NEC UPA1458H Datasheet
DATA SHEET
SILICON TRANSISTOR ARRAY
µ
PA1458
NPN SILICON POWER TRANSISTOR ARRAY
LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR)
INDUSTRIAL USE
DESCRIPTION
The µPA1458 is NPN silicon epitaxial Darlington
Power Transistor Array that built in Surge Absorber and
4 circuits designed for driving solenoid, relay, lamp and
so on.
FEATURES
• Surge Absorber (C - B) built in.
• Easy mount by 0.1 inch of terminal interval.
• High hFE for Darlington Transistor.
ORDERING INFORMATION
Part Number Package Quality Grade
µ
PA1458H 10 Pin SIP Standard
Please refer to "Quality grade on NEC Semiconductor Devices"
(Document number IEI-1209) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C)
Collector to Base Voltage VCBO 60 ±10 V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Surge Sustaining Energy E
Collector Current (DC) I
Collector Current (pulse) I
Collector Current I
Base Current (DC) I
Total Power Dissipation P
Total Power Dissipation P
Junction Temperature T
Storage Temperature T
CEO 60 ±10 V
EBO 7V
CEO(sus) 25 mJ/unit
C(DC) ±5 A/unit
C(pulse)* ±10 A/unit
CBS(DC) 5 mA/unit
B(DC) 0.5 A/unit
T1** 3.5 W
T2*** 28 W
j 150 ˚C
stg –55 to +150 ˚C
26.8 MAX.
10
2.5
1.4 0.6 ±0.1
1 2 3 4 5 6 7 8 9 10
3
2
1
(B)
R
1 R2
PACKAGE DIMENSION
(in millimeters)
4.0
2.54
CONNECTION DIAGRAM
579
468
(C)
PIN No.
2, 4, 6, 8
3, 5, 7, 9
1, 10
R
R
(E)
: Base (B)
: Collector (C)
: Emitter (E)
.
1 = 3.0 kΩ
.
.
2 = 300 Ω
.
10 MIN.
1.4
0.5 ±0.1
10
* PW ≤ 300
** 4 Circuits, T
*** 4 Circuits, T
Document No. IC-3523
(O. D. No. IC-6342)
Date Published September 1994 P
Printed in Japan
µ
s, Duty Cycle ≤ 10 %
a = 25 ˚C
c = 25 ˚C
The information in this document is subject to change without notice.
©
1994
ELECTRICAL CHARACTERISTICS (Ta = 25 ˚C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Collector Leakage Current ICES 10
Emitter Leakage Current IEBO 10 mA V EB = 5 V, IC = 0
Collector to Emitter VCEO(sus) 50 60 70 V IC = 3 A, L = 1 mH
Sustaining Voltage
DC Current Gain hFE1
DC Current Gain hFE2
Collector Saturation Voltage VCE(sat)
Base Saturation Voltage VBE(sat)
Turn On Time ton 1
Storage Time tstg 7
Fall Time tf 2
*
2000 7000 20000 — VCE = 2 V, IC = 2 A
*
500 3000 — VCE = 2 V, IC = 4 A
*
*
0.9 1.5 V IC = 2 A, IB = 2 mA
1.6 2 V IC = 2 A, IB = 2 mA
µ
A VCE = 40 V
µ
s
C = 2 A
I
µ
µ
IB1 = –IB2 = 2 mA
s
s
.
VCC = 40 V, RL = 20 Ω
.
See test circuit
* PW ≤ 350 µs, Duty Cycle ≤ 2 % / pulsed
SWITCHING TIME TEST CIRCUIT
µ
PA1458
.
.
VIN
PW
.
PW = 50 s
Duty Cycle ≤ 2 %
µ
.
B1
I
IB2
.
VBB = –5 V
.
.
RL = 20 Ω
.
IC
T.U.T.
.
VCC = 40 V
.
Base Current
Wave Form
Collector
Current
Wave Form
90 %
10 %
ton tstg tf
I
IB2
B1
IC
2
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