

SC-59

µ

• Complement to

• Automatic mounting supported

PA606T

PACKAGE DIMENSIONS (in millimeters)

PIN CONNECTION

654

1. Source 1

2. Gate 1

3. Drain 2

4. Source 2

5. Gate 2

123

6. Drain 1

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

PARAMETER SYMBOL RATINGS UNIT
Drain to Source Voltage VDSS –50 V
Gate to Source Voltage VGSS +16 V
Drain Current (DC) ID(DC) –100 mA
Drain Current (pulse) ID(pulse)* –200 mA
Total Power Dissipation PT 300 (Total) mW
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C

* PW ≤ 10 ms, Duty Cycle ≤ 50 %

Document No. G11254EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan

©

1996

µ

PA607T

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Drain Cut-off Current IDSS VDS = –50 V, VGS = 0 – – –1.0
Gate Leakage Current IGSS VGS = +16 V, VDS = 0 – – +1.0
Gate Cut-off Voltage VGS(off) VDS = –5.0 V, ID = –1.0 µA –1.5 –1.9 –2.5 V
Forward Transfer Admittance |yfs|VDS = –5.0 V, ID = –10 mA 15 – – mS
Drain to Source On-State Resistance
Drain to Source On-State Resistance

RDS(on)1 VGS = –4.0 V, ID = –10 mA – 60 100 Ω

RDS(on)2 VGS = –10 V, ID = –10 mA – 40 60 Ω
Input Capacitance Ciss VDS = –5.0 V, VGS = 0, f = 1.0 MHz – 15 – pF
Output Capacitance Coss –10–pF
Reverse Transfer Capacitance Crss –1–pF
Turn-On Delay Time td(on) VGS(on) = –5.0 V, RG = 10 Ω,–45–ns
Rise Time tr

VDD = –5.0 V, ID = –10 mA, RL = 500 Ω

–75–ns
Turn-Off Delay Time td(off) –25–ns
Fall Time tf –80–ns

µ

A

µ

A

SWITCHING TIME MEASUREMENT CIRCUIT AND CONDITIONS

V

GS

Gate
voltage
waveform

DD

I

D

Drain
current

0

waveform

PG.

0

V

GS

τ = 1 s
Duty Cycle ≤ 1 %

R

DUT

L

V

G

R

τ

µ

10 %

t

d(on)

10 %

90 %

V

trt

I

GS(ON)

d(off)

D

90 %

t

10 %

90 %

f

2

TYPICAL CHARACTERISTICS (TA = 25 ˚C)

µ

PA607T

DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

100

80

60

40

dT - Derating Factor - %

20

20

40 60 80 100 120 1400 160 30

TC - Case Temperature - ˚C

DRAIN CURRENT vs. DRAIN TO
SOURCE VOLTAGE

–120

Pulsed
measurement

–100

–10 V

–8 V

–6 V

TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE

240

200

160

120

80

- Total Power Dissipation - mW

T

40

P

60 90 120 150 180 2100

TA - Ambient Temperature - ˚C

TRANSFER CHARACTERISTICS

–100

–10

–80

–60

–40

- Drain Current - mA

D

I

–20

–2

0 –14–4 –6 –8 –10 –12

VDS - Drain to Source Voltage - V

GATE TO SOURCE CUT-OFF VOLTAGE
vs. CHANNEL TEMPERATURE

–2.4

–2.2

–2.0

–1.8

–1.6

- Gate Cut-off Voltage - V

GS(off)

–1.4

V

–1.2

–30 1500 306090120

Tch - Channel Temperature - ˚C

VGS = –4 V

V

DS

= –5.0 V

I

D

= –1 A

–1

TA = 150 ˚C

–0.1

- Drain Current - mA

D

I

–0.01

–0.001

75 ˚C
25 ˚C

–25 ˚C

V

DS

= –5.0 V
Pulsed
measurement

0 –15–5 –10

VGS - Gate to Source Voltage - V

FORWARD TRANSFER ADMITTANCE
vs. DRAIN CURRENT

100

V

DS

= –5.0 V

µ

Pulsed
measurement

50

20

10

5

T

A

= –25 ˚C
25 ˚C
75 ˚C

2

| - Forward Transfer Admittance - mS

fs

|y

150 ˚C

1

–1 –100–2 –5 –10 –20 –50

ID - Drain Current - mA

3

µ

PA607T

DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE

100

80

60

40

20

RDS(on) - Drain to Source On-State Resistance - Ω

0

140

120

100

80

ID = –1 mA

–10 mA

VGS - Gate to Source Voltage - V

DRAIN TO SOURCE ON-STATE RESISTANCE
vs. CHANNEL TEMPERATURE

VGS = –4 V

D = –10 mA

I

Pulsed
measurement

–20–4 –8 –12 –16

RDS(on) - Drain to Source On-State Resistance - Ω

DRAIN TO SOURCE ON-STATE RESISTANCE
vs.DRAIN CURRENT

150

100

50

0

–1 –100–2 –5 –10 –20 –50

100

30

10

3

TA = 150 ˚C

75 ˚C
25 ˚C

–25 ˚C

ID - Drain Current - mA

CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE

VGS = –4 V
Pulsed
measurement

VGS = 0
f = 1 MHz

Ciss

Coss

60

40

20

RDS(on) - Drain to Source On-State Resistance - Ω

500

200

100

50

20

10

td(on), tr, td(off), tf - Switching Time - ns

5

0–30 –100–1 –10 –50

Tch - Channel Temperature - ˚C

SWITCHING CHARACTERISTICS

–10–5

tr

td(on)
tf

td(off)

ID - Drain Current - mA

VDD = –5.0 V
V

GS = –4 V
G = 10 Ω

R

1

Crss

Ciss, Coss, Crss - Capacitance - pF

0.3

15030 60 90 120

–500–20 –50 –100 –200

0.1

0.5

–100

VGS = 0
Pulsed
measurement

–10

–1

ISD - Source to Drain Current - mA

–0.1

–2 –5 –20

VDS - Drain to Source Voltage - V

SOURCE TO DRAIN DIODE
FORWARD VOLTAGE

–0.6–0.5
VSD - Source to Drain Voltage - V

–1.0–0.7 –0.8 –0.9

4

µ

PA607T

REFERENCE

Document Name Document No.
NEC semiconductor device reliability/quality control system TEI-1202
Quality grade on NEC semiconductor devices IEI-1209
Semiconductor device mounting technology manual C10535E
Guide to quality assurance for semiconductor devices MEI-1202
Semiconductor selection guide X10679E

5

µ

PA607T

No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.

Standard:Computers, office equipment, communications equipment, test and measurement equipment,

audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots

Special:Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster

systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)

Specific:Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.

M4 94.11