NEC UPA1454H Datasheet
DATA SHEET
SILICON TRANSISTOR ARRAY
µ
NPN SILICON POWER TRANSISTOR ARRAY
LOW SPEED SWITCHING USE
INDUSTRIAL USE
PA1454
DESCRIPTION
The µPA1454 is NPN silicon epitaxial Power Transistor
Array that built in 4 circuits designed for driving solenoid,
relay, lamp and so on.
FEATURES
• Easy mount by 0.1 inch of terminal interval.
• High hFE. Low VCE(sat).
FE = 800 to 3200 (at IC = 1 A)
h
CE(sat) = 1.0 V MAX. (at IC = 3 A)
V
ORDERING INFORMATION
Part Number Package Quality Grade
µ
PA1454H 10 Pin SIP Standard
Please refer to "Quality grade on NEC Semiconductor Devices"
(Document number IEI-1209) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C)
Collector to Base Voltage VCBO 100 V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current (DC) I
Collector Current (pulse) I
Base Current (DC) I
Total Power Dissipation P
Total Power Dissipation P
Junction Temperature T
Storage Temperature T
CEO 100 V
EBO 7V
C(DC) 5 A/unit
C(pulse)* 10 A/unit
B(DC) 1.0 A/unit
T1** 3.5 W
T2*** 28 W
j 150 ˚C
stg –55 to +150 ˚C
PACKAGE DIMENSION
(in millimeters)
26.8 MAX.
10
2.5
1.4 0.6 ±0.1
1 2 3 4 5 6 7 8 9 10
CONNECTION DIAGRAM
3
2
110
4
2, 4, 6, 8
3, 5, 7, 9
1, 10
2.54
5
6
PIN No.
: Base (B)
: Collector (C)
: Emitter (E)
4.0
10 MIN.
1.4
0.5 ±0.1
7
9
8
* PW ≤ 300
** 4 Circuits, T
*** 4 Circuits, T
Document No. IC-3520
Date Published September 1994 P
Printed in Japan
µ
s, Duty Cycle ≤ 10 %
a = 25 ˚C
c = 25 ˚C
The information in this document is subject to change without notice.
©
1994
ELECTRICAL CHARACTERISTICS (Ta = 25 ˚C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Collector Leakage Current ICBO 10
Emitter Leakage Current IEBO 10
DC Current Gain hFE1
DC Current Gain hFE2
Collector Saturation Voltage VCE(sat)
Base Saturation Voltage VBE(sat)
*
800 1300 3200 — VCE = 5 V, IC = 1 A
*
500 1000 — VCE = 5 V, IC = 3 A
*
*
1.0 V IC = 3 A, IB = 30 mA
1.2 V IC = 3 A, IB = 30 mA
Turn On Time ton 1
Storage Time tstg 3
Fall Time tf 1.5
µ
A VCB = 100 V, IE = 0
µ
A VEB = 7 V, IC = 0
µ
s
IC = 3 A
µ
µ
IB1 = –IB2 = 30 mA
s
s
.
VCC = 50 V, RL = 16.7 Ω
.
See test circuit
* PW ≤ 350 µs, Duty Cycle ≤ 2 % / pulsed
SWITCHING TIME TEST CIRCUIT
.
R
L
= 16.7 Ω
.
µ
PA1454
.
.
V
IN
PW
.
PW = 50 s
µ
.
Duty Cycle ≤ 2 %
V
BB
1
B1
1
B2
.
= –5 V
.
C
I
T.U.T.
CC
V
.
= 50 V
.
Base Current
Wave Form
Collector
Current
Wave Form
I
B1
I
B2
90 %
I
C
10 %
tft
t
on
stg
2
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